two-pl 中文意思是什麼
two-pl
解釋
兩戶合用電話線-
To sum up, two types of model have priority in explaining the origin and mechanism of visible pl in si - base light - emitting materials. but in view of the reported results, the properties of materials are badly influenced by preparation process
歸納起來，其發光機制以量子限制效應和發光中心兩種模型為主；但就報道的結果而言，材料的發光特性都嚴重地依賴于樣品的制備工藝過程，經不同的工藝過程制備的樣品，其發光特性差別甚大。 -
Polarized microscopy, sem - eds, xrf, uv - vis, pl, ftir, epr have been used in this study to investigate two chameleon diamonds and a synthetic diamond which show color - change effects
摘要對具有變色效應的兩顆變色龍金剛石與一顆鮮黃色合成金剛石進行了掃描電鏡能譜、 x射線熒光光譜、顯微紅外光譜、紫外可見吸收光譜、光致發光譜、電子順磁共振譜等測試研究，以探討引起金剛石變色的原因。 -
Then some cavity quantum electro - dynamic ( cqed ) effects are studied by experiment. the photoluminescence ( pl ) intensity enhancement at resonance wavelength and suppression at off - resonance wavelength, emission spectrum narrowing as well as emission intensity redistribution in space are observed in the microcavity device fabricated with distributed bragg reflector ( dbr ) and silver mirror as well as that done with two silver mirrors
分別在帶有dbr結構的平面微腔及全金屬鏡構成的平面微腔中觀察到了諧振模式處的輻射增強及非諧振模式處的輻射抑制，發射譜線窄化以及輻射強度空間分佈重組等腔量子電動力學現象。 -
They inhibits the growth of fungi ( filamentous fungi especially ) while are non - toxic to plant cells. the main results were as follows : 1. obtaining of spcema ( signal peptide modified cema ) spcema ( 187bp ) was amplified with two long complementary primers ( p2 and p3 ) and two primers ( pl and p4 ) containing restriction enzyme recognition site
帶信號肽cema基因的pcr合成以兩條部分重疊長鏈引物p _ 2和p _ 3延伸產物為模板， p _ 1和p _ 4為正、反引物進行pcr擴增，獲得了改造的抗菌肽基因spcema （ 187bp ） 。 -
According to the raman selection rule and the pl measurement, it is reasonable to evaluate the quality of galnp / algalnp mqw by analyzing the relative intensity ratio of a1p - lo / to. ( 4 ) a new modified random element isodisplacement ( mrei ) model is set up to calculate the dependence between the long - wavelength optical phonon frequencies and the composition of iii - v - type ab1 - xcx mixed crystals. the second neighbor force constants are still assumed to be a linear variation with the composition, but the two first neighbor force constants can be evaluated to be a negative exponent variation with the composition, using the overlapped repulsive potential of the ion crystal combination
通過實驗我們找到了在這些結構參數上生產gainp algainpmqw的較理想的結果； （ 3 ）首次用喇曼（ raman ）散射方法研究了常溫下的gainp algainp多量子阱結構，除了指認出喇曼光譜中各光學聲子模外，還結合樣品光致發光譜的測量結果，分析發現喇曼光譜中alp - lo to的相對強度比可以在一定程度上評定晶體gainp algainpmqw的生長質量； （ 4 ）在修正的隨機元素等位移? mrei模型的基礎上建立了一個新模型，計算了ab _ （ 1 - x ） c _ x型?族半導體混晶的長波長光學聲子模頻率的組分變化關系。 -
By the essential control of the initial stage of - material growth, the high - quality crystal films can be obtained. by using mocvd technology, studies of some kinds of methods such as hydrogen - terminated, nitridation, plasma - assisted, growth of two stages and sputtering buffer layers have been conducted. by measuring of xrd, pl, sem and tem, and analysis of spectra of xrd, raman scatting, oa, and pl at different temperatures, we observed that the crystal quality has been improved markedly
