surface recombination 中文意思是什麼
surface recombination
解釋
表面復合- surface : n 1 表面；地面；水面；廣場，空地。2 外觀，外表，皮毛。3 【幾】面；切口；【航空】翼面。adj 表面的...
- recombination : 沖調；復水
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Research on surface and grain boundary passivation mechanism obtained effects of surface recombination on crystalline silicon solar cell performance and the theoretical expression of grain boundary recombination velocity. the limit ratio of short - circuit current increment for anti - reflection coating utilization on solar cells was obtained. the crystalline silicon solar cell spectral response, contact resistance and minority carrier lifetime measurement systems were established
鈍化機理研究獲得了表面復合對不同表面摻雜濃度晶體硅太陽電池性能的影響、表面和界面復合速度的理論表達式；研究得到了減反射膜對太陽電池短路電流增量比的極限；建立了太陽電池光譜響應、柵線電極接觸電阻和少子壽命等測試系統。 -
Key technologies and its mechanism for improving crystalline silicon solar cells in the scale manufacture have been researched in this thesis. after sioa surface passivation and forming gas treatment utilization in the scale manufacture, the surface recombination and series resistance of solar cells have been reduced while their open - circuit voltage, fill factor and efficiency improved
本論文研究了提高晶體硅太陽電池效率規模化生產工藝技術的主要環節和相關機理，將sio _ 2表面鈍化、 forminggas處理用於規模化生產，降低了太陽電池的表面復合速度和串聯電阻，提高了開路電壓、填充因子和轉換效率。 -
From the experiment results and the normalization results, the surface recombination velocities of silicon pn junction were obtained
通過測量結果和計算結果的歸一化比較，獲得了其表面復合速率。 -
Acquisition of low surface recombination velocity on surface of p - type si
單晶低表面復合速度的獲得 -
Surface recombination velocity
表面復合速度 -
Depending on the image method and point source approximation method, the physic model was established, and the formula of photo - current versus surface recombination velocity was obtained
導出了光電流與表面復合速率相應關系的計算公式，確定了可進行電量測量的實驗裝置。 -
The pc id has been used in order to analyse the influence of surface recombination on the performance of crystalline silicon solar cell. in different surface concentration, the relation of the surface recombination velocity and the performance ( voc, jsc, g ) of crystalline silicon solar cell is discussed
採用pc1d就表面復合對太陽電池性能的影響進行理論計算，探討了晶體硅太陽電池不同表面濃度條件下，表面復合速度與太陽電池開路電壓、短路電流以及轉換效率之間的關系。 -
The initial activity of pt / tio2 was higher than that of tio2 because it restrained the recombination of electron and hole with supported pt, however the regenerated ability of the pt / tio2 was lower than that of tio2. after the regeneration, the activity could come back to some 60 % of the original activity and the reaction activity declined rapidly. the reason might be that after regeneration on the surface of pt / tio2 the incomplete oxidation of h2s to produce s was enhanced
Pt tio _ 2催化劑的初活性比單一的tio _ 2催化劑的初活性高，這是因為擔載的貴金屬抑制了電子與空穴的復合，但其再生性能比tio _ 2差，再生后活性只能恢復到初活性的約60 ，且反應活性迅速降低，這可能由於在再生后的pt tio _ 2表面上， h _ 2s通過不完全氧化生成s ~ 0的反應增強所致。 -
Moreover, the sio2 / tio2 composite thin film showed the lowest pl intensity due to a decrease in the recombination rate of photo - generated electrons and holes under uv light irradiation, which further confirmed the film with the highest photocatalytic activity at 700 c. when the calcination temperature was higher than 700 c, the decrease in photocatalytic activity was due to the formation of rutile and the sintering and growth of tio2 crystallites resulting in the decrease of surface area
同時，此時sio _ 2 / tio _ 2復合薄膜的熒光光譜顯示最低的熒光強度，這表明此時薄膜中的光生電子和空穴的復合速率最低，因而更有利於物質的光催化降解。當熱處理溫度高於700時，武漢理工大學碩士學位論文薄膜的光催化活性下降，這是由於薄膜中晶相二氧化欽的燒結和成長導致樣品的表面積下降以及金紅石相的形成。
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