摻缺缺陷 的英文怎麼說

中文拼音 [chānquēquēxiàn]
摻缺缺陷 英文
doping defect
  • 摻 : 摻動詞[書面語] （持; 握） hold
  • 缺 : Ⅰ動詞1 （缺乏; 短少） be short of; lack 2 （殘缺） be missing; be incomplete 3 （該到而未到） be ...
  • 陷 : Ⅰ名詞1 （陷阱） pitfall; trap2 （缺點） defect; deficiency Ⅱ動詞1 （掉進） get stuck or bogged do...
  • 缺陷 : defect; fault; faultiness; vitium; lesion; flaw; disorder; imperfection; drawback; blemish
  1. These experiments also showed a possible source of defects is a highly doped zn-diffused region in close proximity to the recombination region.

    這些實驗還表明，緊接近復合區的高摻Zn的擴散區有可能是一個缺陷源。
  2. But high strength concrete has many defects itself. mainly foy : with higher strength be much fragility ; the final strength increments are smaller for high volume silica - ash concrete ; because high strength concrete ’ s self - shrinkage is large, so the deformation performance is much severely with the strength increments

    而高強混凝土又有其自身缺陷，主要是:強度越高，脆性越大;摻入硅灰量大的高強混凝土，後期增長減小;由於高強混凝土自收縮大，因而變形性能也隨強度等級的提高而變得嚴重。
  3. It shows high potential on light - emitting devices, photodetector, optoelectronic devices and sensor

    結果表明，摻鋁樣品引入了新的缺陷，發光強度增強。
  4. The dependence of oxygen precipitation and induced - defects in heavily as - doped silicon on heat treatment process was studied by annealing and ig process, chemical etching, scanning electron micrograph ( sem ) and transmission electron microscopy ( tem ). a developed ig technique was suggested and the mechanism of the influence of as on oxygen precipitation formation in heavily as - doped silicon was discussed

    本文通過化學腐蝕、光學顯微鏡、掃描電鏡（ sem ） 、透射電境（ tem ）等分析技術，對重摻砷硅單晶在單步退火工藝和內吸雜退火工藝中氧沉澱及誘生缺陷的形態，形核與熱處理溫度、時間的關系等進行了研究。
  5. Investigation of residual donor defects in undoped and fe - doped lec inp

    非摻及摻鐵磷化銦中的殘留施主缺陷
  6. The experimental results showed that high density of oxygen precipitation and induced - defects were formed after annealing of wafers at moderate and high temperatures

    重摻砷硅單晶在中高溫退火時形成密度較高的氧沉澱及誘生缺陷。
  7. Abstract : the defects such as inclusion, splitting, dislocation and dendrite in the pbxla1 - x ( zry tiz sn1 - y - z ) o3 ( plzst ) single crystal grown from pbo - pbf2 flux by the slow cooling self - seeding technique were discussed in this paper. the forming mechanism of these defects were analyzed and some measures to eliminate the defects were proposed

    文摘:本文介紹了助熔劑緩慢降溫自發成核法生長的稀土摻雜鋯鈦錫酸鉛鑭（ plzst ）晶體中出現的幾種缺陷：包裹體、開裂、位錯、枝晶，分析了這些缺陷的形成機理並提出了減少和消除這些缺陷的一些措施。
  8. A modified ig process was suggested, through which a wider denuded - zone ( dz ) on the surface of wafers and higher density of oxygen precipitation in silicon bulk were obtained

    使用改進的內吸除工藝，在重摻砷矽片表面形成了較寬的清潔區，體內形成了較高密度的氧沉澱和誘生缺陷。
  9. In the need of adulterating target materials with metal clusters as tracing materials, we calculated the cluster behavior of al materials in theory. the preliminary study was carried out in no more than 7 atoms, considering the much time in calculation and limitation of theory model gaussian98 program, the b3lyp method and the 6 - 311 + g * basis function were used in the calculation

    由於靶材料摻入金屬團簇示蹤材料的需要，我們對鋁材料的團簇行為進行了理論計算，考慮到計算量和理論模型的缺陷，初步研究是在7個原子以內進行的。
  10. In this thesis, three systems, namely, perfect and defect sno _ 2 ( 110 ) surfaces, ti and ru - doped surfaces and the adsorptions of small molecules on above perfect surfaces have been studied in details by using the first - principles method with the combination of pseudopotential plane - wave and atomic basis sets. the structural stability, surface states and the surface chemistry of undoped and metal doped sno _ 2 ( 110 ) surfaces have been discussed, which can provide the theoretical rules to improve the surface properties of this special functional material

    為了深入了解sno _ 2表面的電子結構本質及其化學反應性質，本論文採用贗勢平面波和原子軌道基組相結合的第一性原理方法，詳細考察了三種類型體系，即sno _ 2 （ 110 ）完整和缺陷表面、 ti和ru摻雜表面、以及典型小分子在上述完整表面的吸附，揭示了sno _ 2 （ 110 ）及其金屬摻雜表面的構型穩定性、表面態及其對表面化學反應性的影響，為該類型表面功能材料的改性提供理論依據。
  11. The band was previously associated with f - type color centers and v - type color centers, as analyzed in x - ray irradiated ysz sample. however, the absorption band observed in our experiments has a shift towards the longer wavelength ( red shift ) as comparing with that in the x - ray or neutron irradiated ysz spectra. this shift may mainly due to large local distortions near the f - type centers and the v - type centers and the presence of multiple color centers

