ultraviolet lithography 中文意思是什麼

ultraviolet lithography 解釋
紫外線光刻
  • ultraviolet : adj. 【物理學】紫外的;紫外線的;產生[應用]紫外線的。n. 紫外線輻射。
  • lithography : n. 石印〈平版印刷〉術;平版印刷品。
  1. The laser - liga technology provided by this research is the first technology to use ultraviolet laser as the exposal source for su - 8 photoresist lithography. it is a technology with lower cost and big potential to increase the aspect ratio as well as wider application

    本文首次提出採用紫外激光作為曝光光源的laser - liga技術,對su - 8膠進行曝光光刻不僅成本低、易推廣,而且具有大幅度提高光刻深寬比的潛力。
  2. Euv extreme ultraviolet lithography

    極端紫外平版印刷
  3. Some of the techniques ( for example, advanced ultraviolet lithography for chip production ) will probably become commercial realities

    某些技術,例如拿來生產晶片的高階紫外光蝕刻法,很可能會受到業者廣泛使用。
  4. Extreme ultraviolet lithography is being developed as one of the most important candidates to fabricate a sub - o. lum - pattern. in recent years, several key technologies have been developed rapidly such as laser producing plasma source, extreme ultraviolet multilayer, optical fabrication and metrology, projection - camara alignment, low - defect mask and control technology of stage

    極紫外投影光刻( extremeultravioletlithography簡稱euvl )最有可能成為下一世紀生產線寬小於0 . 1 m集成電路的技術,近年來在激光等離子體光源、極紫外多層膜、光學加工和檢測、光學精密裝調、低缺陷掩模、光刻膠技術以及高穩定工作臺系統控制等關鍵技術方面得到了飛速發展。
  5. Silicon grating is a period construction fabricated on the silicon wafer by micro fabrication techniques as ultraviolet lithography and anisotropic etching

    硅光柵是利用紫外光刻、各向異性腐蝕等硅微加工技術在矽片上製作的周期結構。
  6. Extreme ultraviolet lithography ( euvl ) represents one of the promising technologies for supporting integrated circuit ( 1c ) industry ' s lithography needs during the first decade of the 21st century. this technology builds on conventional optical lithography experience and infrastructure, uses 11 - to 14 - nm photon illumination, and is expected to support multiple technology generation from 65 nm to 35 nm

    極紫外投影光刻( euvl , extremeultravioletlithography )技術作為下一代光刻技術中最佳候選技術,建立於可見/紫外光學光刻的諸多關鍵單元技術基礎之上,工作波長為11 14nm ,適用於製造特徵尺寸為65 35nm的數代超大規模集成電路,預計在2006年將成為主流光刻技術。
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