拉晶工藝 的英文怎麼說
中文拼音 [lājīnggōngyì]
拉晶工藝
英文
crystal pulling technique-
During the course of the manufacture for packaging 2000 pixel hgcdte irfpa wafer, some crucial techniques are solved, such as the design of the button stem structures with inclined dragging wires applied in cryogenic platform, the optimization of long linear irfpa detector ' s signal wires layouts, the implement of a fanout board having thin film gold metalization for defining the required electrical conductors and a method of hermetically sealed vacuum enclosure of large dimension windows, etc
在用於封裝2000元碲鎘汞焦平面晶元的分置式微型杜瓦研製中，詳細闡明了一種焦平面晶元其裝載面為斜拉式支撐結構的設計，實現了探測器外引功能線的布線優化及其輸出引線工藝改進，並提出了一種大尺寸高氣密光學窗口的焊接方法等關鍵技術。Therefore, in this paper, two directional solidification methods, czochralski method and electron - beam floating zone melting method, were used to obtain such material. the directional solidifition microstructures of si - tasi2 system was performed using neophot - 1, amray - 100b sem and jem - 2000cx tem analysis technique
本文採用切克拉斯基法（ cz法）和電子束區熔法（ ebfzm ）兩種定向凝固方法制備該共晶自生復合材料；藉助金相技術、電鏡技術、圖象處理技術等多種分析測試手段，考察了si - tasi _ 2共晶定向凝固組織和及其相應的工藝規范。The direct - nitridation of silicon wafer in nitrogen is very important because it involves in silicon wafer ' s heat treatment, ic technics and pulling monocrystal in nitrogen
在矽片的熱處理、集成電路工藝和氮氣保護的拉晶過程中，都涉及到硅的氮化問題，因此矽片氮氣直接氮化的研究意義重大。In this paper, 130mm diameter hot - rolled bars ( 3 transus temperature is 798 c ) were used in experiments. the superplastic property of ti - 1023 alloy was studied systematically by the experiments of tensile and compression. the preparation method of fine - crystalline structure and the processing parameters of superplastic forging are optimized
本文以130mm熱軋棒材為原材料，通過超塑性拉伸和超塑性壓縮試驗，對ti - 1023合金的超塑性進行系統研究，研究坯料細晶組織制備方法，優化超塑成形工藝參數，為高筋薄腹板復雜形狀ti - 1023合金鍛件超塑性等溫模鍛工藝的制定提供試驗依據。Three factors, such as pull - up type, the materials and structure of crystallizing mould, and the temperature field in crystallizing mould, influencing on continuous up - casting for aluminum were analyzed, which laid the foundation of the application to continuous up - casting technology for aluminum bar
分析研究了引拔拉坯制式、結晶模材料及結構、結晶模內溫度場三因素對鋁上引連鑄的影響規律，結果表明上引連續鑄造過程中施加適當頻率的反推和反推量有利於桿坯連鑄的持續，結晶模自身的性能及模內溫度場的狀態對金屬鋁桿上引連鑄工藝的實現有直接影響。Thus it is considered that the technique of dz formation by means of rtp may not be suitable for heavily boron - doping cz silicon. since the higher concentration vacancy could decrease the stress inducing by oxygen precipitates, the size of the oxygen precipitation with higher density was smaller in the hb si samples in comparison with the samples without rtp pre - annealing. moreover, as for the technique to generate dz by rtp in lightly boron - doping samples, it was found that the behavior of oxygen precipitation and dz was determined by the annealed temperature, followed annealing and ambient of rtf as well
