掩蔽區 的英文怎麼說
中文拼音 [yǎnbìqū]
掩蔽區
英文
occulting disk-
Vast intricate systems of fortifications, defended localities, and anti-tank obstacles, block-houses, pillboxes and the like, laced the whole area.
規模龐大的錯綜復雜的防禦系統，防禦據點，反坦克障礙物，碉堡和掩蔽設施等布滿了整個地區。Explains the steps that you must follow to cloak and uncloak folders in a workspace
說明要掩蔽和取消掩蔽工作區中的文件夾所必須執行的步驟。The purpose of this thesis is to develop the laser assisted wet chemical etching on the gaas substrate. the main contents and contributions include : 1 ) laser - assisted wet mask - etching method and poles - etching method have been proposed laser - assisted wet mask - etching method is that the area which need not etched is covered by mask film, and the uncovered area is processed by laser induced wet etching
本文的工作就是圍繞半導體gaas基片的激光化學誘導液相腐蝕技術開展的，主要的研究結果和創新之處如下: 1 ）提出了激光誘導液相抗蝕膜掩蔽法和電極腐蝕法抗蝕膜掩蔽法是指在基片表面不需要腐蝕的區域用抗蝕膜覆蓋，激光照射在無抗蝕膜區域，對基片進行腐蝕。At the initial stage of planar technique, b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region, and the good shield effect of sio2 film to b. but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly - changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high - reversal - voltage devics. thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed, while the former can lead to relatively large the base - region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr ; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency
在平面工藝初期，由於b在硅中的固溶度、擴散系數與n型發射區的磷相匹配， sio _ 2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大（ 1000時達到5 10 ~ （ 20 ） ，擴散系數小， b在硅中的雜質分佈不易形成pn結中雜質的線性緩變分佈，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁塗層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t _ f值較高，熱穩定性差；後者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。Winds are often stronger over offshore waters and on high ground. winds are less strong in areas sheltered from the prevailing wind direction
一般來說，離岸海域及高地風力較市區為強，由於風向關系而受地形掩蔽的地區風力較其他地區為弱。Acoustics - reference zero for the calibration of audiometric equipment - reference levels for narrow - band masking noise
聲學.測聽設備的校準參照區.掩蔽噪聲的參考等級In order to adapt the scheme to both the color image and the gray image, while embedding the watermarking into the image, the scaling factors are determined by the local luminance feature and texture features of the image. it can improve the embedding strength and the watermarking robustness. from the experimental results, the stego - images are extremely robust to common image processing such as median filter, jpeg compression and denoising after adding the stochastic noises
2 、提出了一種新的基於小波變換和紋理特徵的數字水印演算法，該演算法依據從圖像小波域提取出的紋理特徵來選取水印的嵌入位置，較好地利用了圖像的紋理區域，既能掩蔽較多的噪聲，又能較好地抵抗jpeg壓縮等一般性攻擊，調節了數字水印技術中存在的不可見性與魯棒性之間的矛盾。Apart from the area near the site boundary, the off - site radiological exposure is below the lower limit of the
除場邊界附近外，預期場外其他區域的照射水平低於進入掩蔽所的分享友人