voltage blocking 中文意思是什麼
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During the research of the novel high - voltage soi lateral structure, we established its blocking theory based on poisson equation, which classifies its blocking mechanism by describing the potential distribution in the drift region very well when the device is in the blocking state
在新型橫向高壓器件結構tsoi的研究中，本文通過二維泊松方程建立其解析理論，正確描述了漂移區中電場的分佈，並闡明其耐壓機理。 -
Charge qs was located near the interface of silicon and oxide. with more charge, the field of buried oxide was improved up to the critical breakdown field basis on entirely continuity of electric displacement vector, and then the vertical breakdown voltage was raised. the comparisons between analytical and simulative results proved its availability of this model to interpret the vertical blocking mechanism
該模型認為，將界面電荷qs引入i層si / sio2的si界面，根據電位移矢量的全連續性，界面電荷qs越多，使i層內電場增加，直至sio2的臨界電場，從而提高縱向擊穿電壓vb . v ，很好得解決了器件的縱向耐壓問題。 -
Main functions : 3 - stage complex - voltage blocked overcurrent protection, 3 - stage zero - sequence overcurrent protection, clearance discharging zero - sequence overcurrent protection, zero - sequence overvoltage protection, overvoltage alarming, overload alarming, fan start stop, tap changer blocking, pt wire broken blocking and alarming, etc
其保護配置：復合電壓閉鎖過流段保護，零序過流段保護，間隙放電零序過流保護，零序過壓保護。 -
Finally the high voltage thyristor vale was tested in lab. the results illuminate the good insulation structure, reliable triggering and blocking, good voltage division on each thyristor, and that the bod protecting circuit acts rapidly. in a word the high voltage thyristor vale satisfies the expected specification in the application of auto - passing over neutral section of traction power supply system
最後論文對高壓晶閘管閥在實驗室進行的各種試驗進行了分析總結，試驗結果表明，該高壓晶閘管閥絕緣結構合理，觸發和關斷可靠，元件在各種工況下的均壓一致性良好，過壓保護電路動作迅速，達到了在牽引供電網自動過分相裝置應用中的技術要求。 -
We have done the following work in this paper : 1. proposal of a novel high - voltage soi lateral structure ( tsoi ), and establishment of its blocking theory ; 2. proposal of devices based on epitaxial simox soi ( esoi ) substrate ; 3
本文主要進行了三個方面的工作： 1 、提出了降場電極u形漂移區的橫向高壓器件結構tsoi （ trenchsoi ） ，並建立了該結構的解析理論[ 1 ] ； 2 、提出基於simox外延襯底esoi （ epitaxialsimoxsoi ）的器件結構； 3 、設計了基於simox處延襯底結構的功率開關集成電路。 -
This family s characteristics include a maximum blocking voltage of 600v, maximum current handling capability of 140ma and low on - resistance of 22 ohms. these 4 - pin devices are offered in both dip and surface mount packages
福華先進微電子是以soc實體ic與平臺方式開發產品之應用及方案，同時提供平臺式的設計方法，支援客制化的晶片實現服務。 -
In addition, because of blocking design, it is easier to raise output voltage, trouble shooting and maintains
另外，採用模塊化設計，易於提高電壓、處理故障，維護也比較簡單。 -
The forward voltage drop in the on - state is only a few volts ( typically 1 to 3 v depending on the device blocking voltage rating )
在導通狀態的正向壓降很小（取決于阻斷電壓的值，一般為1 ~ 3伏） 。 -
In view of the very small leakage currents in the blocking state ( reverse bias ) and the small voltage in the conducting state ( forward bias ) as compared to the operating voltage and currents of the circuit in which the diode is used, the i - v characteristics for the diode can be idealized
與二極體的工作電流和電壓相比，在阻斷（截止）狀態下漏電流很小，在導通狀態下電壓比較小，因此二極體的電流-電壓（伏安）特性可以理想化。
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