結果顯示，對于普通輕摻矽片能形成明顯的很寬的潔凈區的rtp預處理工藝，應用於重摻硼樣品時沒有潔凈區形成，所以rtp預處理獲得潔凈區的工藝不適用於重摻硼矽片，硼的大量摻雜對氧沉澱促進效果大於高濃度的空位對氧沉澱的洲排浙江大學碩士學位論文李春龍：直拉重摻硼硅單晶中氧沉澱的研究促進效果；大量空位的引入，有利於釋放氧沉澱生長過程的內應力，適當增加重摻硼樣品氧沉澱密度，減少其尺寸，並伴有層錯生成。Prepared technical parameters were optimized by l9 ( 34 ) experiment analysis. a unique method for cleaning and drying of substrate - cleaning used by scour, drying used by infrared light was fished out by large numbers of experiment. chemical mechnism of zno thin film prepared by sol - gel technique was discussed by dta for the first time. by the measurements of sem, xrd and uvs, the thin film was analysed. the result proved that the thin film with strongly preferred orientation of c - axis perpendicular to the substrate surface which surface was homogenous, dense and crackfree was the crystalline phase of hexagonal wurtzite. the thin film was composed of plentiful asteroidal crystal which crystal dimension approximately 10 30nm. the average transmittance of thin film in visible region was above 90 %. the results of measurements else also proved that the thickness of single dip - coating was 75 240nm, this films resistivity was found to be 3. 105 102 3. 96 105 ? cm. the thickness and resistivity of thin film influenced by dope - content, withdrawal speed, pre - heat - treatment, anealing were reseached respectively
利用xrd 、 sem以及uvs光譜儀等分析方法對薄膜進行了研究，結果顯示，所制備的薄膜為六方纖鋅礦型結構，具有高c軸擇優取向性；表面均勻、緻密，薄膜材料由許多星狀晶粒組成，晶粒尺寸大約為10 - 30nm左右；薄膜可見光透過率平均可達90 % ；對薄膜厚度以及電學性能進行了測定后發現：單次鍍膜厚度約為75 - 240nm ， al ~ （ 3 + ）離子摻雜型氧化鋅薄膜的電阻率在3 . 015 102 - 3 . 96 103 ? cm范圍內；分別研究了摻雜濃度、提拉速度、預燒溫度、退火溫度等工藝參數對薄膜厚度和電阻率的影響。Crystal pulling technique
拉晶工藝In the present research, scanning electron microscope ( sem ), laser raman spectroscopy ( lrs ), x - ray photoelectron spectroscopy ( xrs ), x - ray diffraction ( xrd ) and electron probe micro analysis ( epma ) were utilized to investigate the difference in micro - structure and elements distribution between domestic and foreign pdcs. combined with analysis on current manufacturing process, the mechanism for the difference was discussed. scanning electron microscope ( sem ), laser granularity analysis, atom emission spectroscopy ( aes ) and plasma emission spectroscopy ( icpaes ) are also utilized to investigate the grain shape and impurities of key material - diamond power
本課題採用掃描電鏡、拉曼光譜、光電子能譜、 x -射線衍射分析、電子探針等方法分析了國內外聚晶金剛石-硬質合金復合片在微觀組織結構、元素成分分佈方面的差異，結合對現有燒結工藝的分析，研討了造成這些差異的機理；採用掃描電子顯微鏡、激光粒度分析、原子發射光譜、等離子發射光譜等方法對關鍵原材料-金剛石微粉的晶形、雜質含量進行了比較分析測試。We article reviewed craftwork characteristic of growth yvo4 crystal by means of czochralski - cz. according to method of fimty - difference, we compiled field quantity estimate program ( fqep ) with vc + + that we can numerical simulate temperate - field and velocity - field while yvo4 dual - refractive optics crystal is growing
本文對丘克拉斯基（ czochralskicz ）法生長yvo _ 4晶體的工藝特點進行了評述，根據有限差分的方法，用vc + +語言編寫了場量計算程序，對yvo _ 4雙折射光學晶體生長過程中的溫度場和速度場進行了數值模擬。The suitable temperature field, growth rate of the crystals and rotation rate were decided by a mount of experiment and theory analysis
通過大量實驗並結合理論分析，設計了合適的溫場，適宜的提拉速度和旋轉速度等晶體生長的工藝參數。To achieve this aim, the effect of oxygen and carbon content on the solar cell conversion efficiency are studied in this thesis. three parts are studied in our work, firstly, the effect of annealing on the oxygen and carbon content and minor carrier lifetime of cz - si are studied, then put it into the process of solar cell and compare the capability of solar cell in two process
作為該項研究的先期工作，首先以p型（ 100 ）太陽電池用直拉矽片為實驗樣品，摸索出熱退火的最佳處理溫度；然後用常規工藝制備了單晶硅太陽電池，測試效率；結果發現用經過熱處理的矽片襯底制備的太陽電池比用沒有經過熱處理的矽片襯底制備的太陽電池其效率有明顯改善。分享友人