本文利用mocvd技術，採用各種對si襯底處理的方法，如氫終止法、氮化法、等離子體轟擊方法、兩步生長法、濺射緩沖層法等進行了試驗與研究，通過x射線衍射技術（ xrd ） 、光致發光技術（ pl ） 、掃描電子顯微術（ sem ） 、透射電子顯微術（ tem ）等檢測，並對其x射線衍射光譜、拉譜光譜、吸收光譜及不同溫度下的光致發光光譜分析，發現外延晶體的生長質量得到了明顯提高。 -
The synthesized gan nano structures by the two steps growth pattern are hexagonal single crystal gan. the photoluminescence ( pl ) properties of the formed one - dimensional gan nano structures gained at room temperature revealed nicer results
用兩步生長模式合成的一維gan納米結構為高質量的六方單晶gan ，在室溫下測得了良好的光致發光ol ）特性。 -
Besides two pl bands located at 250 - 400nm and 650 - 700nm, two groups of distinguishable pl peaks were observed for the first time in the a - sioxny thin films, which centered at about 370nm and 730nm, respectively
在a - sioxny薄膜中，觀察到了250 - 400nm和650 - 700nm兩個熒光帶，並首次發現中心位於370nm和730nm的兩組分立熒光峰。 -
The intensity of distinguishable pl peaks increased with the increasing n content in the films, and the central positions of the above two pl bands were influenced by both the content of o and n. it is suggested that these pl were originated from luminescence centers related to si - o and 0 - si - n defects
分立峰強度隨薄膜中的氮含量增加而升高，熒光帶中心位置受到氧、氮含量的影響，分析表明其熒光起源於si - o和n - si - o等復合缺陷組態能級間的輻射躍遷。 -
In the fourth chapter the pl and ftir spectra of porous silicon as - prepared and stored in atmosphere for one month were measured. the formers " pl only had single peak with lower energy while the latter appeared double peaks with a higher energy. through comparing the ftir spectra of the two samples we found si - o - si and o - si - h bonds appeared in the ftir spectra of the latter sample
新制備的多孔硅樣品只有能量比較小的熒光單峰，存放一段時間后的多孔硅樣品則出現了雙峰;在紅外光譜中原來存在的si一h : 、 si一h 、強度逐漸變弱，出現了對應于si一o一si 、 o一si一h的新峰。 -
The zno particles are excited by ultraviolet ( uv ) exciting light ( 365 nm ), showing two photoluminescence ( pl ) peaks / bands, centered at 2. 90 ev ( blue ) and 2. 23 ~ 2. 41 ev ( yellow - green ), respectively. the intensity of the yellow - green band was reduced after the product had been annealed in n2 and o2 at 350 c for 1h. ultraviolet visible absorption spectrum shows that the zno absorbs ultraviolet light intensely
對于復合h ps zno結構的發光機制，認為是納米h價帶中的電子在紫外光的激發下，躍遷到zno的導帶，從而處于激發態，由於多孔硅的導帶比氧化鋅的導帶低， zno導帶中處于激發態的電子很快躍竄到多孔硅的導帶，然後再與h價帶中的空穴發生復合，發出可見光。 -
Four of the six resulting recombinants contained two genes arog and qutb, the other contained three genes arog, qutb and arob. the catalytic activities of both ds and qdhase increased diffierently, but enzyme activities of the recombinant harboring pbv - prpl - qutb - pl - arog were best
六種重組子都實現了目的蛋白的表達，表達產物ds和qdhase酶活性有不同程度的提高，其中pbv - prpl - qutb - pl - arog串聯表達重組子表達產物二種酶活性ds和odhase都比較高，是優化的重組子。 -
By comparable investigation, two luminescence mechanisms can explain the different variety of pl intensity of origin and annealed samples and are dominant mechanisms separately in unanneal and anneal course
經過退火處理后，在相同波長的光激發下發光強度逐漸增強，峰型逐漸變好，發光譜帶的半峰寬也變窄。 -
In the films prepared by rf - sputtering, two new green pl bands, which strengthened with the increase of n content in the thin film, were observed except those pl bands corresponding to the result of pecvd. moreover, the intensity of every pl band is strongly affected by the ts
在濺射法制備的薄膜中，除汕頭大學碩士學位論文相應的熒光發射帶外，在綠光部分出現了兩個較強的新帶，其強度隨薄膜氮含量增加而升高，而且各帶的熒光強度嚴重地受沉積時基片溫度的影響。
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