場發射電子象 的英文怎麼說

中文拼音 [chǎngfāshèdiànzixiàng]
場發射電子象 英文
field emission electron image
  • 場 : 場Ⅰ名詞1 （平坦的空地 多用來翻曬糧食 碾軋穀物） a level open space; threshing ground 2 [方言] （...
  • 發 : 名詞（頭發） hair
  • 射 : Ⅰ動詞1 （用推力或彈力送出） shoot; fire 2 （液體受到壓力迅速擠出） discharge in a jet 3 （放出） ...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 電子 : [物理學] [電學] electron
  1. With the aid of baffle movement, a technique named masking pretreatment and the method of vacuum deposition have been used to fabricate the ag - o - cs photoemissive thin films with internal field - assisted structure for the first time. the internal field - assisted photoemission characteristics of ag - o - cs thin films show that the photoelectric sensitivity is increased when the internal electric field is applied to the thin films, which indicates that the electric field has been effectively provided to the thin films by the above - mentioned internal field - assisted structure. such an enhanced photoemission is attributed to the variations in energy - band structure of ag - o - cs thin films, and which are considered to induce the lower - energy electrons to participate in the photoemission

    通過掩膜預處理和擋板轉移技術的配合，利用真空沉積方法首次制備了內場助結構ag - o - cs光電發射薄膜。 ag - o - cs薄膜內場助光電發射特性測試結果表明，該方法能夠有效地實現ag - o - cs薄膜體內電場的加載與表面電極的引出，薄膜光電靈敏度隨內場偏壓的增大而上升。 ag - o - cs薄膜在內場作用下的光電發射增強現象與薄膜體內能帶結構變化低能電子參與光電發射等物理機制有關。
  2. Because that complex phenomena in pegs involve kinetic effects of plasma and cathode emitted electrons, and evolution of electromagnetic fields, particle - in - cell ( pic ) code is chosen as study tool, and a two and half dimensional cylindrical fully electromagnetic pic code cylinder2 - 1 / 2d, which is suitable for simulating the operation of the pegs, has been established

    考慮到peos物理現象涉及到等離子體和陰極發射電子的動力學行為以及空間電磁場的復雜變化，我們採用粒子模擬方法作為研究工具，研製了適用於peos物理問題模擬研究的二維柱坐標全電磁粒子模擬程序cylinder2 - 1 2d 。
  3. It is found that the fwm field can cause the asymmetry of electromagnetically induce transparency profile. in addition, the effect of different propagating orientations of probe field on the electromagnetically induced transparency is also discussed. in the molecular multi - level system with the perturbed superposition levels, we discuss the electromagnetically induced transparency, spontaneous emission enhancement, double dark resonance and double electromagnetically induced transparency by using the density matrix equation under weisskopf - winger approximation and dressed - state density matrix equation

    針對實際的實驗條件，考慮了一種影響量子干涉的新的因素-四波混頻場，研究了四波混頻場對雙光子探測的-型能級體系的eit的影響，發現四波混頻場能夠導致雙光子探測的eit線型的不對稱，在此基礎上，討論了不同探測場的傳播方式對eit的影響，針對分子中實際存在的包含有微擾能級的不同多能級系統，我們分別採用綴飾態繪景下的密度矩陣方程和weisskopf - wigner近似下的密度矩陣方程詳細地討論了電磁感應透明、自發輻射的干涉相消和相長、雙暗態共振和雙電磁感應透明現象。
  4. In simulations, all important phenomena, such as non - neutral sheath widening near cathode, cathode electron emitting, current channel migrating to the load side of the plasma, ion accelerating toward cathode and magnetic insulation of cathode emitting electrons etc, have been observed and depict the internal physics of this device. also presented is the influence of cathode emitted electrons on phenomena in the conduction processes of pegs. the simulation results show, without cathode emitted electrons, rapid magnetic field penetration takes place only in region near the cathode, with cathode emitted electrons, magnetic field penetration takes place in all plasma region

    診斷發現了陰極表面非中性鞘層的形成、陰極電子發射、電流通道的漂移、等離子體離子加速以及陰極電子磁隔離等物理現象，揭示了這一斷路器件的物理機制；分析了陰極電子對peos導通過程中的物理現象的影響，模擬結果顯示：忽略陰極電子作用，磁場滲透現象主要出現在陰極表面區域，考慮陰極電子作用，磁場滲透現象出現在整個等離子體區域。
  5. Owing to the field enhancement in the domain, the avalanching gain and recombination radiation are induced and the switches occur the special phenomenon of the lock - on effect

    由於單極電荷疇內電場強度增大，從而導致開關體內載流子雪崩倍增和輻射復合，引發了lock - on效應的特有現象。
  6. Field emission electron image

    場發射電子象
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