晶粒尺寸增大 的英文怎麼說

中文拼音 [jīnglìchǐcùnzēngdà]
晶粒尺寸增大 英文
increase in grain size
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 粒 : Ⅰ名 （小圓珠形或小碎塊形物） small particles; grain; granule; pellet Ⅱ量詞（用於粒狀物）
  • 尺 : 尺名詞[音樂] （中國民族音樂音階上的一級 樂譜上用做記音符號 參看「工尺」） a note of the scale in ...
  • 寸 : Ⅰ量詞（長度單位） cun a unit of length （=1/3 decimetre）Ⅱ形容詞（極短或極小） very little; very ...
  1. For electrodeposition by dc methods, the metals deposite uninterrupted and the particles were also embeded uninterrupted into the coatings ; for electrodeposition by pc method, the particles with biggish volume were desorbed from the coatings and returned to the electrolyte again owing to the presence of pulse interval ; for electrodeposition by prc method, the particles carried positive charges are much more easy to desorb from the coatings owing to the effecf of reverse pulse current combined with pulse interval, in addition, the reverse pulse current also could dissovle the metals, further accelerates the desorption of particles, thus the particles size embeded in the coatings by prc method is the least

    直流電沉積時，基質金屬的沉積連續進行，粒子在電極表面不間斷嵌入鍍層;單脈沖電沉積由於脈沖間歇的存在使得具有較大體積的粒子會脫附，重新回到溶液中;採用周期換向脈沖時，反向脈沖電流使表面荷正電的較大的粒子更易從電極表面脫附，同時，反向脈沖電流對基質金屬的溶解作用，也會促進粒子的脫附，因此鍍層中復合粒子尺寸最小。隨著鍍層中粒子復合量的增加，三種鍍層的晶粒都明顯細化，說明al _ 2o _ 3的存在阻止了晶粒的長大，提高了電沉積過程中晶核的形成速率。
  2. The resistance of sample l # ( 44nm ) and sample 2 # ( 50nm ) rises rapidly from 25k and 45k respectively, and an inflexion appears at the temperature in the resistance - temperature curves. the same inflexion appears at 75k in the resistance - temperature curves

    晶粒尺寸為44nm和50nm的1 #和2 #樣品的電阻率分別在25k和45k附近開始隨溫度的升高快速增大，在曲線上出現拐點。
  3. The crystalline structure changes of pp induced by pan - milling were characterized by x - ray diffraction and raman spectroscopy. xrd analyses show that when pp was co - milled with uhmwpe, crystal transformation of pp occurred, its crystallinity and crystallite size decreased, whereas, only slight reduction of crystallinity and crystallite size were observed and no crystal transformation was found when pp was co - milled with wtr chips, and amorphization of pp was strongly enhanced by co - milling pp with iron

    採用x -射線衍射研究了聚丙烯碾磨粉碎過程微觀結構變化， uhmwpe存在下pp發生晶型轉變、結晶度降低和晶粒尺寸減小；彈性材料wtr抑制pp塑性變形，碾磨導致分子堆積有序區域膨脹，晶面間距增大，結晶度下降；剛性材料金屬鐵與pp產生強烈摩擦，加快晶粒細化，晶格破裂導致非晶化。
  4. The quality of buffer layer and thin films was analyzed by afm, xrd, rheed and xps respectively. the effect of the experimental parameters such as carbonization time, working pressure, c source gas flow rate, carbonization temperature, different carbonization gas and substrate on the carbonization process was studied firstly. it was observed that the size of particles was increased with the increase of carbonization time and the rms was opposite, but the trend was reduced while the carbonization time was long enough ; the size of particles was increased with the increase of working pressure too, and choosing a proper working pressure could get a smooth surface ; the size of particles was unobviously changed while the gas flow rate was low, but it was notability increased with the increase of gas flow rate while the gas flow rate was high enough, and a smooth surface could be also obtained by choosing a proper gas flow rate ; with the increase of carbonization temperature, the size of particles was increased, the rms is decreased and a good single - crystalline carbonization layer could be obtained, but a rough surface was formed at a excessive high temperature ; the rms of

