低噪聲晶體管 的英文怎麼說

中文拼音 [dīzàoshēngjīngtǐguǎn]
低噪聲晶體管 英文
low noise tra istor
  • 噪 : 動詞1. （蟲或鳥叫） chirp 2. （大聲叫嚷） make noise; make an uproar; clamour
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 管 : Ⅰ名詞1 （管子） pipe; tube 2 （吹奏的樂器） wind musical instrument 3 （形狀似管的電器件） valve;...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. Based on the analysis of transistor amplifier noise model, we select devices with low noise in reason. and the method how to reduce phase noise and phase jitter is also discussed

    依據晶體管放大器的噪聲模型分析合理選擇了低噪聲的元器件，對降低相位噪聲和相位抖動的方法作了一些探討。
  2. Semiconductor discrete devices. detail specification for type 3dg144 npn silicon high - frequency low - noise low - power transistor

    半導體分立器件. 3dg144型npn硅高頻低噪聲小功率晶體管詳細規范
  3. Semiconductor discrete devices. detail specification for type 3dg143 npn silicon high - frequency low - noise low - power transistor

    半導體分立器件. 3dg143型npn硅高頻低噪聲小功率晶體管詳細規范
  4. Semiconductor discrete devices. detail specification for type 3dg142 npn silicon high - frequency low - noise low - power transistor

    半導體分立器件. 3dg142型npn硅高頻低噪聲小功率晶體管詳細規范
  5. Semiconductor discrete device. detail specification for type cs203 gaas microwave low noise field effect transistor

    半導體分立器件. cs203型砷化鎵微波低噪聲場效應晶體管詳細規范
  6. Semiconductor discrte device. detail specification for silicon npn ultra - high frequency low - noise difference match transistor of type 3dg210

    半導體分立器件. 3dg210型npn硅超高頻低噪聲差分對晶體管.詳細規范
  7. Semiconductor discrete device. detail specification for silicon npn ultra - high frequency low - noise dual - difference match transistor of type 3dg213

    半導體分立器件. 3dg213型npn硅超高頻低噪聲雙差分對晶體管.詳細規范
  8. Lowest noise figure of a rf transistor is not normally where the input is perfectly matched

    射頻晶體管的最低噪聲系數通常不在輸入完全匹配的地方。
  9. To reduce power dissipation of the amplifier, a kind of on / off technology is used in the circuit. with a little bias current circuit to control the main bipolar transistor operation, the transistor will be in a state of on / off

    採用器件旁路小電流工作電路，實現對低噪聲放大器主要工作晶體管的控制，使該晶體管按需要分別處于工作或關斷狀態，保證了放大器的極低功耗。
  10. Semiconductor discrete devices detail specification for type 3dg44 silicon uhf low - noise transistor

    半導體分立器件. 3dg44型硅超高頻低噪聲晶體管.詳細規范
  11. Semiconductor discrete devices detail specification for type 3dg251 silicon uhf low - noise transistor

    半導體分立器件. 3dg251型硅超高頻低噪聲晶體管.詳細規范
  12. Semiconductor discrete devices detail specification for type 3dg142 silicon uhf low - noise transistor

    半導體分立器件. 3dg142型硅超高頻低噪聲晶體管.詳細規范
  13. Semiconductor discrete devices. detail specification for type 3dg218 silicon microwave low - noise transistor

    半導體分立器件. 3dg218型硅微波低噪聲晶體管詳細規范
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