voltage coefficient 中文意思是什麼

voltage coefficient 解釋
電壓系數
  • voltage : n. 【電學】電壓，電壓量，伏特數。 the working voltage （電氣的）耐壓限度。
  • coefficient : adj. 共同作用的。n. 1. 共同作用；協同因素。2. 【數，物】系數，率；程度。
  1. Temperature coefficient of breakdown voltage

    擊穿電壓溫度系數
  2. Brings forward the basic network cell model of symmetrical blast vault and asymmetric blast vault. then studies and analyses airflow in vault of main voltage switchyard hall of xiluodu hydropower station which is far cry and large numbers of airflow conflux, brings forward concept of “ virtual embranchment ” and corresponding basic network cell model, regresses calculate expressions of flux uniformity coefficient and impedance of “ virtual embranchment ” of vault of main voltage switchyard hall of xiluodu hydropower station

    而後又採用cfd數值模擬的方法對溪洛渡水電站主變洞排風拱頂這種多股氣流匯流的長距離通道內的氣流流動進行了分析，提出了「虛擬分支」的概念和相應的網路基元模型，並回歸得到了溪洛渡水電站主變洞排風拱頂各個排風「虛擬分支」風量均勻系數以及阻抗的計算公式。
  3. Three parameters, the fractional temperature coefficient, the sensitivity of transconductance to voltage supply and improvement factor, are introduced

    在分析中，本論文引入並使用了跨導的相對溫度系數、跨導對電源電壓的敏感度、跨導穩定性改善因子三項指標。
  4. The voltage of lithium - intercalation reaction, impedance and structural stability of intercalation - type cathode material were analysed and calculated. theoritical results show that the reaction voltage depends on the content of lithium and the bond energy, and that the key ways to lower the electrode impedance are to increase the electronic conductivity of the electrode and the diffusion coefficient of lithium ion in the host and to decrease the size of powder. in addition, the thermal stability of lithium - insertion structure can be improved by using crystallographic co - lattice theory and doping treatment

    本文從嵌入式陰極材料的嵌鋰反應的電壓、阻抗及結構穩定性的分析和理論計算著手，得到了電壓取決于基體中各種離子間的鍵能及鋰含量、降低電極阻抗的關鍵是提高電子型導電性和li ~ +在基體中的擴散系數及減小粉末粒度的理論依據及其利用晶體的共格原理和摻雜改性的方式來提高材料嵌鋰結構的熱穩定性的設計思路。
  5. Temperature coefficient measuring methods of output voltage and output current for crystalline solar cells and modules

    晶狀太陽能電池和模塊的輸出電壓和輸出電流溫度系數的測量方法
  6. Coefficient of voltage detection

    電壓檢波系數
  7. A novel parallel - serial type cttfc ( combined two - transistor forward converter ) with coupled inductor is present in this paper, and the performance of three parallel - serial type cttfcs is studied and compared. the performance of cttfc with coupled inductor is similar to the other two cttfcs while coupling coefficient is less than one and the converter working ccm ( continuous current mode ), and input - to - output voltage gain increase one times while coupling coefficient is one

    本文提出了一種耦合電感並?串型雙管正激組合變換器，並對三種並?串型組合變換器的特性作了比較：耦合系數小於1且耦合線圈電流連續時，三種並?串型組合變換器特性相類似：耦合系數為1時，組合變換器輸入輸出電壓增益增大一倍。
  8. At the initial stage of planar technique, b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region, and the good shield effect of sio2 film to b. but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly - changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high - reversal - voltage devics. thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed, while the former can lead to relatively large the base - region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr ; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency

    在平面工藝初期，由於b在硅中的固溶度、擴散系數與n型發射區的磷相匹配， sio _ 2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大（ 1000時達到5 10 ~ （ 20 ） ，擴散系數小， b在硅中的雜質分佈不易形成pn結中雜質的線性緩變分佈，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁塗層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t _ f值較高，熱穩定性差；後者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。
  9. This paper put forward a method of using amending sine value in the spwm sine table. this method can correct the distortion of the output voltage waveform, which resulted from the dead time used to the voltage type whole bridge main circuit. the inverter system adopts digital fuzzy controller with feed forward correction and which proportion coefficient and integral coefficient is changeable, so dynamic response is improved

