晶粒成長 的英文怎麼說

中文拼音 [jīnglìchéngzhǎng]
晶粒成長 英文
crystal grain-growth
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 粒 : Ⅰ名 （小圓珠形或小碎塊形物） small particles; grain; granule; pellet Ⅱ量詞（用於粒狀物）
  • 成 : Ⅰ動詞1 （完成; 成功） accomplish; succeed 2 （成為; 變為） become; turn into 3 （成全） help comp...
  • 長 : 長Ⅰ形容詞1 （年紀較大） older; elder; senior 2 （排行最大） eldest; oldest Ⅱ名詞（領導人） chief;...
  1. When ph value < 0. 5, faster deposition rate, faster growth rate of crystallizing nucleus, which causes bigger crystalline granularity and bad surface quality of the deposits such as crassitude or darkling

    Ph 0 . 5時，沉積速度過快，晶核成長速度快，晶粒粒度較大，鍍層表面粗糙、發黑，表面質量差。
  2. For electrodeposition by dc methods, the metals deposite uninterrupted and the particles were also embeded uninterrupted into the coatings ; for electrodeposition by pc method, the particles with biggish volume were desorbed from the coatings and returned to the electrolyte again owing to the presence of pulse interval ; for electrodeposition by prc method, the particles carried positive charges are much more easy to desorb from the coatings owing to the effecf of reverse pulse current combined with pulse interval, in addition, the reverse pulse current also could dissovle the metals, further accelerates the desorption of particles, thus the particles size embeded in the coatings by prc method is the least

    直流電沉積時，基質金屬的沉積連續進行，粒子在電極表面不間斷嵌入鍍層;單脈沖電沉積由於脈沖間歇的存在使得具有較大體積的粒子會脫附，重新回到溶液中;採用周期換向脈沖時，反向脈沖電流使表面荷正電的較大的粒子更易從電極表面脫附，同時，反向脈沖電流對基質金屬的溶解作用，也會促進粒子的脫附，因此鍍層中復合粒子尺寸最小。隨著鍍層中粒子復合量的增加，三種鍍層的晶粒都明顯細化，說明al _ 2o _ 3的存在阻止了晶粒的長大，提高了電沉積過程中晶核的形成速率。
  3. The resultant grains tend also to be elongated along the direction of deformation.

    所形成的晶粒沿變形方向被拉長。
  4. But the grain growth, grain semiconduction and grain boundary insulation were influenced by many factors, such as the type and contents of dopants, sintering temperature and so on. therefore, in this thesis the effect of the restore sintering temperature, the oxygenize temperature, the donor and acceptor dopant on the dielectric and varistor properties of devices were studied. with sem, the microstructure of srtio3 - based double function ceramic was analyzed

    而晶粒生長、晶粒半導化和晶界絕緣化受到多種因素的影響，諸如雜質的種類和含量、燒成溫度等，因此本論文研究了還原燒成溫度、中溫氧化溫度、施主和受主摻雜等對srtio _ 3基陶瓷的壓敏和介電性能的影響，並藉助于sem分析對srtio _ 3基雙功能陶瓷的微觀結構進行了分析。
  5. For the ceramic materials, the effects of additives such as pbo, b2o3, co2o3, mno2, cr2o3, sb2o3 on the electrical properties of bismuth - free zno - glass varistor were studied. the glass phase formed mainly by pbo and b2o3 during sintering process could decrease the sintering temperature, improve grain uniform growth and inhibit grain second growth. nonlinear property could be improved by properly adding co2o3, mno2, and cr2o3

    對瓷料而言，系統研究了非bi系zno -玻璃料配方體系中pbo 、 b2o3 、 co2o3 、 mno2 、 cr2o3 、 sb2o3等添加劑對壓敏電阻電性能的影響規律，其中， pbo 、 b2o3在燒結過程中形成的玻璃相，可降低燒結溫度，促進晶粒均勻生長，抑制晶粒二次長大， co2o3 、 mno2 、 cr2o3做為非線性添加劑，適量添加可提高樣品的非線性， sb2o3做為改性添加劑，在燒結過程形成的尖晶石相可細化晶粒，抑制晶粒二次生長，改善樣品的綜合電性能。
  6. When sn2 + concentration in the bath is lower, sn2 + activity is not enough causes slow deposition rate and slow growth rate of crystallizing nucleus, so crystalline granularity deposited is smaller ; when sn2 + concentration in the bath is higher, the dispersive ability of the bath decreases and the surface quality of the deposits sets worse

