wet etching 中文意思是什麼
wet etching
解釋
濕腐蝕-
The silicon plates are formed reverse four wimble array in koh solution by wet - etching technology. then the electrochemical etching experiments are done in three poles electrobath. and some technology questions such as heat oxygenation, light etching, wet etching and electrochemical etching have been analyzed. at the same time sample appearances are analyzed by scanning electron microscope. according to current burst model theory, the electrochemical deep holes etching mechanism are analyzed
在三極電解槽中，進行了電化學深刻蝕的探索性實驗。對氧化、光刻、濕法刻蝕和電化學刻蝕中的工藝問題進行了初步的理論和實驗研究，同時，採用sem對實驗樣品進行了形貌分析，並採用電流突破模型對電化學深孔刻蝕機理進行了理論分析。 -
Because the cross - section of the oversized rib waveguide we fabricated by wet - etching was trapeziform, we analyzed the transmission of oversized rib waveguide by combining effective refractive - index method. the influence of some factors on the optical transmission loss, such as material structure, the height of rib waveguide, and the thickness and refractive index of waveguide layer and up - layer of polymer material, was analyzed
因為濕法腐蝕工藝製作的反脊波導橫截面是梯形狀的，因此論文中採用了一種簡單有效的方法，即有效折射率法，對梯形反脊波導的光傳輸損耗特性進行了分析，同時考慮金屬電極產生熱場對脊波導傳播特性的影響。 -
Studies on subsurface damage detection and wet - etching process of k9 optics
9基片的亞表面損傷探測及化學腐蝕處理技術研究 -
According to the working principle of thermo - electrode, we demonstrate the structure of enlarged reflection area and the structure of step broaden waveguide to improve the switch ' s performance and bring down the driving power. according to the fabricating condition of our lab, we proposed simple wet - etching method to fabricate the oversized waveguides and peeling - off method to fabricate the electrode
針對全內反射和熱電極的作用特點，在全內反射型熱光開關的設計中提出了擴大反射區結構和漸變展寬結構，理論模擬和實驗結果表明該方法能有效地提高了開關性能，降低了驅動功率。 -
For example, when the gaas substrate is etched by h2so4 - h2o2, h2o2 is adopted to oxidate the substrate first, then the substrate was etched by means of laser wet etching in h2so4 solvent. theoretical analysis and experimental results show that compared with the mixed - solvent - etching, more smooth etched surface can be obtained by this method ; and because the substrate is preprocessed, time of laser induced wet - chemical etching
理論分析和實驗結果都表明，次序選擇腐蝕法可以有效地提高腐蝕表面的均勻性;因先對基片進行化學腐蝕處理，大大縮短了激光化學腐蝕的時間;使溶劑先後分別作用於基片，可以提高激光化學腐蝕溶劑配比的精度容差，使激光化學腐蝕控制和分析更加簡單。 -
The purpose of this thesis is to develop the laser assisted wet chemical etching on the gaas substrate. the main contents and contributions include : 1 ) laser - assisted wet mask - etching method and poles - etching method have been proposed laser - assisted wet mask - etching method is that the area which need not etched is covered by mask film, and the uncovered area is processed by laser induced wet etching
本文的工作就是圍繞半導體gaas基片的激光化學誘導液相腐蝕技術開展的，主要的研究結果和創新之處如下: 1 ）提出了激光誘導液相抗蝕膜掩蔽法和電極腐蝕法抗蝕膜掩蔽法是指在基片表面不需要腐蝕的區域用抗蝕膜覆蓋，激光照射在無抗蝕膜區域，對基片進行腐蝕。 -
In order to make integration of theory with practice, a lot of experiments have been done. mask - making technology, photoetching and wet - etching processes have been optimized. the author also presents the application and commercial value of silicon v - groove arrays
在實踐上，對製作工藝積極探索，提出新的制備硅掩蔽膜的工藝方案，對影響光刻質量的因素深入分析，試驗摸索出適用於v型槽的各向異性濕法腐蝕的腐蝕液配方，獨立優化設計了製作硅v型槽的相關工藝，製作出高質量的硅v型槽。 -
Compared with the conventional chemical etching, laser assisted wet chemical etching can eliminate the effect of crystal orientation efficiently and fabricate more diversified etched pattern ; compared with the laser assisted gas chemical etching, the required condition for laser wet etching can be realized more easily and the operation can be simplified ; compared with the ion etching, it has advantages of no ion damage to substrate, avoiding over - etching and cost - effective
