晶片平整 的英文怎麼說

中文拼音 [jīngpiānpíngzhěng]
晶片平整 英文
wafer leveling
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 片 : 片構詞成分。
  • 平 : Ⅰ形容詞1 （沒有高低凹凸 不頃斜） flat; level; even; smooth 2 （高度相同; 不相上下） on the same l...
  • 整 : Ⅰ形容詞1 （全部在內; 完整） whole; all; complete 2 （整齊） neat; tidy; orderly Ⅱ動詞1 （整理; 整...
  • 晶片 : chip; crystal plate; wafer
  1. The quality of buffer layer and thin films was analyzed by afm, xrd, rheed and xps respectively. the effect of the experimental parameters such as carbonization time, working pressure, c source gas flow rate, carbonization temperature, different carbonization gas and substrate on the carbonization process was studied firstly. it was observed that the size of particles was increased with the increase of carbonization time and the rms was opposite, but the trend was reduced while the carbonization time was long enough ; the size of particles was increased with the increase of working pressure too, and choosing a proper working pressure could get a smooth surface ; the size of particles was unobviously changed while the gas flow rate was low, but it was notability increased with the increase of gas flow rate while the gas flow rate was high enough, and a smooth surface could be also obtained by choosing a proper gas flow rate ; with the increase of carbonization temperature, the size of particles was increased, the rms is decreased and a good single - crystalline carbonization layer could be obtained, but a rough surface was formed at a excessive high temperature ; the rms of

    對于碳化工藝，側重研究了碳化時間、反應室氣壓、 c源氣體的流量、碳化溫度以及不同種類的c源氣體、基片取向等因素對碳化層質量的影響，研究結果表明:隨著碳化時間的增長，碳化層的晶粒尺寸隨之變大，表面粗糙度隨之降低，但當碳化到一定時間之後，碳化反應減緩，碳化層的晶粒尺寸以及表面粗糙度的變化幅度變小;碳化層的晶粒尺寸隨反應室氣壓的升高而變大，適中的反應室氣壓可得到表面比較平整的碳化層;在c源氣體的流量相對較小時，碳化層的晶粒尺寸隨氣體流量的變化不明顯，但當氣體流量增大到一定程度時，碳化層的晶粒尺寸隨氣體流量的增大而明顯變大，同時，適中的氣體流量得到的碳化層表面粗糙度較低;碳化溫度較低時，碳化層的晶粒取向不明顯，隨著碳化溫度的升高，碳化層的晶粒尺寸明顯變大，且有微弱的單晶取向出現，但取向較差，同時，適中的碳化溫度可得到表面平整的碳化層;相比于c _ 2h _ 2 ，以ch _ 4作為c源氣體時得到的碳化層表面平整得多;比起si （ 100 ） ，選用si （ 111 ）作為基片生長的碳化層的晶粒取向一致性明顯更好。
  2. Chemical - mechanical polish ( cmp ) - a process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. it is used during the fabrication process

    化學-機械拋光（ cmp ） -平圓晶光拋和整片的工藝，採用化學移除和機械拋。式方種兩光此工藝在前道工藝中使用。
  3. The sto, ybco and sto / ybco thin films were deposited on laalo3 ( 001 ) ( lao ) substrate by pulsed laser deposition ( pld ). the effects of deposition parameters, such as the substrate temperature, the of target - substrate distance, laser energy density, on the properties of the thin fillms were systematically studied. the surface morphology of the thin films was investigated by atomic force microscopy ( afm ) and scanning electron microscopy ( sem )

    採用脈沖激光沉積技術在laalo3 （ 001 ） （ lao ）基片上生長ybco 、 sto以及sto / ybco集成薄膜，系統研究了基片溫度、基片表面狀態、氧分壓、激光能量密度、脈沖重復頻率等工藝參數對薄膜表面性能、結晶情況的影響，優化了ybco 、 sto薄膜生長的工藝參數，運用afm 、 sem 、 xrd等分析手段表徵薄膜的微觀性能，分析結果表明：薄膜表面平整、結晶良好、 c軸織構。
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