拉晶方向 的英文怎麼說
中文拼音 [lājīngfāngxiàng]
拉晶方向
英文
draw direction-
Secondly, based on the microbeam analytical technique, on the one hand, through investigating the characteristic of major elements in the mantle minerals the author acquired the static information from mantle ; on the other hand, through multi - point analysis of a part of the minerals from mantle, the auther got dynamic information from mantle. finally, generalizating the fruits of this study and predecessors, the autor holds that the constituents of lithospheric mantle possibly includes spinel lherzolites, clinopyroxenites, websterite, dunite, harzburgites, garnet lherzite, phlogopite lherzite, eclogites, clinopyroxene megacrysts ; compared with east china and north china platform, the research field mantle shows the characteristics of higher degree of partial melting processes and more depleted mantle ; the. upper mantle beneath north hetian area is heterogeneous, with a tendency of deficit in a12o3 and lree from kaliyang in west hetian to the river basin of kalakshi river and yulongkashi river ; the subduction of the crust beneath north hetian has ever occurred in geological history and caused the mixing of mantle - crust ; the depth of the origination of basaltic magmas beneath north hetian exceeds 73km ; the thickness of the lithosphere beneath the research area amounts to 204. 9km ; the mantle beneath north hetian has geological condtions for forming diamond deposits
最後，綜合本區幔源礦物和地幔巖石的特徵以及地球物理資料，得出如下結論：本區上地幔的物質組成有尖晶石二輝橄欖巖、二輝巖、單斜輝石巖、純橄欖巖、方輝橄欖巖、石榴石二輝橄欖巖、金雲母二輝橄欖巖、榴輝巖；與中國東部以及華北地臺上地幔相比，研究區上地幔具有富集主元素中相容元素和虧損其中的不相容元素的特徵，局部熔融程度較高；上地幔存在橫向和縱向的不均一性，從西部的克里陽到喀拉喀什河和玉龍喀什河流域， al和lree富集程度呈下降趨勢，不同來源的相同礦物中主元素的含量差異較大；地質歷史時期這里可能發生過地殼俯沖並產生殼幔混合作用；玄武巖漿的起源深度73km ；從幔源重砂礦物的溫壓估算結果，可以推斷出巖石圈厚度可達204 . 9km ；綜合巖石圈物質組成特徵、巖石圈熱狀態、地幔溫壓狀態、氧逸度以及幔源巖石和幔源礦物的化學成分，認為研究區具備了金剛石成礦地幔地質條件。The resultant grains tend also to be elongated along the direction of deformation.
所形成的晶粒沿變形方向被拉長。Therefore, in this paper, two directional solidification methods, czochralski method and electron - beam floating zone melting method, were used to obtain such material. the directional solidifition microstructures of si - tasi2 system was performed using neophot - 1, amray - 100b sem and jem - 2000cx tem analysis technique
本文採用切克拉斯基法（ cz法）和電子束區熔法（ ebfzm ）兩種定向凝固方法制備該共晶自生復合材料；藉助金相技術、電鏡技術、圖象處理技術等多種分析測試手段，考察了si - tasi _ 2共晶定向凝固組織和及其相應的工藝規范。Non - sinusoidal oscillation has the characters that the upward time of the continuous casting mold is longer than the downward time. it can reduce the friction between the mold wall and the strand surface, and prevents the strand from leaking and cracking, it can also improve the surface quality of slabs. it is the main development of continuous casting mold in the future
其中非正弦振動具有上升運動時間比下降運動時間長的特點，能減小結晶器與坯殼之間的摩擦力，防止坯殼的拉漏和拉裂，改善鋼坯的表面質量，是今後連鑄結晶器振動發展的主要方向。Sem, transmission electron microscopy ( tem ), x - ray energy - dispersion analysis ( edax ), xrd, electron diffraction ( ed ) and high - resolution electron microscopy ( hrem ) were used to investigate the morphology, atomic composition and crystal structure of the nanowires. the hexagonal cdse nanowires with single crystal structure have been obtained in dmso under 140. ( 3 ) semiconductor te and cdte nanowires embedded in aao templates were fabricated for the first time by dc < wp = 7 > electrodeposition in ethylene glycol
