substrate constant 中文意思是什麼
substrate constant
解釋
底物常數-
Usually, gaas is employed as substrate for the growth of wide band - gap ii - vi semiconductors due to their similarities in lattice constant. however, as a mature semiconductor material, si has serves electronics greatly
以往的寬帶-族半導體都是以gaas為襯底材料的，這就造成了寬帶-族半導體光電子材料與si基微電子技術的分離。 -
In structure, there is no need of using a substrate with high dielectric constant to reduce the filter size, and it is suitable to be buried into the substrate and thus easy to integrate with other sub - modules to form a single, miniaturized, multifunction module
結構上，不需要使用高介電常數的介質來降低濾波器尺寸，並且適于埋入介質層內與其他次模組整合成單一、微小化之多功能模組。 -
In the " card - packing ", a znf16pc molecule takes an angle of 52 respect to the substrate. while in the " brick - stacking ", the molecules arrange in a square lattice with lattice constant as 14. 94a and 14. 28a under room temperature and 300 respectively. from room temperature to about 150, f - ptcdi molecules follow the vollmer - weber rule when grown on quartz substrate, as revealed by afm images
在「 card - packing 」模式中，分子平面與石英襯底平面成52左右的二面角；在「 brick - stacking 」模式中，較低溫度下，分子以四方點陣平行排列，點陣常數為14 . 94 ；在300的襯底溫度下發生構象調整，點陣常數減小為14 . 28 ，分子採取更高密度的堆積方式。 -
At the condition of constant salt content ( total ion content ), if the water mass fraction in the substrate is lower than 50 %, its ec is determined by both the salinity and the moisture of the substrate
試驗結果表明：在保持基質鹽分（離子總量）水平不變的條件下，若基質質量含水率低於50 % ，則電導率值受基質內離子含量和基質水分的雙重影響。 -
We found that hydrogen content incorporated as monohydride maintains constant and hydrogen content incorporated as polyhydride gradually decreases with the increase of substrate temperature
我們發現，隨著襯底溫度升高，以單氫化合物結合的氫含量基本保持不變，而以多氫化合物結合的氫含量逐步減少。 -
In this work, the influences of fabrication process on microstructure, dielectric properties, ferroelectric properties and pyroelectric properties of plt films have been studied. plt films were prepared on the pt ( 111 ) / ti / sio2 / si ( 100 ) substrates by radio frequency magnetron sputtering method and then annealed by rapid thermal annealing process ( rta ) or conventional furnace annealing process ( cfa ). with the help of atom force microscopy ( afm ), x - ray diffraction ( xrd ) and some other apparatus, it was found that : lower substrate temperature ( ts ) was helpful for plt films to form better surface morphologies. with the increase of substrate temperature, the dielectric constant of plt films increased
Afm 、 xrd以及性能測試結果表明:較低的基片溫度有利於形成表面均勻緻密的薄膜，且薄膜的表面粗糙度均方根較小;隨著基片溫度的升高，經過快速退火的plt薄膜的介電常數逐漸增大;相比于傳統退火，快速退火縮短了退火時間，提高了薄膜的介電和鐵電性能;快速退火隨著保溫時間的延長，大部分鈣鈦礦結構的特徵峰的峰強增大，半高寬減小，峰形越來越尖銳，但當保溫時間為80s的時候， （ 100 ）和（ 110 ）峰的強度有所下降，因此保溫時間在60s較為適宜。 -
The study on the kinetics of the enzyme showed that the enzymatic reaction with lactic acetate as the substrate accorded with the michaelis - menten equation. it michaelis constant km was 5. 77, and the maximum velocity was 0. 45 u mol / l min
酶動力學研究表明：該酯酶在以乳酸乙酯為底物的酶促反應符合米氏方程，米氏常數為km ： 5 . 77 ，最大反應速度vmax為： 0 . 45 mol l ? min 。
分享友人