voltage influence 中文意思是什麼

voltage influence 解釋
電壓影響
  • voltage : n. 【電學】電壓，電壓量，伏特數。 the working voltage （電氣的）耐壓限度。
  • influence : n 1 影響，感化 （on; upon）。2 勢力，權勢。3 有影響的人物[事物]，有權勢的人。4 感應。vt 1 影響。2...
  1. Voltage reference is a vital basic module which is widely adopted in analog circuits ( mixed signal circuits ). its temperature stability and antinoise capability influence the precision and performance of the whole system

    電壓基準源是模擬電路（混合信號電路）設計中廣泛採用的一個關鍵的基本模塊，它的溫度穩定性以及抗噪性能影響著整個電路系統的精度和性能。
  2. First, a simple discussion for the mechanism about electrostatic atomization of the liquids has been given ; then the paper theoretically analyzed waving course, liquid drop producing course, and the liquid drop diffusing course in electrostatics atomization process., gave an analysis about the methods about carrying charges to the liquid drop, and analyzed that liquid with high electrical conductivity can be carried charges and atomized by electric field, while the isolated liquid with low electrical conductivity can be charged fully with the soakage electrode and inducing charge methods. at last the paper designed and configured the experimental equipment, conducted the atomization experiment to the three liquid medium - kerosene, emulsifier and alcohol under the same environment, handled the experimental results, then summarized the relationship between liquid electrostatic atomization effect and liquid surface tension, electronic conductivity and viscosity, along with the influence of voltage to electrostatic atomization and so on, found out the liquid atomization rule in high voltage electrostatic field

    首先，對液體介質的靜電霧化機理作了初步的探討，理論上分析了液體霧化過程中射流區、波紋區、霧滴區和霧滴擴散區;然後對液體荷電方法進行了研究分析，對于高電導率的液體，場致荷電和接觸荷電可以使其霧化，而對于電導率較低的絕緣液體，需用浸潤電極荷電和感應荷電方法使其充分帶電;最後，根據前面的研究分析，設計和組裝試驗裝置，在同一環境下對煤油、乳化劑、酒精三種不同液體介質進行高壓靜電霧化試驗，並對試驗結果進行分析處理，總結出液體靜電霧化與液體表面張力、電導率和粘度的關系及電壓對液體靜電霧化的影響等，得出高壓靜電場中液體霧化的一般規律。
  3. Power for the thermal cycler shall be provided with a manostat or a ups to avoid the influence on pcr amplification arose by fluctuation of voltage

    熱循環儀的電源應專用，並配備一個穩壓電源或ups ，以防止由於電壓的波動對擴增測定的影響。
  4. The influence of the parameters such as d and d ( illm thickness ) on laser induced voltage had been discussed

    根據該公式，對影響激光感生電壓的一些參量如、 d 、薄膜的厚度d等進行了討論。
  5. Influence of high voltage static electric field for super - weak luminesce of crops seed

    高壓靜電場對作物種子超弱發光的影響
  6. Influence of driving voltage frequency on sm - pdp

    驅動電壓頻率對蔭罩式等離子顯示屏的影響
  7. This papers mainly study the influence of variable speed drive to the electric submergible pump system, for instance, long motor leads effect and common - mode voltage

    本文主要是分析了變頻器對潛油電泵系統的影響，特別是長線傳輸問題及共模電壓問題。
  8. Using the particle - in - cell ( pic ) model, a 8 millimeter relativistic backward wave oscillator underlying superradiance mechanism was gotten, the influence on both operation frequency and radiation efficiency of the guiding magnetic field, the diode voltage, the beam current and the beam radius as well as the corrugation structure were also presented

    採用pic方法，通過數值模擬優化設計了超輻射狀態下的8毫米相對論返波振蕩器，分析了引導磁場、二極體電壓、電子束流、電子束半徑、周期慢波結構等對器件的輻射功率及輻射效率的影響。
  9. Only when it takes humidity ratio h / ? as independent variable instead of absolute humidity h in researching and calculating the influence degree of the humidity on the discharge voltage, the emendation coefficients of relative air density and humidity can be independence, and can reflect the influence degree of atmospheric parameters on outer insulation discharge voltage actually

    當以比濕h代替絕對濕度h為自變量研究和計算濕度對放電電壓的影響程度時，相對空氣密度校正系數和濕度校正系數才能相互獨立，才能真實地反映大氣參數對電氣設備外絕緣放電電壓的影響程度。
  10. The influence of burning system on the properties and structure of the ceramic capacitors has been studied under the certain temperature system, the optimum sintering temperature of the ceramics was primarily decided by the content of bi2o3 ? 3tio2. the sintering temperature dropped with the adding of bi2o3 ? 3tio2. at the range of suitable sintering temperature, slow heating and low temperature sintering can obtain fine grain and dense structure. it results in the improving of the breakdown voltage for the middle - high voltage ceramic capacitors