    本文提出了一種採用修補spwm正弦表值的方法，用以改善電壓型全橋逆變主電路因上下橋的功率器件切換時先關斷后導通的死區時間而引起的輸出電壓波形畸變；逆變系統採用帶前饋校正的變比例變積分系數的模糊控制器，提高了系統的動態響應指標；系統設計了完善的保護措施，並具有市電電網的故障診斷功能。
  10. While working in offline ( no pc ) mode, additionally to normal transducer, it has soft - startup function and fast - stop function. and the input of frequency and voltage - coefficient is optional. while working in online mode, additionally to working in offline mode, it can process, display, save and load waveform, which is specialty of computer

    脫機工作（無pc ）時，它除具有一般變頻器功能外，還具有軟啟動功能、頻率和電壓輸入源可選、急停功能等；在聯機工作時，除具有脫機工作的全部功能外，還具有計算機特有的圖形處理、顯示、存取能力，包括瞬態波形、各種參數動態過程曲線等。
  11. Based on the investigation with several voltage control methods, such as venturini method, instantaneous double - voltage synthesis method and space vector modulation method ( svm ), three new control strategies are put forward. firstly, a time - varying modulation coefficient svm method is proposed to improve mc ' s anti - disturbance performance under the asymmetry input voltage. secondly, a 5 - state switching strategy is presented for mc controlled by the svm method, which reduces the commutation number and switching losses remarkably

    在分析了venturini控製法、瞬時雙電壓法、空間矢量法等電壓控制方法的基礎上，提出了在非對稱輸入條件下矩陣變換器空間矢量法的時變調制比改進控制策略，提高了變換器的抗干擾性能；對空間矢量法的開關策略進行了研究，提出了新型5狀態開關策略，在保證其他性能不受影響的條件下，減少了變換器的換流次數和開關損耗；提出了一種矩陣變換器單電壓合成的新方法，它不僅使得變換器的控制簡單，計算量減少，而且使得開關損耗達到最少。
  12. According to negative temperature coefficient of vbe and positive temperature coefficient of vt, a framework of band - gap voltage reference is investigated. the reference offer a source of pir, distributed three voltage, one as upper - threshold voltage of dual - threshold comparator, the other as lower - threshold voltage of comparator, the other as direct current voltage for second band - pass filter amplifier

    同時利用pnp晶體管發射結電壓的負溫度特性和發射結差值電壓的正溫度特性設計了一個帶隙基準電壓源。此帶隙基準電壓源本身作為熱釋電紅外傳感器的電源電壓，同時分壓提供雙限電壓比較器的上限電平和下限電平以及第二級帶通濾波放大器的直流電平。
  13. The endurance function of the insulation field is widely concerned in the power system. according to the equality between the two dimensional weibull distribution and the law of electrical aging, after the method for estimation of the voltage endurance coefficient is presented by the maximum likelihood estimation and the minimum square estimation of the two dimensional weibull distribution parameters, on the basis of the analysis of the test disadvantages under invariable voltage, the method of obtaining the voltage endurance coefficient under the intension increased by degrees is considered

    電氣絕緣電老化性能是電力系統普遍關注的問題，由於二元weibull分佈與電老化定律在評價絕緣老化特性上存在等價性，本文首先介紹了二元weibull分佈參數採用極大似然法和最小二乘法估計獲得電壓壽命指數的方法，同時在分析其在恆定電壓下試驗容易出現，由於電壓選擇不當導致試驗時間過長現象的基礎上，討論了利用場強遞增方式確定電壓壽命指數的方法。
  14. The effect of nociceptin on membrane current of sg neurons in the adult rat spinal dorsal horn under voltage clamp superfusion of nociceptin could induce an outward current on sg neurons of spinal dorsal hom at a holding potential of - 70 mv ; this action was dose - dependent with an ec $ o value of 0. 23 ^ m and hill coefficient of 1. 5