    本文通過光吸收、光熒光、 tem 、 xps測試及trim96計算分別研究了不同注量xe ~ +注入ysz前後光學性能和缺陷形態變化，以及ni ~ +注入對不同摻雜單晶al _ 2o _ 3結構和光學性能的影響，得到以下結果： （ 1 ） ysz注量達到10 ~ （ 16 ） cm ~ （ - 2 ）時，開始出現由f型和v型色心重疊而產生的吸收帶，與x射線、中子輻照相比，重離子輻照產生了更為復雜的缺陷復合體而導致吸收峰紅移。
  12. Under the condition that the variance of temperature in the furnace was lower than 2. 5oc, the accuracy of temperature control was higher than 0. 2oc and the speed of temperature drop was 0. 2oc ~ 2oc, we grew doped - ktp crystals without obvious defects by immerged - seeded solution method

    在晶體生長爐溫場均勻性高於2 . 5oc 、控溫精度高於0 . 2oc 、降溫速度為0 . 2oc ~ 2oc的條件下，採用浸沒籽晶緩慢降溫法生長出宏觀無明顯缺陷的摻質ktp晶體。
  13. By measuring the ultraviolet - light - induced absorption coefficeint change, we believed that the ultraviolet - light induced absorption changes were ascribed to the generation of the small polarons o ( superscript - ) under the illumination of uv lights

    通過對不同組份摻鎂鈮酸鋰晶體紫外光致吸收的動態暗衰減過程的測量，我們認為摻鎂鈮酸鋰晶體中紫外光致吸收的淺能級缺陷中心是o （上標- ）小極化子。
  14. It is found that the pl spectra of al - si - sio2 films are composed of 3 bands located at about 370nm, 410nm, and 510nm, respectively. the peak position changes little with the different amount of al, while the intensity of the pl peak changes

    Ple結果表明， 37onm和410nm的pl ，峰與樣品中的氧空位缺陷有關，而510nm的pl峰則是由於鋁的摻入改變了樣品中的缺陷狀態所致，是al 、 si 、 o共同而復雜的作用結果。
  15. As for the pl mechanism, except the red band, the rest are all originated from luminescence defects related to impurity, and the luminescence centers are affected by configuration of impurities, while the red emitting band may attribute to the quantum confinement effect of nano - si, but will also rely on its interface characteristic

    就發光機制而言，除紅光寬帶外，均起源於氧、氮摻雜引起的缺陷發光中心，發光中心受雜質組態影響，紅光寬帶可能聯繫到量子限制效應，同時還依賴于界面特性。
  16. The distribution coefficient of re3 + ( nd3 + and yb3 ) ， the refractive index and the crystal lattice were tested. through the measured data of absorption spectrum, fluorescence spectrum and fluorescence lifetime, the spectral characteristic parameters of ( nd3 +, yb3 + ) : yp0. 1v0. 9o4 crystals were calculated and contrasted, and the advandages of them have been showed

    通過測試各晶體的吸收光譜、熒光光譜和熒光壽命，分析了摻不同濃度nd3 + 、 yb3 +離子激光晶體的光譜特性，對比研究了以yv0 . 9p0 . 1o4作為基質晶體所具有的優越性和缺陷。
  17. We consider that the complexes of bmon ( m, n > 1 ) or the point defects induced by heavily boron doping may be involved in the nucleation of oxygen precipitates at high temperature range of crystal cooling. therefore it is reasonably deduced that the density of voids in hb cz silicon increases and the size of voids decreases due to the reduction of vacancy concentration as a result of heavy boron - doping enhanced oxygen precipitation prior to the void formation

    在實驗事實的基礎上，我們認為在重摻硼硅單晶生長過程中， bmon （ m ， n 1 ）復合體或摻b引起的點缺陷能在晶體冷卻過程中的較高溫度階段形成，且在隨后的退火過程中能穩定存在，作為氧沉澱形核的核心，從而促進了氧沉澱，減小了大直徑硅單晶中void缺陷的尺寸，增加其密度。
  18. Heavily as - doped silicon substrates are adopted by many device manufactories because of higher as - doping density. therefore, quantitative determination of oxygen precipitation and induced - defects in heavily as - doped silicon is important to the realization of ig

    重摻砷硅襯底片正日益受到器件廠家的青睞，所以研究重摻砷硅單晶中的氧沉澱及誘生缺陷對實現重摻襯底的內吸除有重大意義。
  19. For the substrate of heavily boron doped wafer, it has been proved that oxygen concentration is increased and oxygen precipitation is enhanced by hb ( heavily boron - doping ) during crystal growth, which is beneficial for ig and therefore improve the yield of ulsi

    另一方面，在相同的晶體生長條件下，重摻硼硅單晶氧含量升高，氧沉澱被增強，能形成有效吸雜點，提高矽片機械強度，抑制void缺陷，有利於提高ulsi的成品率。
  20. When a mutually doped transitional layer is introduced, no matter it is added to the interspace of electron transport layer and hole transport layer or to the interspace of the hole transport layer and hole inject layer, it can reduce the defects of the interface and result in the increase of brightness and the decrease of the operating voltage obviously

    我們在器件中引入了互摻過渡層結構，發現不管在電子傳輸層和空穴傳輸層之間，還是在空穴傳輸層和空穴注入層之間採用這樣的摻雜結構，都能夠有效減少有機層間的界面缺陷態，明顯提高了器件的亮度，降低了器件的工作電壓。
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