zero bias 中文意思是什麼

zero bias 解釋
零偏差
  • zero : n (pl zeros zeroes)1 【數學】零;零號。2 零位;零點,起點;(溫度表的)零度,冰點;座標原點;無...
  • bias : n 1 成見,先入之見,偏執,偏見 (opp Impartiality ); 傾向,嗜好;癖 (towards)。2 (衣服等上面...
  1. We have investigated transport properties of electrons in magnetic quantum structures under an applied constant electric field. the transmission coefficient and current density have been calculated for electron tunneling through structures consisting of identical magnetic barriers and magnetic wells and structures consisting of unidentical magnetic barriers and magnetic wells. it is shown that the transmission coefficient of electrons in a wider nonresonance energy region is enhanced under an applied electric field. the resonance is suppressed for electron tunneling through double - barrier magnetic ( dbm ) structures arranged with identical magnetic barriers and magnetic wells. incomplete resonance at zero bias is changed to complete resonance at proper bias for electron tunneling through dbm structures arranged with different magnetic barriers and magnetic wells. the results also indicate that there exist negative conductivity and noticeable size effect in dbm structures

    對磁量子結構中電子在外加恆定電場下的輸運性質進行了研究.分別計算了電子隧穿相同磁壘磁阱和不同磁壘磁阱構成的兩種磁量子結構的傳輸概率和電流密度.計算結果表明,在相當寬廣的非共振電子入射能區,外加電場下電子的傳輸概率比無電場時增加.對于電子隧穿相同磁壘磁阱構成的雙磁壘結構,共振減弱;對于電子隧穿不同磁壘磁阱構成的雙磁壘結構,無電場作用時的非完全共振在適當的偏置電壓下轉化為完全共振,這時的電子可實現理想的共振隧穿.研究同時表明,磁量子結構中存在著顯著的量子尺寸效應和負微分電導
  2. The thesis has done the widespread investigation and study to the domestic and foreign ’ s technologies of analogy low voltage and low power, and analyzes the principles of work, merts and shortcomings of these technologies, based on the absorption of these technologies, it designs a 1. 5v low power rail - to - rail cmos operational amplifier. when designing input stage, in order to enable the input common mode voltage range to achieve rail - to - rail, it does not use the traditional differential input pair, but use the nmos tube and the pmos tube parallel supplementary differential input pair to the structure, and uses the proportional current mirror technology to realize the constant transconductance of input stage. in the middle gain stage design, the current mirror load does not use the traditional standard cascode structure, but uses the low voltage, wide - swing casecode structure which is suitable to work in low voltage. when designing output stage, in order to enhance the efficiency, it uses the push - pull common source stage amplifier as the output stage, the output voltage swing basically reached rail - to - rail. the thesis changes the design of the traditional normal source based on the operational amplifier, uses the differential amplifier with current mirror load to design a normal current source. the normal current source provides the stable bias current and the bias voltage to the operational amplifier, so the stability of operational amplifier is guaranteed. the thesis uses the miller compensate technology with a adjusting zero resistance to compensate the operational amplifier

    本論文對國內外的模擬低電壓低功耗技術做了廣泛的調查研究,分析了這些技術的工作原理和優缺點,在吸收這些技術成果基礎上設計了一個1 . 5v低功耗軌至軌cmos運算放大器。在設計輸入級時,為了使輸入共模電壓范圍達到軌至軌,不是採用傳統的差動輸入結構,而是採用了nmos管和pmos管並聯的互補差動輸入對結構,並採用成比例的電流鏡技術實現了輸入級跨導的恆定;在中間增益級設計中,電流鏡負載並不是採用傳統的標準共源共柵結構,而是採用了適合在低壓工作的低壓寬擺幅共源共柵結構;在輸出級設計時,為了提高效率,採用了推挽共源級放大器作為輸出級,輸出電壓擺幅基本上達到了軌至軌;本論文改變傳統基準源基於運放的設計,採用了帶電流鏡負載的差分放大器設計了一個基準電流源,給運放提供穩定的偏置電流和偏置電壓,保證了運放的穩定性;並採用了帶調零電阻的密勒補償技術對運放進行頻率補償。
  3. The performance of modulators employing mqw is governed by the quantum confined stark effect. in order to simplify the analysis of mqw, we obtain an explicit formula concerning the correlations between the gaas / gaalas quantum well widths of finite potential barrier structure and those of infinite potential barrier structure under the condition that the ground state energies are equal at zero bias states. then the transfer matrix method is used to investigate the optical field distribution in the mqw waveguide based on five - step asymmetric coupled quantum well structure that is really used in the modulator

    本論文首先根據量子限制stark效應,發展了等效寬度思想,提出了把單量子阱結構的有限深勢阱的分析轉化為無限深勢阱模型的顯式公式,從而大大簡化了電場下量子阱結構的分析;接著利用轉移矩陣,把周期性的量子阱結構簡化為三層結構,得到了實際採用的非對稱三阱結構量子阱的場分佈,並討論了量子阱結構的偏振特性。
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