半導體的激光誘導液相腐蝕與普通化學腐蝕相比，可以有效地消除晶體取向影響，製作出更加多樣化的腐蝕圖形;與激光誘導氣相腐蝕相比，其工藝條件更加容易實現，操作更加簡單;與干法離子刻蝕相比，對基片無離子損傷，過度腐蝕容易控制，成本低。 -
The lowest threshold current 1. 8ma is achieved with continuous - wave at room temperature, the maximum output power is 7. 96mw. for the resesrch work on the fabrication procedures, we discusses selective oxidation and selective wet etching
利用濕法氧化和選擇性腐蝕相結合工藝研製出室溫連續工作的vcsel ，最低閾值電流為1 . 8ma ，輸出功率為7 . 96mw 。 -
This thesis work has researched the fabrication technics of photonic crystal defect waveguide with air - bridge structure and collecting waveguide ; suggested using uv - lithography and wet etching to fabricate traditional waveguide, after that, using eb - lithography and dry etching to fabricate photonic crystal holes, so can reduce the fabrication cost by a big range ; designed the moulding board, which can fabricate the air - bridge structure and is convenient for recognizing position in eb - lithography ; the structure consisted of traditional waveguides and etching grooves are fabricated on soi successfully, then an successful eb - lithography is realized on the structure, the defect waveguide collected with the traditional waveguide quite well ; used the etching grooves to do the sacrificial layer etching experiment, which grounded etching sacrificial layer by photonic crystal holes in next step
提出採用紫外光刻工藝製作傳統波導結構之後，通過電子束曝光和干法刻蝕製作光子晶體小孔的工藝方案，大幅度減低了製作成本；設計出可形成空氣橋結構、並且適用於電子束曝光位置識別的光刻模板，在soi材料上成功製作出帶有空氣橋刻蝕預留槽以及接續光波導的結構，在該結構上成功實現了光子晶體帶隙波導的電子束曝光，帶隙波導與接續光波導位置接續良好；最後利用預留槽進行了刻蝕犧牲層的實驗，為下一步利用光子晶體小孔刻蝕犧牲層形成空氣橋結構打下了基礎。 -
At the part of experiment, we study the wet - etching technique of glass substrate, based on semiconductor process, which includes photolithography and etching
實驗部分研究了基於半導體工藝的玻璃濕法刻蝕技術。包括玻璃面板上的光刻和刻蝕。 -
Hf - based solution is widely used for cleaning and wet etching sio2 in pre - diffusion clean process
摘要以氟化氫為基礎的溶液被廣泛地用在擴散前清洗工藝中的二氧化矽清洗與蝕刻中。 -
We discuss a low cost fabrication method of a diffractive microlens with high performance for both blue and red dvd objective lenses, which consists of single - step photolithography and a wet etching process
摘要採用單步光刻和濕法腐蝕工藝，低成本快速製作面向高性能藍光和紅光dvd光學頭物鏡的衍射微透鏡。 -
Etching time has been extended in wet etching course
在電化學刻蝕過程中，需增加循環裝置。 -
Immersion wet etching system
浸漬式蝕刻系統 -
Aluminium target with deep amplitude modulation fabricated by chemical wet etching process
調制靶的化學腐蝕制備工藝研究 -
The work mainly consists of four parts : the first part is to use oxidation and lpcvd technique to produce sio2 mask film and si3n4 insulation film in order to enhance the heating efficiency of micro chamber, and guarantee the carry out of the reaction. the second part is to use the combination of dry etching and wet etching to produce reaction micro chamber, it is the container which carry out the pcr reaction, and dna sample carry out amplification reaction here. the third part is to use the sputtering, photolithography to produce heaters and temperature sensors which heat the reaction micro chamber and provide the temperature condition for the pcr reaction
首先，利用氧化工藝和lpcvd技術，生長sio _ 2掩膜層和si _ 3n _ 4絕緣層，以提高反應腔的熱效率，保證擴增反應的順利進行；其次，用濕法腐蝕和干法刻蝕相結合的方法加工微型腔體，使之作為dna樣品進行pcr擴增反應的容器；第三，用濺射、光刻等工藝在微型腔體底部製作微型加熱器和溫度傳感器，實現對反應腔體的加熱及其溫度的精確測量，提供pcr擴增反應所需的溫度條件。 -
Wet etching system
濕式蝕刻系統 -
We use wet etching and rie to fabricate the awg device with tir mirrors respectively
採用濕法腐蝕和干法刻蝕兩種工藝分別製作出了全內反射型awg器件。 -
For mentioned reasons above, considerable interests have been focused on laser induced wet etching
正因如此，激光腐蝕技術逐漸成為國內外學者研究的熱點之一。
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