放大管 的英文怎麼說
中文拼音 [fàngdàguǎn]
放大管
英文
amplifier tube-
We may conclude that transistors will be used wherever efficient amplification required within a small space.
我們可以得出結論，凡是在小體積里需要有效放大的場合，都要採用晶體管。The transistor is an amplifier.
晶體管是一個放大器。With the purpose that people in countryside and rural area can listen to the sounds of communist party and chinese government, “ xi xin project ” has been carried out state general bureau of the radio and television and set up tens of 500kw sw radio transmitters, ten of them were installed, whom were th558 with find power amplifier, a kind of ultrahigh power mental - ceramic tetrode from french thomson company
為使我國廣大農村和邊遠山區群眾能聽到黨和政府的聲音，國家廣播電視總局組織實施了「西新工程」 ，部署了數十部500kw短波廣播發射機，其中十部的末級功率放大管採用法國湯姆遜（ thomson ）公司生產的th558超大功率金屬陶瓷四極管。Measurement of the electrical properties of microwave tubes. part 9 : crossed - field amplifier tubes
微波管電性能的測量.第9部分:正交場放大管Measuring methods of crossed field amplifier tubes
正交場放大管測試方法General specification for crossed field amplifiers
正交場放大管總規范It is shown that neglecting the gate - drain capacitance of the mosfet would lead to an overestimation of the optimum device width in the cmos source degenerated lna
本文證明了在cmos源端degeneration結構的低噪聲放大器中，忽略場效應管的柵漏電容將造成對放大管的最優柵寬估計過大。As the great reform and progress in a lot of techniques have been made in the new generation of semiconductor high - frequency power amplifier, valve power amplifiers are replacing by complete solid - state high - frequency linear power amplifiers gradually
隨著新一代半導體高頻功率放大管的一些突破性變革和多種技術的推陳出新，電真空管功率放大器正在被全固態高頻線性功率放大器逐步取代。Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da1162
電子元器件詳細規范. 3da1162型硅npn高頻放大管殼額定的雙極型晶體管Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da1722
電子元器件詳細規范. 3da1722型硅npn高頻放大管殼額定的雙極型晶體管Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da 2688
電子元器件詳細規范. 3da2688型硅npn高頻放大管殼額定的雙極型晶體管Semiconductor devices - discrete devices. part 7 : bipolar transistors. section four - blank detail specification for case - rated bipolar transistors for high - frequency amplification
半導體器件分立器件第7部分:雙極型晶體管第四篇高頻放大管殼額定雙極型晶體管空白詳細規范The dynamic experiment was tried. the maximal output power, which can be achieved, is 420kw. although there is a distance to the goal of 500kw output power, it still is the maximal power amplification broadcast tube on final stage in our nation
該樣管上整機做動態試驗時，在整機電壓不變的情況下，輸出功率為420kw ，盡管與輸出功率500kw的研製目標尚有一定差距，但也是我國目前輸出功率最大的末級功率放大管。Bidematron beam injection distributed emission magnetron amplifier
電子束注入分佈發射磁控放大管Measurements of the electrical properties of transmitting tubes - measuring methods of dual tone inter - modulation distortion of linear amplifier tubes
發射管電性能測試方法線性放大管雙音互調失真的測試方法Voltage amplifying tube
電壓放大管Detail specification for electronic components. case rated bipolar transistor for silicon pnp low - frequency amplification for type 3cd 507
電子元器件詳細規范. 3cd507型硅pnp低頻放大管殼額定的雙極型晶體管A new type of x - band high power microwave source - the resonator cerenkov oscillator - tapered amplifier tube ( rco - tat ) is put forward for the first time in the present paper. the proposed high power microwave device is based on a comprehensive investigation of related research work in the world and is in agreement with the demands to the development of practical high power microwave sources
在較全面調研和認真分析高功率慢波器件發展趨勢的基礎上，結合返波振蕩器等切侖科夫器件和漸變錐形結構微波器件的特點，提出了一種新型x波段高功率微波發生器?低磁場諧振腔切侖科夫振蕩器?錐形放大管（ rco - tat ） 。Detail specification for electronic components. case rated bipolar transistor for silicon npn low - frequency amplification for type 3dd 313
電子元器件詳細規范. 3dd 313型硅npn低頻放大管殼額定的雙極型晶體管Blank detail specification for case - rated bipolar transistors for low - frequency amplification
低頻放大管殼額定的雙極型晶體管空白詳細規范分享友人