晶粒襯度 的英文怎麼說
中文拼音 [jīnglìchèndù]
晶粒襯度
英文
grain contrast-
It was concluded that, the structure of ito thin films were influenced by many working parameters such as substrate temperature, oxygenous pressure and substrate and so on. it was indicated by sem spectra of zno thin films that the surface of the sample was leveled off, and the crystals were felsitic
結果表明，對于ito薄膜，薄膜的光電性能薄膜結構的擇優取向性和與襯底溫度、濺射氧氣壓等工藝參數有很大關系， ito薄膜的sem表明，樣品表面較平整，且晶粒也比較緻密。Coarse - grained impact resistant grades for mining, working of stones and rock, building, mineral oil industry, percussion and hammer drill tips, inserts for mining cutters, chisels, asphalt cutters, picks, inserts for concrete - working, hammer cheeks rolls, hot wire rolling, ball pressure dies, brake blocks
粗晶粒度的抗沖擊牌號，適用於采礦工業、採石、建築、石油鉆探工業、鉆頭和錘頭、礦刀的襯墊、鑿子、瀝青切刀、風鎬、混凝土製造的襯墊、錘子的滾軸、熱軋軋輥、子彈壓力沖模、剎車片。We have found the best ways to optimize the growth of quality zno films and got highly c - axis oriented zno films. the microstructures of the films were observed by afm. after analyzing the crystal structures, the crystal tropism and the surface conformation flatness, we found the result that the substrate temperature of 400 ? is ideal for silicon substrates, which conforms to the result of the structure analyse. by analyzing the magnetism of zno films, we found that the films appropriately doped with fe, co ions have magnetism at room temperature and their magnetism can be improved by doping other little cu ion, but it is not certain that the content of cu is higher, the film has more magnetism, so it has the best content of cu. moreover, the films which have best crystal structures may not have the best magnetism
我們採用原子力顯微鏡（ afm ）方法觀察薄膜的顯微結構，利用所得的圖象信息對薄膜的晶粒結構、晶粒取向、表面形態平整度等進行分析討論，認為400的襯底溫度對硅襯底薄膜是合適的，與結構分析的結果一致。通過對薄膜磁性能的分析和研究，我們得出一些有意義的結果：適量過渡金屬離子fe 、 co摻雜的zno薄膜，在室溫下具有鐵磁性，而在此基礎上摻入少量的cu離子能改善薄膜的磁性。摻cu量有個最佳值，而且結構最好的薄膜磁性不一定最好。The crystal grain boundary of v2o5 films was melted and disappeared as increasing the deposition temperature, and the crystalline v2o5 films can be obtained by deposition at > 300. these films showed excellent cathode and anodic electrochromic performance at different wavelength region
而襯底溫度升高促進薄膜晶體顆粒長大、熔結，晶粒邊界消失，在較高襯底溫度（ 300 400 ） ，得到連續的結晶性能良好的v _ 2o _ 5薄膜。By increasing the h2 dilution ratio, it is found that atomic hydrogen can selectively etch amorphous phase and stabilize crystalline phase. from the study on the distance from substrate to catalyzer, choosing a proper distance can ensure the gas fully decomposed, while a relatively low substrate temperature can cause the nanocrystalline particles to lose mobility and keep their sizes. the pre - carbonization process can enhance the nucleation density and make the growth of high quality nanocrystalline p - sic films much easier
實驗結果表明：隨著工作氣壓的減小，薄膜的晶粒尺寸有所減小；通過提高氫氣稀釋度，利用原子氫在成膜過程中起的刻蝕作用，可以穩定結晶相併去除雜相；選擇適當的熱絲距離能保證反應氣體充分分解，又使襯底具有較高的過冷度，是形成納米薄膜的重要條件；採用分步碳化法可以提高形核密度，有利於獲得高質量的納米- sic薄膜；襯底施加負偏壓可以明顯提高襯底表面的基團的活性，因負偏壓產生的離子轟擊還能造成高的表面缺陷密度，形成更多的形核位置。Determined by dsc. whereafter, the surface micro - morphology of both sides of tini sma thin film deposited on glass was investigated by atomic force microscope ( afm ), and the difference of morphology between the two sides is observed. it has been shown that, in the growing surface of sputtered tini film, the trend of grain to accumulating along the normal direction like a column is clearly observed, and the grain is very loose which resulted in more microcavities, but in the surface facing to glass substrate, grain is so compact that there are hardly microcavities
通過濺射法，在玻璃襯底上淀積了tini薄膜，並在600進行了真空退火， dsc法測得其馬氏體逆相變峰值溫度為75 ，利用原子力顯微鏡，對玻璃基tini形狀記憶合金薄膜的襯底面與生長面進行了表面微觀形貌分析，發現：生長面晶粒呈現出沿薄膜法線方向柱狀堆積的趨勢，晶粒緻密性差，微孔洞多；而襯底面晶粒緻密，幾乎沒有微孔洞存在。The effect of deposited condition, include substrate temperatures, different substrates and annealing on the structural properties of zno films has been studied in considerable detail. it is found that the optimal conditions to deposit zno are below : the substrate temperature of 450c, the substrate of sapphire. the sample on this condition is 0. 3491
通過分析襯底溫度、不同襯底和退火對樣品結構的影響，得到了樣品的最佳制備條件：襯底溫度450 、藍寶石襯底，此條件下制備的樣品具有高度（ 002 ）取向性， （ 002 ）衍射峰半高寬僅僅0 . 3491 ，原子力顯微鏡（ afm ）分析表明zno薄膜具有密集堆積的均勻柱狀晶粒。The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate
採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。The size of the zno nanocrystal grain was so little that the quantum confinement effect should be considered. that makes the band gap wide. atom transfer rate is affected by the substrate temperature, and the average size of the zno nano crystal grain increases with the increasing substrate temperature resulting in the red shift of pl emission position and the narrowness of pl fwhm
低溫生長的氧化鋅晶粒小，考慮到量子限制效應，禁帶寬較大；襯底溫度影響吸附原子遷移能力，隨著溫度升高，晶粒的尺寸增大，分佈變的均勻，因而發光峰位隨著襯底溫度的升高而紅移，發光的半高寬變小。Typical temperature is 800 - 1000 in cvd diamond process, while the high temperature limits its application in optical window and coating such as gaas, zns etc. low temperature can not only make diamond crystal nucleus finer, reduce surface roughness of diamond films and lessen light dispersion, but also eliminate thermal stress
化學氣相沉積金剛石膜過程中，襯底的典型溫度為800 1000 ，這么高的溫度限制了其作為gaas 、 zns等低熔點光學材料窗口和塗層的應用。低溫沉積金剛石膜不僅可以使晶粒細化，降低表面粗糙度，減小光的散射作用，而且可以消除熱應力。分享友人