拉單晶 的英文怎麼說

中文拼音 [lādānjīng]
拉單晶 英文
monocrystal pulling
  • 拉 : 拉構詞成分。
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  1. Liquid encapaulated czochralski - grouwn gallium arsenide single crystals and as - cut slices

    液封直拉法砷化鎵單晶及切割片
  2. Because of the large stuff of silicon, complex structure of furnace and expensive cost, computer simulation is a best way to optimize design. in order to study the new heat system, we have calculated the heat zone of 200mm solar cell czsi growth

    由於拉晶過程中投料量較大，爐體結構復雜、造價昂貴，所以計算機數值模擬對于優化單晶爐設計是一種重要的工具。本論文用有限元方法對改造后單晶爐的適合的熱場進行了數值模擬。
  3. Consisting of the protracting graph of hydrogen - like atom ' s angle distributing, computer simulation of the symmetry of molecular orbital and chemical reaction mechanism, showing the molecular point group and symmetry element, computer simulation of molecular vibration, bravias ' s crystal lattice and their transforming, extracting of plane periodic lattice, extracting of solid periodic lattice, close packing of isometrical pellet and the structure of simple mental substance, close packing of unequal pellet and crystal structure of representative ionic crystal, computer simulation of phase analysis by x - ray diffraction

    內容包括類氫原子角度分布圖的繪制，分子軌道對稱性和反應機理的微機模擬，分子點群和對稱元素顯示，分子振動運動的微機模擬，布拉維晶格和晶格轉化，平面點陣抽取，立體點陣抽取，等徑網球的密堆積和金屬單質結構，不等徑圓球密堆積和典型離子晶體結構， x射線多晶衍射的微機模擬十個子模塊。
  4. Tera xtal s release of 4 - inch product is well timed to meet the higher market demand stemmed from the wide - adoption of cellular phones in the developed and developing countries. with guidance from prof. yu huang of national tsing hua university s crystal growth laboratory, the crystal growth team at tera xtal first gained invaluable experience over the past 8 months by using the garage - version of a crystal puller in countless test growth trials of 3 " lithium tantalate crystals

    透過清華大學材料科學中心單晶成長實驗室負責人黃瑜教授與日本、中國大陸兩地長晶專家的交流與指導；兆晶科技的長晶團隊採用自製的長晶實驗機臺，經過無數次三英寸鉭酸鋰拉晶試驗與設計改善，委由國外廠商改造制式量產機臺費時六個月為兆晶科技製作出第一臺四英寸單晶爐。
  5. The liquid encapsulated czochralski technique for growing gaas is receiveing considerable attention because it is capable of producing, at reasonable cost, large diameter semi - insulating gaas has a use in the production of gaas integrated circuits, and for this application it must have uniform properties over the whole area of a wafer cut from a grown crystal

    目前，液封直拉技術生長gaas單晶獲得了廣泛關注，因為它能夠以合理的成本生產大直徑的半絕緣單晶。半絕緣材料是生產集成電路等微電子器件的良好材料，而這種應用就要求整個晶片具有很高的均勻性。
  6. Tensile test and cyclic strain test of copper single crystal were performed. there are three stages in the plastic deformation

    觀測到銅單晶在拉伸變形過程中的三個階段，得到了循環應力應變曲線。
  7. The nucleation temperature of oxygen precipitation is about 750 c in lightly doped czsi, while the nucleation in heavily as - doped si occurred at a higher temperature ( 750 - 900 c )

    普通直拉硅氧沉澱在低溫750形核，重摻as硅單晶形核溫度較高，在750 - 900之間。
  8. Sem, transmission electron microscopy ( tem ), x - ray energy - dispersion analysis ( edax ), xrd, electron diffraction ( ed ) and high - resolution electron microscopy ( hrem ) were used to investigate the morphology, atomic composition and crystal structure of the nanowires. the hexagonal cdse nanowires with single crystal structure have been obtained in dmso under 140. ( 3 ) semiconductor te and cdte nanowires embedded in aao templates were fabricated for the first time by dc < wp = 7 > electrodeposition in ethylene glycol

    Sem 、 tem 、 edax 、 xrd 、 ed 、 hrem分析的結果表明，所得cdse納米線為六方晶型，晶體的（ 001 ）晶面沿平行於基底的方向擇優生長，且隨沉積溫度的降低，這種擇優生長的趨勢越來越強；納米線晶體在生長時，由於受aao模板孔徑的限制，形成c軸方向拉長的晶粒，其長徑比達5 1以上；晶體的大小和完善程度隨沉積溫度的降低而增大， 185沉積得到多晶六方cdse納米線，而140沉積時可得到六方cdse單晶納米線。
  9. The advance of research on oxygen precipitates in ncz silicon

    摻氮直拉單晶硅中氧沉澱的研究進展
  10. The shao lee soo professor of mechanical engineering at the university of illinois, urbana - champaign uiuc, usa, and his colleagues have produced a stretchable form of silicon that consists of sub - micrometer single crystal elements

    美國伊利諾依大學urbana - champaign分校uiuc機械工程學系教授黃永剛prof . yonggang huang和他研究夥伴製造出一種能夠拉伸的硅，它包含一個亞微米單晶體元件。
  11. From discussing the factors that influence the quality of the single - crystal, a positive method using the floating - boat method from the british mr corp. to control the diameter of the single - crystal was determined, and produced the highest quality low epd single - crystals international

    該實驗討論了各種因素對拉制磷化鎵單晶的影響。並確定了一套較優越的拉制方法，制備出了國際上現階段所能達到的最高水平的低位錯單晶。
  12. Three parts are discussed, respective, ( 1 ) the nanostructure in the perfect of single crystal copper structure and perfect titanium structure. ( 2 ) the tensile deformation mechanism and stress analysis of the point defects effects. ( 3 ) the significance of effect as size reduced