    研究了燒成工藝制度對電容器陶瓷性能和結構的影響，結果表明：在一定的升溫保溫時間下，瓷料的最佳燒結溫度主要取決于組成中bi _ 2o _ 3 ? 3tio _ 2的含量， bi _ 2o _ 3 ? 3tio _ 2含量的增加將降低燒結溫度；在合理的燒結溫度范圍內，慢速升溫和低溫燒結將有利於得到細晶緻密結構，從而改善中高壓陶瓷電容器的耐壓強度。
  11. Based on sndm technique, a method of local capacitance - voltage characteristic characterization of ferroelectric thin films was proposed. the effect of traps at oxide - semiconductor interface on metal - oxide - semiconductor structure capacitance - voltage curve was discussed, and the influence of coercive field to the capacitance - voltage characteristics of ferroelectric thin films was also discussed. the dynamic switching of ferroelectric domain in ca doping ( pb, la ) tio3 thin film was studied by sndm from the view of electricity

    利用sndm ，從純電學的角度觀察了plct薄膜中的電疇動態反轉過程，由電疇橫向擴張的移動速度的降低，發現了晶界在電疇反轉過程中對疇壁移動的阻擋作用;根據sndm和pfm的在垂直方向上的不同信息敏感深度，得到plct薄膜中電疇反轉過程中電疇是楔形疇;用pfm觀察同一電疇在去掉外加反轉電場后電疇的極化弛豫現象，結果表明空間電荷是發生極化弛豫的主要原因。
  12. The improved voltage model of rotor flux is proposed in the paper. it eliminates the influence to actual system function in the voltage model of rotor flux for the proper drift problem and cumulative error of pure integral calculus tache

    提出了改進的電壓型轉子磁鏈估算模型，消除了電壓型轉子磁鏈估算模型中純積分環節所固有的漂移問題和積累誤差對實際系統性能的影響。
  13. Interface charge has a profound influence on the breakdown voltage of flr structure. on severe condition it can make the outer flr far from main junction disfunction

    界面電荷對場限環終端結構的擊穿電壓影響很大，嚴重的甚至可以使遠離主結的場限環失去作用。
  14. Influence to the protection device of earth point of the secondary circuit of voltage and current transformer

    互感器二次迴路接地點對保護裝置的影響
  15. To resolve the situation that the sensitivity of present ground fault protection schemes is low for the large - sized hydro - generators, a kind of protection scheme based on the fault component of third - harmonic voltage and two kinds of protection scheme based on the fault component of zero - sequence voltage at the terminals and neutral are developed, and they can obtain higher sensitivity and reliability and provide 100 % protection for the stator windings. the influence of noise on the stator ground fault protection based on the local modulus maximum of wavelet transform is analyzed

    針對目前大型水輪發電機定子繞組單相接地保護靈敏度偏低的問題，通過分析單相接地故障后機端和中性點零序電壓的變化特點，提出了一種基於機端和中性點三次諧波電壓故障分量和兩種基於機端和中性點零序電壓故障分量的高靈敏度、高可靠性保護方案，並實現定子繞組的100 %保護。
  16. The influence of stray inductance in the module circuit to turn - off transient over voltage of igct has been investigated systematically, the surge current calculation has been done by simulation, and the short circuit failure once occurred in experiment has been analyzed by computer simulation, reproduced the breakthrough failure happened in experiment by means of simulation

    充分利用計算機模擬的優勢，詳細分析了模塊電路雜散電感對igct關斷過電壓的影響，進行了短路浪涌電流計算，對試驗中發生的短路故障進行計算機模擬分析，重現了試驗中出現的誤觸發貫穿短路故障現象。
  17. Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet

    基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高
  18. Zero - voltage turn - on and zero - voltage turn - off in lagging arm and leading arm of soft - switching topology, working waveform of power transformer and process of rectifier and transition are presented in detail. the influence of resonant inductance of the power transformer, resonant capacitor and variation of load to the process of soft - switching are given

    主要對軟開關滯后橋臂和超前橋臂的零電壓開通、關斷過程，功率變壓器的工作波形及整流換流過程進行了詳細的模擬分析，並重點討論了逆變器的諧振電感、諧振電容以及負載變化對軟開關過程的影響。
  19. We also studied some characteristics of sidagating effect using mesfet fabricated in planar boron implanted process including photosensitive, hysteresis, influence of sidegating effect on mesfet threshold voltage, influence of drain - source voltage on sidegating threshold voltage, influence of exchanging drain and source electrode on sidegating threshold voltage, relation between sidegating threshold voltage and the distance between side - gate and mesfet, relation between sidegating effect and floating gate, and so on

    本文還採用平面選擇離子注入隔離工藝，開展了旁柵效應的光敏特性、遲滯現象、旁柵效應對mesfet閾值電壓的影響、 mesfet漏源電壓對旁柵閾值電壓的影響、漏源交換對旁柵閾值電壓的影響、旁柵閾值電壓與旁柵距的關系、旁柵效應與浮柵的關系等研究。
  20. The emphases of our research works are as follows : under ultra - low temperature ( about 0. 236k ) conditions, how the frequency and power of the saw and the source drain voltage influence the acoustic current ; and the relationship between the source drain current and the split - gate voltage ; and how to find the cut off voltage of the quasi - 1d electron channel ; and also the frequency character of the idt in the saw parts

    研究的重點為，在甚低溫（ 0 . 236k ）下，通過實驗研究表面聲波的頻率和功率，源漏偏壓等因素對聲電電流的影響;研究準一維電子通道中不同源漏電流與分裂門負偏壓的關系，以找到分裂門的鉗斷點電壓;以及研究聲表面器件叉指換能器的頻率特性等。
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