substrate bias 中文意思是什麼
substrate bias
解釋
襯底偏置-
C ) we found that the negative bias or ion bombardment was important to the orientation variation of the films. low bias is helpful for the basal plane orientation, while under high bias the films shows that the c axis of bn was nearly parallel to the substrate
C ）偏壓或離子轟擊對取向有重要影響，低偏壓有利於形成基面對襯底平行的取向，而在高偏壓下，薄膜表現為c軸平行襯底的取向。 -
Experimental results show that the bistable of tuned substrate self - bias was determined by discharge gas pressure, discharge power and tuning circuit parameters etc. the bistable exists is because of there is capacitive coupling in icp system and sheath capacitance is nonlinear
實驗結果表明這種跳變回滯現象與等離子體的放電氣壓、射頻功率以及調諧外電路的參數等多種因素密切相聯系。而產生跳變回滯現象的原因是icp中存在容性耦合以及鞘層電容具有非線性特性。 -
Simox soi wafers produced by ion implant processes were used in this experiment. the results for simox soi samples we got here revealed that all the three structures are valuable for soi electrical characterization and sis structure has irrefragable advantage over the other two structures. the soi transistors have been the key devices for achieving the low voltage operation and low power consumption, because of the small junction capacitance, the small s - factor, and the small substrate bias effect
這三種模型分別是：第一，將傳統的mos電容結構應用到soi材料上來進行c - v ， i - v測試，分析計算soi材料的重要電學性能參數；第二種，針對soi材料的特殊結構，為了適應生產線上對無損soi園片進行電學性能測試的要求，應用mosos結構來對soi材料進行電學性能表徵。 -
In a ccp system, there is a discontiguous characteristic on tuned substrate self - bias. when the impedance between substrate and ground was made increasingly inductive, a large negative dc potential developed on the substrate
在ccp （ capacitivecouplingplasma ）中調諧基片偏壓具有不連續變化現象，當基片之間為漸增的感抗時，基片上會產生漸增的負偏壓。 -
1 successively depositing cbn thin films on si substrates which reaches international advanced level, the impact of negative substrate bias voltage and rf powers on the formation of cbn thin films were studied. boron nitride ( bn ) films were deposited on ( 100 ) - oriented p - type silicon substrate ( 8i sqcm ) with rf sputtering system. the target was hexagonal boron nitride ( hbn ) of 4n purity, and the working gas was the mixture of nitrogen and argon
研究了襯底負偏壓和射頻功率對制備立方氮化硼薄膜的影響立方氮化硼薄膜沉積在p型si （ 100 ） （ 8 15 cm ）襯底上，靶材為h - bn靶（純度達99 . 99 ） ，濺射氣體為氬氣和氮氣混合而成，制樣過程中，襯底加直流負偏壓。 -
The low insertion loss is achieved by optimizing the transistor widths and bias voltages, by minimizing the substrate resistances, and by dc biasing the transmit and receive nodes, which decreases the capacitances while increasing the p1db
通過優化mosfet的柵寬及偏置電壓可以降低插入損耗。在版圖設計中通過增加襯底接觸降低襯底電阻，從而減小插入損耗。另外，為接收和發送端提供直流偏置可以降低p1db 。 -
Base on two - stage approach, we adjust experimental parameter to develop a new method ( three - stage approach ) to prepare c - bn thin films. the study proves that it is favorable to prepare bn thin films of high cubic phase content. depositing time and substrate bias voltage in the first stage are 5 min and - 180v respectively
根據si片上bn薄膜的反射光譜r （ ）和熔融石英片上bn薄膜的反射光譜r （ ）和透射光譜t （ ）各自獨立的計算了bn薄膜的光學帶隙，利用兩種方法分別計算立方相含量均約為55 %的bn薄膜的禁帶寬度為5 . 38ev和5 . 4ev ，其結果均和由經驗公式計算得到的結果非常接近。 -
In the paper, the effect of ion bombarding on nucleation of diamond by negative substrate bias - enhanced was investigated in theory, and some experimental phenomena were explained