    鍍液中sn ~ （ 2 + ）濃度較低時，離子活度不夠，沉積速度慢，晶核成長速度慢，使沉積的晶粒粒度較小； sn ~ （ 2 + ）濃度過高，鍍液分散能力降低，使鍍層的表面質量下降。
  7. Begin with the comparation of two widely used methods producing the strontium titanate, the oxalate decomposition method shows its advantage hi the microstructure and future performance. the effect of caco3 is studied, and so is the effect of the donor dopant, such as nb2o5, y2o3 and la2o3. the dopant of tio2 is also considered, which involve ti / sr ratio, sintering temperature, oxygen partial pressure, donor dopant, grain growth and future electric performance

    從對比草酸鹽分解法和固相合成法這兩種制備srtio _ 3主晶相的方法開始，在予合成料的制備過程中分析了施主nb _ 2o _ 5 、 y _ 2o _ 3 、 la _ 2o _ 3以及caco _ 3所產生的影響；在tio _ 2摻雜的問題上，綜合考慮了ti / sr比、燒結溫度、氧分壓、施主摻雜、晶粒的微觀生長與成瓷后的元件宏觀電性能等之間的相互關系。
  8. The process parameters of preparing nanosized titanium dioxide powders were systematically studied by electrochemical synthesis experiments at room temperature. the rutile phase and anatase phase powders were obtained in the sizes of 9. 7nm and 9. 2nm respectively, and the complete crystal powders were formed after calcined at 400 for two hours. in the process of experiments it was observed that the low current density resulted in rutile phase powders, while the addition of little amount of ions of sulfate promoted the formation of anatase phase powders

    在本實驗條件下，小的電流密度有利於金紅石相的生成，而少量硫酸根離子的引入對生成銳鈦礦相粉體有利，調整電流密度大小和引入硫酸根離子的量，可以得金紅石型和銳鈦礦型的混合混體；研究無定型粉體，銳鈦礦相粉體以及金紅石型粉體隨溫度的粒徑變化情況時發現，粉體在400以前晶粒長大相對緩慢， 400以後晶粒粗化現象嚴重。
  9. Sem, transmission electron microscopy ( tem ), x - ray energy - dispersion analysis ( edax ), xrd, electron diffraction ( ed ) and high - resolution electron microscopy ( hrem ) were used to investigate the morphology, atomic composition and crystal structure of the nanowires. the hexagonal cdse nanowires with single crystal structure have been obtained in dmso under 140. ( 3 ) semiconductor te and cdte nanowires embedded in aao templates were fabricated for the first time by dc < wp = 7 > electrodeposition in ethylene glycol

    Sem 、 tem 、 edax 、 xrd 、 ed 、 hrem分析的結果表明，所得cdse納米線為六方晶型，晶體的（ 001 ）晶面沿平行於基底的方向擇優生長，且隨沉積溫度的降低，這種擇優生長的趨勢越來越強；納米線晶體在生長時，由於受aao模板孔徑的限制，形成c軸方向拉長的晶粒，其長徑比達5 1以上；晶體的大小和完善程度隨沉積溫度的降低而增大， 185沉積得到多晶六方cdse納米線，而140沉積時可得到六方cdse單晶納米線。
  10. The microwave magnetic sintering can not only lower the sintering temperature and shorten the sintering time, but also decrease the micro - grain size of magnets and make intergranular phase and grain boundary of main phase distributed well. the abnormal grain growth was found in conventional sintered ndfeb magnets, which may be due to the greater particle size and uneven distribution of powder, and higher sintering temperature and longer sintering time. of course, the abnormal grain growth would deteriorate the magnetic properties

    微波磁場燒結的不但降低燒結溫度，縮短燒結時間，而且使磁體整體加熱，受熱更均勻，因而磁體晶粒更細小，並且主相晶粒邊界趨于規則化，晶間相的分佈更均勻；在常規燒結的磁體中則出現了晶粒異常長大現象，造成這一現象的原因，一方面可能是燒結溫度過高或燒結時間過長，另一方面可能是磨製的粉體均勻性較差，存在的大顆粒被許多細小顆粒包圍，在燒結過程中，大顆粒不斷吞併小顆粒，逐漸長大，而異常長大的晶粒自然會導致磁體性能的惡化。
  11. We apply the system to the ultra - fine grain steel welding, the simulated mean grain size in cghaz agreed well with the corresponding independent experimental data. in this paper, three factors influencing the grain growth, the steep temperature gradient in haz. the grain boundary liquid and the precipitates particle, were studied specially using mc technique

    研究表明溫度梯度造成的「熱釘扎」現象和晶界液化現象都對靠近熔合線附近的晶粒長大有明顯的阻礙作用，對最終的晶粒大小分佈有重要的影響：而800mpa超細晶粒鑰中的tin粒子山于溶解溫度高，抑制奧氏體晶粒長大的效果十分顯著。
  12. The p - phase transformation was completed after 20 or 24 hours annealing at 800 ? for all hot - pressed samples

