vgs 中文意思是什麼
vgs
解釋
引擎網格系統-
The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward
介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本徵參數、寄生參數對頻率特性的影響，提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用於雙極晶體管電路的跨導線性原理，提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。 -
In gan hemt gate pulse experiments, drain current under pulse conditon collapsed about 47 % than direct current condition and the pulse width affected little on current collapse. the relationship between drain current and pulse frequency is ncoxw [ m + ( n + k ? ) vgs + ( n + k ? ) vgs2 ] ( vgs - vth ) 2 / l
在ganhemt柵極脈沖電流崩塌測試中，觀察到柵脈沖條件下漏極電流比直流情況下減小了47 % ;隨著信號頻率的改變，漏極電流按ncoxw [ m + （ n + k -
The results show that for all of parameters considered in this study, the friction factor of fin surface without vgs is smaller than that for fin surface with vgs ; the increase of friction factor under low reynolds number is large, but with reynolds number increasing, the increase of friction factor is quite small
實驗結果表明：在不同管間距、板間距時，板芯裝渦產生器阻力系數均比光板板芯的阻力系數大，並且在低雷諾數時的增幅比較大，隨著雷諾數的提高，阻力系數逐漸降低並趨于平緩，且阻力系數增幅大大減少。 -
This model described relationship of current collapse and traps in buffer layer, and the normalized product of electron mobility and 2deg density with and without current collapses was 0. 95 vgs
該模型描述了電流崩塌效應與緩沖層中陷阱的相互關系，並獲得了電流崩塌前後遷移率與二維電子氣濃度乘積的歸一化值0 . 95 vgs 。
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