摘要從理論上研究了負襯底偏壓增強離子轟擊對金剛石核化的影響，並用理論解釋了一些實驗現象。 -
Process parameters included rf power, substrate negative bias voltage, substrate temperature and working gas pressure
工藝參數有射頻功率、襯底負偏壓、襯底溫度和工作氣壓等。 -
At 200v of substrate negative bias voltage and 300w of rf power, the content of cubic phase in bn films reaches 92. 8 %
當負偏壓為200v ，功率為300w時，薄膜中立方相的含量達到92 . 8 。 -
( 4 ) the study of the optical band gap of cnx film by uv - vis spectrophotometer. ( 5 ) by using the microhardness tester, we study the hardness of cnx film on the ceremic substrate by dc magnetron reactive sputtering with the feed ar and n2 flow rate, film thickness, substrate temperature and substrate bias
（ 5 ）用直流磁控反應濺射法，以陶瓷作為襯底，對在ar和n2不同流量、不同膜厚、不同基片溫度和對基片施加不同偏壓下沉積的薄膜，用< wp = 4 >顯微硬度計研究測試了不同工藝參數下的相應硬度。 -
Sic film was coated on the surface of 316l stainless steel by substrate bias - assisted radio frequency ( rf ) sputtering as tritium permeation barrier ( tpb ) of first wall and blanket in fusion reactor
採用分步偏壓輔助射頻（ rf ）濺射法在316l不銹鋼表面制備了sic薄膜。掃描電鏡（ sem ）觀察表明膜緻密、均勻、與基體結合牢固。 -
Cubic nitride boron ( c - bn ) films have been prepared at room temperature ( 25 ) by radio frequency plasma enhanced pulsed laser deposition ( rf - pepld ), assisted with substrate negative bias. in this paper, we primarily studied the effect of laser energy density, radio frequency power, substrate bias and depositing time on the growth of c - bn films, and analyzed the formation process and mechanism of c - bn films deposited by rf - pepld method at room temperature
本文採用偏壓輔助射頻等離子體增強脈沖激光沉積（ rf - pepld ）方法在常溫下（ 25 ）制備立方氮化硼（ c - bn ）薄膜，初步研究了薄膜沉積參數：激光能量密度、射頻功率、基底負偏壓和鍍膜時間對立方氮化硼薄膜生長的影響，並分析了常溫下用rf - pepld方法沉積立方氮化硼薄膜的形成過程和機理。 -
Structure and properties of ta - c films deposited by filtered cathodic vacuum arc technology as a function of substrate bias
襯底偏壓對四面體非晶碳膜結構和性能的影響 -
Moreover, high quality nanocrystalline p - sic film was attained with the integration of the pre - carbonization process and the substrate bias effect
進一步結合襯底預碳化以及對襯底的偏壓作用，得到了高質量的納米? sic薄膜。 -
In this paper, the nucleation process of diamond by filament cvd was analyzed, and enhanced flux of ions by negative substrate bias was investigated in theory
摘要木文對熱燈絲cvd沉積金剛石膜的核化過程進行了分析，從理論上研究了負襯底偏壓增強活性離子的流量。 -
The main process parameters include hydrogen content in the gas sources, hydrogen plasma catalyst pretreatment, substrate bias, deposition temperature and plasma flow guiding
主要之製程參數包括氣源中之氫氣含量、氫電漿前處理、基材偏壓、沉積溫度以及電漿導流板之施加。 -
The influence of various factors, such as substrate bias voltage and temperature, working gas pressure, types of si wafer, etc. on the preparation of cbn has been studied systematically
系統地研究了襯底偏壓、襯底溫度、工作氣壓、 si晶片的類型等多種因素對制備cbn薄膜的影響。 -
It also shows that hardness increases with the increase of film thickness, substrate temperature and substrate bias. and among these processing parameters, the substrate temperature and bias have the more prominent influences
同時，隨著膜厚的增加，基片溫度的提高以及對基片施加的偏壓的增高，薄膜的硬度都有不同程度的提高。 -
The solution to the problem of hydrogen contained in the film was initially proposed for pecvd technique. meanwhile, the adoption of substrate bias assisted deposition further eliminated the impurity o in the film
首次解決了採用pecvd法低溫制備? sic薄膜中的含氫問題；同時，採用偏壓輔助的技術，進一步解決了薄膜中的含氧問題。
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