    對于碳化工藝，側重研究了碳化時間、反應室氣壓、 c源氣體的流量、碳化溫度以及不同種類的c源氣體、基片取向等因素對碳化層質量的影響，研究結果表明:隨著碳化時間的增長，碳化層的晶粒尺寸隨之變大，表面粗糙度隨之降低，但當碳化到一定時間之後，碳化反應減緩，碳化層的晶粒尺寸以及表面粗糙度的變化幅度變小;碳化層的晶粒尺寸隨反應室氣壓的升高而變大，適中的反應室氣壓可得到表面比較平整的碳化層;在c源氣體的流量相對較小時，碳化層的晶粒尺寸隨氣體流量的變化不明顯，但當氣體流量增大到一定程度時，碳化層的晶粒尺寸隨氣體流量的增大而明顯變大，同時，適中的氣體流量得到的碳化層表面粗糙度較低;碳化溫度較低時，碳化層的晶粒取向不明顯，隨著碳化溫度的升高，碳化層的晶粒尺寸明顯變大，且有微弱的單晶取向出現，但取向較差，同時，適中的碳化溫度可得到表面平整的碳化層;相比于c _ 2h _ 2 ，以ch _ 4作為c源氣體時得到的碳化層表面平整得多;比起si （ 100 ） ，選用si （ 111 ）作為基片生長的碳化層的晶粒取向一致性明顯更好。
  5. Suitable polycrystalline znsxse1 - x film with zinc sulfide cubic structure and ( 111 ) preferred orientation that provided a good matching with the requirements of lclv were deposited on ito coated glass by mbe method. room temperature photo - responsivity measurements performed on these thin films show that

    相比于用zns和se為生長源制備的znsxsel x薄膜，採用zns和znse化合物為源材料的實驗方法制備出的薄膜性能更優良，其晶粒尺寸普遍增大，柱狀晶形更完整。
  6. After testing thermal conductivity ( k ), electrical conductivity ( ) and see - beck coefficient ( a ), the results demonstrate that for cosb3 nano - materials, with decreasing in grains size lattice thermal conductivity falls, electrical conductivity decreases and seebeck coefficient increases. thermoelectric performance figure ( zt ) cosbs nano - compound with grains size of 200nm has reached 0. 43

    通過對一系列不同晶粒尺寸cosb _ 3化合物的熱導率、電導率和seebeck系數的測定，討論了晶粒尺寸大小對結構納米化對熱導率、電導率和seebeck系數的影響，結果表明：隨著cosb _ 3化合物晶粒尺寸的減小，晶格熱導率_ l顯著降低，從而導致cosb _ 3化合物的熱導率的降低；電導率也有一定的降低；以及seebeck系數顯著增加。
  7. During depositing, the matrix temperature increases, the crystal grain grows and the grain size increases

    薄膜沉積過程中，基片溫度升高，晶粒生長，薄膜晶粒尺寸增大。
  8. Along with the doping content increases, the dielectric constant initially increased and then decreased. the dielectric loss was on the contrary. 4. bt _ 4 doped with bi _ 2o _ 3 or v2o5 got a lower sintering temperature. a babi4ti4o15 phase raised when bi _ 2o _ 3 was doped and the dielectric properties ruined

    3 . bst中摻雜zro _ 2 ，晶粒尺寸增大，摻雜量較大時會產生第二相bazro _ 3 ，介電常數隨摻雜量的增大呈現先增大后減小的趨勢，介電損耗則先減小后增大。
  9. The results of pure cu show ecap can produce bulk material of submicrometer level indeed. as the number of passes increases, the initial structure of pure cu has been refined largely. after six passes, i. e. the equivalent true strain of 4 ~ 5, the grain size gradually becomes stable and uniform

    對純銅室溫ecap晶粒超細化行為及組織穩定性的研究表明： ecap技術的確能制備出亞微米級的塊體材料，隨著ecap道次的增加，純銅的組織被大大細化， ecap六道次（即等效真應變4 5 ）后，晶粒尺寸趨于穩定，硬度基本飽和。
  10. A modified definition of polarization resistance calculated from the equivalent circuit of eis make its value dependent on the grain size. in anodic polarization test ( sweeing and stair - steps ), the maximum ( critical ) current density increases while the passivation potential and breakdown potential lowers with the reduction of the grain size. fegsem images showed the grain growth and pitting corrosion of the nc copper surface, uniform corrosion in the mc copper surface and the broken passivation layer in both surfaces

    在陽極極化實驗（包括掃描法和臺階法）中，致鈍電流雖晶粒尺寸減小而增大，而致鈍電位和擊穿電位都隨著晶粒細化而降低。 fegsem照片發現了納米晶銅的晶粒長大和孔蝕，微米晶銅表面的均勻腐蝕，和兩種銅表面破碎的鈍化膜。
  11. It is proved by quantitative analysis that with the content of titanium lower and tungsten higher in the alloy, the proportion of titanium to tungsten lowers little by little in the ( tiw ) c reforcement ; particles are smaller in size and more in quantity in 10vol % composites than in 20vol % one

