wafer gettering 中文意思是什麼
wafer gettering
解釋
晶片吸除-
The results of the experiments were that leakage - currents of the 77 % diodes have obviously reduced in form 0. 08 ~ 11 a / cm2 to a value smaller than 0. 032 a / cm2. therefore, the gettering efficiency and homogeneity has been demonstrated on devices. it was also concluded that, from the experiments, the cavities band for gettering on the pol ished backside of the wafer was more efficient than that on the rough side
氦微孔在雙面拋光矽片上顯示了很好的吸雜效率和均勻性， 77 %的注氦微孔二極體經過熱處理j *值從0 . 08一n州/ cm 』降到了0 . 032州/ cm 』以下: he +注入粗糙背面的二極體也有相當好的吸雜效果，但總體上要弱於拋光背面的吸雜效果;且單、雙面拋光片的人值的最大降低幅度都達三個數量級，證明了氦微孔強大的吸雜能力。 -
The efficiency and the homogeneity of cavities gettering were analyzed by measuring the leakage - current for the diodes in a wafer, which was thermally treated at the optimal condition, that is 700 1hr, then 800 6hr and slow cooling down
第二階段，氦微孔吸雜效果的研究。採用做有二極體的大矽片在700 lhr + 800 6hr + 』漫降溫的熱處理條件下對微孔吸雜的效率、均勻性進行實驗。 -
Some previous experiments have showed that cavities had more efficient gettering than p - diffusion, mechanical damage and ion implantation. most of studies about cavities gettering are concentrated on the peculiarity of cavities gettering metal impurities intentionally into silicon wafer from the viewpoint of basic study. this technique especially applied to low - contamination process, how ever, has not been carefully studied, which should be important to the semiconductor manufacturing
而過去的工作多集中在從基礎研究的角度研究氦微孔對有意摻入金屬雜質的矽片的吸除特性，對無意引入的低濃度金屬雜質的器件吸雜效果的研究卻非常少，這方面的研究是氦微孔技術走向實際應用的必經之路。
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