    所有試樣在800退火20h或者24h后均完成了相轉變，其間沒有發生明顯的晶粒長大。
  13. Tem was used to consecutively investigate the size and appearance of dibasic lead phosphite in the reaction process. it found that nanocrystal grain of lead oxide phosphite hydrate had favorite direction in the mlps method, many nanocrystal grain in near area would aggregate and assembled as nanowire, the diameter of the nanowire was about a crystal grain size and the length of nanowire could reach hundreds of nanometers, then they would gather to needle or bar like particles

    利用tem對二鹽基亞磷酸鉛在反應過程中粒子的大小、形貌進行跟蹤觀察，並記錄下三個時間下的微粒照片，發現用微液相合成法制備的二鹽基亞磷酸鉛晶粒在生長團聚時存在取向規律，同一區域的晶粒會長成一條納米線，直徑有一個晶粒的大小，長度可以達到幾百nm 。
  14. The measure of grains " comminution is brought forward to improve plasticity at room temperature. the key of micro - crystal ' s production is that the time of sample ' s being at high temperature is shorter. the process of crystal ' s growing up will be restrained

    提出了通過細化晶粒來提高室溫塑性的措施，指出了細化晶粒的關鍵是在合成過程中使坯料處在高溫狀態的時間短，以抑制晶粒的長大過程。
  15. The surfactant can prevent the producing of iron carbide and control the size of crystal grains

    表面活性劑的加入可以避免碳化物的生成和控制晶粒的長大。
  16. Higher bath temperature and more deposition time, faster deposition rate, faster growth rate of crystallizing nucleus, which causes bigger crystalline granularity ; ph value and bath temperature are also key factors affecting the size of crystalline granulatrity

    鍍液溫度越高、時間越長，沉積速度越快，晶核成長的速度就越快，沉積晶粒的粒度也越大。鍍液ph值和sn ~ （ 2 + ）離子濃度也是影響晶粒粒度大小的關鍵因素。
  17. The templated grain growth ( tgg ) process was used to texture pmn - pt. the tgg process requires the template to have a strong epitaxial relationship to the crystal structure of the matrix composition

    模板晶粒生長過程（ templatedgraingrowth ）可以使多晶材料形成擇優取向的排列（即織構化） 。
  18. Changing the grading of sic particles not only affects the strength and pile density, but also modifies the phase compositions and microstructure of the material. with the reducing of sic particles, the strength of the material increases obviously. the nitrification scheme has the greatest influence on phase compositions and microstructure " of si3n4 ( si2on2 ) - sic, after two continuous nitrification reacting peak and short - time high - temperature treating, the best properties can be obtained ; and the residual strength of the composite is much higher after the thermal shock resistance test, which shows that the material possesses excellent thermal shock resistance

    本論文較全面地探討促進強度和顯微結構良好的si _ 3n _ 4 （ si _ 2on _ 2 ）結合相的實驗條件，實驗數據顯示：引入適量的燒結助劑能夠促進si _ 3n _ 4 （ si _ 2on _ 2 ）的生成和晶粒的長大，而過量時，其促進作用反而下降；隨著si粉加入量增加，生成的結合相明顯增多，復合材料的性能顯著提高；改變sic顆粒級配不僅影響復合材料的強度與堆積密度，而且對復合材料的物相與顯微結構也有影響，隨著顆粒逐漸細化，材料的強度有較大的提高；對復合材料的強度、物相與顯微結構影響最大的是氮化制度，經過兩個氮化高峰連續的反應和短時間的高溫后處理得到的復合材料性能最好；通過抗熱震性能實驗后復合材料的殘余強度較高，顯示出較好的抗熱震性能。
  19. Grain size, the semiconducting of grain and the insulating of grain boundary were keys to the single - fired process of preparation of srtio3 - based double function ceramic, and affected directly the dielectric and varistor properties

    在srtio _ 3基雙功能陶瓷的一次燒成制備過程中，最關鍵的是晶粒生長、晶粒半導化和晶界絕緣化，它們直接影響陶瓷的壓敏和介電性能。
  20. The effects of particle type, liquid spraying rate, liquid concentration, fluidizing gas velocity, vibrated intensity, nozzle position and atomization air pressure on the growth of particles have been analyzed and discussed

    著重研究了晶種類別、料液流量、料液濃度、流化氣速、振動強度、噴嘴高度、霧化氣壓力等因素對顆粒成長的影響。
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