voltage amplification 中文意思是什麼

voltage amplification 解釋
電壓放大率
  • voltage : n. 【電學】電壓，電壓量，伏特數。 the working voltage （電氣的）耐壓限度。
  • amplification : n. 1. 擴大；擴充。2. 【電學】增幅，放大（率）。3. （聲明等的）補充材料。
  1. Power for the thermal cycler shall be provided with a manostat or a ups to avoid the influence on pcr amplification arose by fluctuation of voltage

    熱循環儀的電源應專用，並配備一個穩壓電源或ups ，以防止由於電壓的波動對擴增測定的影響。
  2. Elect hardware, and design current to voltage translation circuit, voltage amplification circuit and acoustic - optic alarming circuit

    對硬體進行了選擇，對電流/電壓轉換電路?電壓放大電路和聲光報警電路進行了具體設計
  3. In the experimental system apd transferred laser pulse to weak electrical current. after two - level amplification we got a voltage pulse that had a enough amplitude to be applied, the timing point was discriminated by the constant - fraction timing discriminator circuit. timing circuits transferred the pulse flight time to digital signal accurately

    實驗系統採用apd作為光電傳感器，將激光脈沖信號轉變為微弱電流脈沖，經過兩級放大后，信號變為幅度較大的電壓脈沖，經過時點鑒別電路分別確定計時起點和終點后，由計時電路來精確測量兩個時間點之間的時間間隔。
  4. At the initial stage of planar technique, b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region, and the good shield effect of sio2 film to b. but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly - changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high - reversal - voltage devics. thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed, while the former can lead to relatively large the base - region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr ; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency

    在平面工藝初期，由於b在硅中的固溶度、擴散系數與n型發射區的磷相匹配， sio _ 2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大（ 1000時達到5 10 ~ （ 20 ） ，擴散系數小， b在硅中的雜質分佈不易形成pn結中雜質的線性緩變分佈，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁塗層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t _ f值較高，熱穩定性差；後者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。
  5. Then, the optical system and mechnical configuration of the interferometer are realized, which are based on phase detection algorithms and four - step algorithm. in the following work, we designed and realized a dc high voltage amplification circuit by mcu, which is used to driver pzt, and presented a new method to measure the nonlinearity of pzt

    設計並完成了精密移相的單片機控制用於壓電晶體驅動的高壓放大電路，並且提出了一種新穎的對工作狀態下壓電晶體非線性軟體校正的新方法，並得到了很好的實驗結果。
  6. When this feedback current arrives, it increases the voltage further, which in turn recruits more feedback current and causes additional amplification

    返回的回饋電流會讓電壓升得更高，因此又會使回饋電流變得更大，造成更大的放大作用。
  7. Linear voltage amplification

    線性電壓放大率
  8. Voltage amplification factor

    電壓放大系數
  9. Common - mode voltage amplification

    共態電壓放大
  10. Available voltage amplification

    有效電壓增益
  11. 2. one voltage controlling manner is presented. this manner combines amplification and attenuation, and fine control and coarse control can be operated separately, it can adjust the amplitude by 1mv step in the range of 50mv to 10vpp conveniently

    2 .提出一種放大與衰減相結合，精細控制和粗略控制分別進行的電壓控制方式，可以方便地實現信號幅度在50mv ? 10vpp之間以1mv的步進改變。
  12. The fuctions of impedance matching, over voltage protection, ac / dc coupling and amplification / attenuation in the analog circuit are designed to enhance the reliability and testing precision of the module

    設計了具有阻抗匹配、過電壓保護、 ac / dc耦合、放大/衰減功能的前端信號處理電路，提高了模塊的可靠性和總體測試精度。
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