Sem 、 tem 、 edax 、 xrd 、 ed 、 hrem分析的結果表明，所得cdse納米線為六方晶型，晶體的（ 001 ）晶面沿平行於基底的方向擇優生長，且隨沉積溫度的降低，這種擇優生長的趨勢越來越強；納米線晶體在生長時，由於受aao模板孔徑的限制，形成c軸方向拉長的晶粒，其長徑比達5 1以上；晶體的大小和完善程度隨沉積溫度的降低而增大， 185沉積得到多晶六方cdse納米線，而140沉積時可得到六方cdse單晶納米線。The liquid - phase synthetic method was improved to obtain the sedimentation of yvo4, which makes the procedure more convenient and the sedimentation more compact. based on the syntheses of the raw materials, the czochralski method was used to grow the crystal from different charges. by comparing with the spectrum in the ultra - violet region of the yvo4 crystals grown in the same condition, the result was reached that the presence of the 1552 absorption peak is independent of the direction of the crystal growth and the annealing, but is related to the impurity of the charges
採用多種方法合成了用於晶體生長的yvo _ 4原料，改進了液相合成法中獲得yvo _ 4沉澱的方法，使得該方法更為簡便，獲得的沉澱更加緻密；在原料合成的基礎上，採用提拉法對來源不同的生長原料進行了生長，並通過對在相同氣氛下生長的晶體的紫外透過譜線的對比，指出了該吸收峰的存在與晶體生長方向及有無退火無關，進而提出該吸收峰的存在與合成原料中有無雜質有關。Prepared technical parameters were optimized by l9 ( 34 ) experiment analysis. a unique method for cleaning and drying of substrate - cleaning used by scour, drying used by infrared light was fished out by large numbers of experiment. chemical mechnism of zno thin film prepared by sol - gel technique was discussed by dta for the first time. by the measurements of sem, xrd and uvs, the thin film was analysed. the result proved that the thin film with strongly preferred orientation of c - axis perpendicular to the substrate surface which surface was homogenous, dense and crackfree was the crystalline phase of hexagonal wurtzite. the thin film was composed of plentiful asteroidal crystal which crystal dimension approximately 10 30nm. the average transmittance of thin film in visible region was above 90 %. the results of measurements else also proved that the thickness of single dip - coating was 75 240nm, this films resistivity was found to be 3. 105 102 3. 96 105 ? cm. the thickness and resistivity of thin film influenced by dope - content, withdrawal speed, pre - heat - treatment, anealing were reseached respectively
利用xrd 、 sem以及uvs光譜儀等分析方法對薄膜進行了研究，結果顯示，所制備的薄膜為六方纖鋅礦型結構，具有高c軸擇優取向性；表面均勻、緻密，薄膜材料由許多星狀晶粒組成，晶粒尺寸大約為10 - 30nm左右；薄膜可見光透過率平均可達90 % ；對薄膜厚度以及電學性能進行了測定后發現：單次鍍膜厚度約為75 - 240nm ， al ~ （ 3 + ）離子摻雜型氧化鋅薄膜的電阻率在3 . 015 102 - 3 . 96 103 ? cm范圍內；分別研究了摻雜濃度、提拉速度、預燒溫度、退火溫度等工藝參數對薄膜厚度和電阻率的影響。The technical breakthroughs in growth of nd : cngg had been made. in particular, continuous laser operation was achieved from nd : cngg pumped by ld. when the crystal wafer was end - pumped by one bar of ld with 807nm wavelength, the cw laser output power of 123. 1 mw was obtained with slope efficiency of 22. 3 %
本論文用自動化熔體提拉技術成功生長出< 111 >方向的直徑25mm以上，長度80mm以上的平界面無核心nd : cngg單晶，確定了晶體結構和物相，測量了晶體的光譜性能，晶體消光比達到34db ，晶體生長技術有新的突破，實現了連續激光運轉，用單支807nm半導體激光二極體端面泵浦該晶體片子，在國內首次獲得123 . 1mw的1 . 062 m連續激光輸出，斜效率達22 . 3 % 。分享友人