    在前一部分的研究基礎之上，分析得出：在本實驗條件下，當熔體的熔煉溫度較低時，熔體中增強顆粒形成的數量少、尺寸大（黑心大） 、並有大量的共晶組織。
  12. The size of the zno nanocrystal grain was so little that the quantum confinement effect should be considered. that makes the band gap wide. atom transfer rate is affected by the substrate temperature, and the average size of the zno nano crystal grain increases with the increasing substrate temperature resulting in the red shift of pl emission position and the narrowness of pl fwhm

    低溫生長的氧化鋅晶粒小，考慮到量子限制效應，禁帶寬較大；襯底溫度影響吸附原子遷移能力，隨著溫度升高，晶粒的尺寸增大，分佈變的均勻，因而發光峰位隨著襯底溫度的升高而紅移，發光的半高寬變小。
  13. The flux of n2o greatly affected the film ' s microstructure. as the n2o flux was increased, the content of anatase decreased and rutile increased gradually. the size of rutile became smaller with increase of the flux of n2o

    摻雜劑n _ 2o的流量對薄膜的結構有很大影響，隨著流量的增大，銳鈦礦相tio _ 2逐漸向金紅石相轉變，金紅石晶體的顆粒尺寸也不斷減小。
  14. The resistance of the nano - bulk al increases with the increase of the temperature and decrease with the increase of the grain size

    在我們測定的納米金屬鋁材料中，電阻率隨溫度的升高而增大、隨晶粒度尺寸增大而減小。
  15. Blend in molten state make hdpe crystals small, crystallinity large, quantity of cb particle benefit to conductivity decreasing ; in solid state cb aggregate is sheltered with a insulate hdpe film, also cb structure will be broken down during blend ; all of these will make conductivity bad. but processing alds can lower this effect obviously. 3. the effect of crosslink is restricting the movement of molten polymer molecules

    為此筆者認為固相混合使hdpe晶粒尺寸變小，結晶度增大，使得異相成核的晶粒增多，參與導電的炭黑粒子數量減少：熔混卻使炭黑粒子表面被覆一層絕緣膜：這都將導致材料的導電性明顯變差，同時兩種混合還會造成炭黑結構的破壞，皆使得材料的導電性明顯變差。
  16. The size variation of annealed nanoparticles was studied with the treatment temperature. the result shows that, for the size of 11nm zns nanoparticles, they grow up dramatically when the treatment temperature exceeding 600, and have been 3 - 5 um when the treatment temperature increasing to 900

    藉助x射線衍射技術和掃描隧道電鏡等實驗手段，系統研究了zns納米晶經過退火處理后尺寸隨溫度的變化關系，給出了顆粒尺寸隨處理溫度急劇增大的溫度范圍，從能量的角度解釋了退火處理中顆粒長大的原因。
  17. The results show that the ma can accelerate the diffusion in solids. during the ma process, the size of grain in the sample sharply decreases to 65. 27nm after 30 minute milling and to 4. 14nm after 20 hour milling, while the microstrain of the grain increases firstly, reaching the maximum 0. 422 after 10 hour milling and then decreases

    通過試驗發現，機械合金化可以加速固態擴散，隨著球磨的進行，粉末晶粒尺寸急劇下降， 30分鐘后達到65 . 27納米， 20小時后達到4 . 14納米；微觀應變先增大， 10小時達到最大值0 . 422 ，隨后減小。
  18. The increase in average grain size of a polycrystalline material ; for most materials, an elevated - temperature heat treatment is necessary

    多晶體材料中晶粒尺寸的增大，對大多數材料來說，晶粒長大隻在升高溫度加熱的時候發生。
  19. After ten passes, the average grain size of the microstructure which including high angle boundaries is about lum. the vickers hardness increases rapidly after ecap, from 78. 7hv to 185. 3hv

    Ecap十道次時，晶粒尺寸在1 m左右，晶界為大角度晶界，硬度明顯增加，顯微硬度從原始態的78 . 7hv增加到185 . 3hv 。
  20. And generally speaking, the grain sizes were all less than 100nm. the average grain sizes of nd2fe14b and - fe reached a minimum of sizes after crystallization treatment ( temperature of crystallization : 650 ; heat preservation time : 5 hours )

    對球磨5小時的合金粉末進行晶化處理，可以發現，在晶化過程中，隨晶化溫度的增加晶粒尺寸逐漸長大，但總體來說，都在100nm以下。
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