ultra-high vacuum (uhv) 中文意思是什麼
ultra-high vacuum (uhv)
解釋
超高真空-
A ) si thin film with sub - micro thickness was epitaxial grown on heavy - doped si substrate by ultra high vacuum chemical vapor deposition ( uhv - cvd )
A )利用超高真空化學氣相沉積( uhv - cvd )技術在重摻si襯底上生長高晶體質量的亞微米級薄硅外延片。 -
In succession, tini thin film is deposited on single - crystal silicon substrate using optimized parameters utilizing sputtering, and its transformation temperature ( a * ) is 72 ? indicated by dsc curve after being annealed in an ultra - high vacuum ( uhv ) chamber. in addition, the composition of the silicon - based tini film was analyzed by an energy dispersive x - ray spectroscopy ( eds ), and the ti content in the film is approximately 51at %
按照改進的工藝參數,在單晶硅襯底上濺射-淀積了tini薄膜,並進行了超高真空退火, dsc法測得其馬氏體逆相變峰值溫度為72 ,利用能譜分析( eds )技術測得其ti含量約為51at ,通過對非晶tini薄膜與單晶硅襯底之間的界面進行eds及x射線衍射( xrd )分析,發現在用大功率( 2000w )直流磁控濺射法制備tini薄膜過程中,存在ti 、 ni與si的雙向擴散,發生了界面反應,並有三元化合物ni _ 3ti _ 2si生成。
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