    Nociceptin在電壓鉗制下對成年大鼠脊髓背角sg神經元膜電流的影響在鉗制電壓為刁0mv的情況下，灌流給子nociceptin可以誘致脊髓背角sg神經元產生一外向電流並且呈濃度依賴性，它的ecs 。值為0二3卜m ， hill系數為l 5 。
  15. The change of transformer ’ s output voltage with coupling coefficient is analyzed. the calculated formulas for parameters of air - core and part - magnetic - core pulse transformer are deduced based on electromagnetic theory. comparing with past formulas for calculated the parameters of the transformer, this formulas is more accurate to reckon the parameters of transformer

    首先從理論上分析了提高耦合系數對變壓器輸出電壓的影響，推導了高功率帶繞式空芯和部分磁芯脈沖變壓器的電感及耦合系數的計算公式，並與已有的方法進行比較，經實驗驗證，本文推導的方法能夠較準確地計算帶繞式空芯脈沖變壓器的參數。
  16. We deduced a expressions for threshold voltage temperature coefficient of short channel most. and found that the coefficient is almost unchanged in a quite wide temperature range which is higher than the room temperature, but it increased sharply at high temperature

    推導了了一個短溝道most閾值電壓溫度系數表達式；發現短溝道most閾值電壓溫度系數在高於室溫的一個較寬的溫區內近似不變，但在溫度較高時迅速增大。
  17. Nanosized lead titanate ( pt ) and lead titanate doped with calcium and lanthanum ( pclt ) powder obtained by the sol - gel method was added into vinylidene fluoride - trifluoroemylene [ p ( vdf - trfe ) ] to form nanocomposite to be used as the sensing film of the pyroelectric detector. the experiment results show that after mixing in 0. 16 volume fraction of pclt powder, the pyroelectric coefficient of pttp ( vdf - trfe ) composite film was about 37 % higher than that of the pure p ( vdf - trfe ) film prepared under the same condition, and the voltage figure - of - merit of pt / p ( vdf - trfe ) composite film was about 22. 4 % higher

    用溶膠-凝膠法制備了鈦酸鉛（ pt ）和摻鈣鈦酸鑭鉛（ pclt ）納米粉粒，與聚偏氟乙烯-三氟乙烯（ p （ vdf - trfe ）均勻復合，由於16的摻鈣鈦酸鑭鉛納米陶瓷粉粒的摻入，使得pclt / p （ vdf - trfe ）復合膜的熱釋電系數值提高了約37 ，探測優值提高了約22 . 4 。
  18. It ' s one of important component of rectifier of electrical locomotive, requires high heat conductivity coefficient, strength and electric breakdown voltage

    氮化鋁陶瓷絕緣散熱片是新型「交?直?交」電力機車整流器的重要部件之一。
  19. The traditional bandgap reference circuit was improved in the design, which includes the applying of self - bias structure and cascode structure, output of the opamp was used as self - bias voltage, saving bias circuit, and then it was helpful to get low power consumption. through using poly resistance of high value with low temperature coefficient, we reduced the influnce to circuit, if power supply did not change, we must decrease operating current to decrease power consumption, and increasing value of resistor could decrease the operating current efficiently. poly resistance of high value had large value of squared resistor, so we could save layout area

    對傳統帶隙基準電路進行了改進設計，採用自偏置結構和鏡像電流鏡結構，利用運放的輸出電壓作為運放的偏置電壓，節省了偏置電路，降低了功耗;使用低溫度系數的多晶硅高值電阻，降低了電阻溫漂對電路的影響;在電源電壓不變的情況下，為了減小功耗就必須減小工作電流，而增大電阻的阻值能有效地減小工作電流，多晶硅高值電阻的方塊電阻很大，可以節省版圖面積。
  20. Directly heated voltage - stabilizing type negative temperature coefficient thermistors

    直熱式穩壓型負溫度系數熱敏電阻器
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