width barrier 中文意思是什麼
width barrier
解釋
橫檔疵點-
Established in 1987, jinming is one of the leading providers of film extrusion process machines and blow molding machines, is well known as the biggest plastic machine manufacturer of 20m width three - layer coextrusion blown film line in asia and the first supplier of seven - layer coextrusion high barrier blown film line and five - layer coextrusion non - pvc infusion bag blown film line
成立於1987年，是國內知名的薄膜擠出加工裝備和中空吹塑成型設備供應商之一，具有雄厚的研發和製造實力，設計製造的兩臺20米幅寬三層共擠薄膜吹塑機組是迄今為止亞洲第一、世界第二的薄膜吹塑機組，並且在國內首家推出七層共擠高阻隔薄膜吹塑機組和五層共擠輸液袋膜專用吹塑機組。 -
The electrical simulation compared the temperature and the current density distribution in copper lines with different width and barrier materials, the result indicating that the maximum temperature locates in the middle of the line and the 20 - degree obliquity is the most optimum one in the pore structure
在電學模擬過程中，對比了不同條寬和不同阻擋層材料下的互連線的溫度、電流密度分佈，以及不同通孔傾角下、不同阻擋層材料下的通孔的溫度、電流密度分佈。 -
For the first current plateau ， two kinds of sequential resonant tunneling of - process and - x process are observed in the wide barrier gaas / alas superlattice under various pressures for p < 2kbar ， the high field domain is formed by - process ， while for p > 2kbar ， the high field domain is formed by - x process when the barrier width was decreased to 2nm, we found that ground - state -
對于寬壘（ > 3 . 5nm ）的gaaa / alas超晶格，當流體靜壓力超過臨界壓力2kbar后，平臺寬度隨壓力的升高而收縮。對于窄壘（ 2nm ） gaaa / alas超晶格， u - i曲線上的平臺將不隨壓力變窄。 -
The effects of the two methods of " sucking - spouting " water and flow - deflection on the horizontal circulation were tested experimentally in a 50cm - width flume with a spur dike placed as a barrier
可以把主流的一部分能量傳給邊界層內靠近壁面的流體質點，使之加速，從而達到防止邊界層分離的目的。 -
The influence of the height, width and the shape of the metal barrier is calculated in this paper. the simulation results show that the shape of the barrier boundary has great influence on discharge efficiency. the variation of electron temperature with gas pressure is also investigated and its result is coincident with the recorded data
對新型蔭罩式結構分析了單元結構的變化對電子平均溫度和放電效率的影響，並觀察了隨壓強的變化電子平均溫度的變化趨勢，模擬結果表明斜邊或弧狀的內斜式結構可提高放電效率，且電子溫度隨壓強的變化趨勢同文獻相符。 -
And emission wavelength depends on ratio of well / barrier width more than number of wells. some useful data has been found through experiments
阱壘寬厚度比a較之mqw的周期數目n對pl發光波長的影響更大。 -
Since ic came forth, its evolution have almost accorded with the rule of moore. now the technology of ic had broken through the barrier of wire width at 100nm. with the condition of this, more and more problems of physical design of vlsi circuits change into np - hard problem
自從ic誕生以來， ic晶元的發展基本上遵循了摩爾定律，目前已經突破100nm大關，相應的系統規模的擴大，使得ic物理設計中的很多困難日益np問題日益棘手。 -
( 2 ) several samples of different structure parameters are grown by low - pressure metal - organic chemical vapor deposition ( lp - mocvd ). it is found that pl peak intensity, full width at half maximum ( fwhm ) and light output intensity are greatly dependent on number of wells. ratio of well / barrier width nearly has no effect on pl peak intensity and fwhm, but has little relation to light output intensity
通過分析pls ，可以及時獲取材料生長和結構設計的數據，對質量控制有重要的指導意義； （ 2 ）對不同結構的gainp algainp多量子阱樣品進行了光致發光及出光強度的測量，發現mqw的周期數目n對pl峰強度、半峰寬和出光強度的影響最大；阱壘寬厚度比a對pl峰強度和半峰寬的影響較小，但對發光強度的影響較大。
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