    本論文所探討的內容可分為三部分，分別為： （ 1 ）針對完美單晶銅結構與完美鈦結構的拉伸變形研究（ 2 ）包含了空孔點缺陷的拉伸變形結構研究（ 3 ）針對尺寸縮小后所造成的表面效應影響作一探討。
  13. Liquid encapsulated czochralski ( lec ) si - gaas is widely used in the microwave device and the substrates of high speed digital optic - electronic integrated circuits, and it has become one of major materials in information industry

    液封直拉法生產的半絕緣砷化鎵單晶（ lecsi - gaas ）被廣泛用於微波器件和高頻集成電路的襯底材料，成為當代信息產業的重要材料之一。
  14. The other has two metal - insulator - semiconductor ( ms ) contacts with lower leakage current ( less than 4 pa, 300v ) and better energy resolution ( about 10 % fwhm for 241am 59. 5kev line ) and poor working stability. in theoretical studies, the analysis on the phase equilibrium in the vapor growth of cdse single crystals shows that the stoichiometry of cdse crystals can be controlled effectively by controlling the stoichiometry of starting materials and the vapor growth temperature. besides, the investigation of the transporting properties of charge carries in cdse detectors indicates that the noise in energy spectrum detected by using the detectors with msm structure is caused by the hole injection, which is induced by electron injection and the light injection

    本文把cdse單晶體的生長、單晶體的成分、單晶體的性能以及單晶體在室溫核輻射探測器中表現出來的性能結合起來進行了比較系統的研究；採用垂直無籽晶氣相提拉法生長出了電阻率為10 cm量級、尺寸為中10mm 30mm的單晶體；制備出了能量解析度達10 （ fwhm ） （對~ （ 241 ） am59 . 5kev譜線而言）的cdse室溫核輻射探測器，取得了較好的研究結果。
  15. The test result of the rene95 sample showed that the maximum ultimate tensile strength can be as high as 1400mpa and has reached 97. 9 % of that of the sample fabricated by powder metallurgy ( pm ). the plastic elongation of the test sample can even exceed that of pm. the ultimate tensile strength of the test sample grown from single crystal substrate has surpassed 6 % of that of grown from the stainless steel substrate, at the same time the plastic elongation surpassed 40 %

    對成形試樣的力學性能測試結果表明，強度方面_ b最大為1400mpa ，已經達到了粉末冶金的97 . 9 ，塑性方面甚至超過了粉末冶金的水平；以單晶為基材的成形試樣其最大拉伸強度要比不銹鋼為基材的試樣高6 ，延伸率要高40 。
  16. Thus it is considered that the technique of dz formation by means of rtp may not be suitable for heavily boron - doping cz silicon. since the higher concentration vacancy could decrease the stress inducing by oxygen precipitates, the size of the oxygen precipitation with higher density was smaller in the hb si samples in comparison with the samples without rtp pre - annealing. moreover, as for the technique to generate dz by rtp in lightly boron - doping samples, it was found that the behavior of oxygen precipitation and dz was determined by the annealed temperature, followed annealing and ambient of rtf as well

    結果顯示，對于普通輕摻矽片能形成明顯的很寬的潔凈區的rtp預處理工藝，應用於重摻硼樣品時沒有潔凈區形成，所以rtp預處理獲得潔凈區的工藝不適用於重摻硼矽片，硼的大量摻雜對氧沉澱促進效果大於高濃度的空位對氧沉澱的洲排浙江大學碩士學位論文李春龍：直拉重摻硼硅單晶中氧沉澱的研究促進效果；大量空位的引入，有利於釋放氧沉澱生長過程的內應力，適當增加重摻硼樣品氧沉澱密度，減少其尺寸，並伴有層錯生成。
  17. The effect of high temperature in rapid thermal process ( rtp ) on the dissolution of oxygen precipitate generated by two - step ( low - high ) annealing is investigated

    摘要通過對已經過兩步（低高）退火的大直徑直拉矽單晶片進行高溫快速熱處理，研究矽中氧沈澱被高溫快速熱處理消融的情況。
  18. By means of chemical etching, microscope observation, eelectron probe x - ray micro - analyzer ( epma ), the micro - distribution of c acceptor defect in lec si - gaas wafer is investigated, the results show that there is serious influence of the density and distribution of dislocations on the distribution of c impurity in wafer

    本文通過ab腐蝕、 koh腐蝕，金相顯微鏡觀察，透射電鏡能譜分析，電子探針x射線微區分析，研究了液封直拉法生長的非摻半絕緣砷化鎵（ lec ， si - gaas ）單晶中碳的微區分佈。
  19. Surface effect, tension and bending of nano single - crystal copper are researched on the basis of molecular dynamics using the eam ( embedded atom method ) potential

    本文主要應用分子動力學方法對納米單晶銅桿的表面效應及拉伸、彎曲性能做了分析和研究。
  20. The technical breakthroughs in growth of nd : cngg had been made. in particular, continuous laser operation was achieved from nd : cngg pumped by ld. when the crystal wafer was end - pumped by one bar of ld with 807nm wavelength, the cw laser output power of 123. 1 mw was obtained with slope efficiency of 22. 3 %

    本論文用自動化熔體提拉技術成功生長出< 111 >方向的直徑25mm以上，長度80mm以上的平界面無核心nd : cngg單晶，確定了晶體結構和物相，測量了晶體的光譜性能，晶體消光比達到34db ，晶體生長技術有新的突破，實現了連續激光運轉，用單支807nm半導體激光二極體端面泵浦該晶體片子，在國內首次獲得123 . 1mw的1 . 062 m連續激光輸出，斜效率達22 . 3 % 。
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