晶體參數 的英文怎麼說
中文拼音 [jīngtǐshēnshǔ]
晶體參數
英文
crystal parameter-
The waves should be sheared waves for the anisotropic aeo device and longitudinal waves for the isotropic aeo device. geometrical relationships of anisotropic acousto - optic effect in ln crystal and kdp crystals are studied by tangent - match condition. curves of incident angle vs. abaxial angle, diffractive angle vs. abaxial angle, extreme frequency vs. abaxial angle and acousto - optic merit vs. incident angle vs. abaxial angle are systematically gained and the design parameters are also calculated
利用相切-匹配條件法研究了鈮酸鋰晶體及kdp晶體的反常聲光互作用幾何關系,系統地得到了以離軸角為自變量的各參數的計算公式及相應的關系曲線,通過數值分析方法給出了聲光優值隨中心頻率的變化曲線並給出了器件的設計參數。The effects of main process factors such as feeding mode, reaction ph values, and ratio of ammonia and nickel ion, reaction time, agitation, reaction temperature and aging et al on the crystallization course and physical properties of nickel hydroxide were studied in detail. at last, we acquired the optimal preparation parameters, the spherical nickel hydroxide with high tap density and crystalloid degree, perfect flow ability were prepared
在研究加料方式,氨水的加入量,反應時間、體系ph值、反應溫度、攪拌、陳化等主要工藝條件對ni ( oh ) _ 2結晶過程和物理性能影響的基礎上,確定了較優的工藝參數,制備出了堆積密度和結晶緻密程度較高、流動性較好的球形ni ( oh ) _ 2 。Using jgp560c magnetron sputtering equipment, cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power, gas flow, vacuum air pressure, magnetoelectricity power and substrate temperature on deposition rate of film, discovered that dc sputtering power is the most key factor influencing the deposition rate
在jgp560c型超高真空多功能磁控濺射鍍膜機上,採用直流磁控濺射法在cdznte晶體上制備出cu ag合金薄膜,揭示了氣體流量、直流濺射功率、勵磁電源功率、工作氣壓和襯底溫度等工藝參數對沉積速率的影響規律。結果表明濺射功率對沉積速率的影響最大,隨濺射功率的增大沉積速率快速增大。Piezoelectric sensors, commonly known as quartz crystal microbalance, are sensitive to multiple signals such as the surface mass and the viscosity, density, dielectric effect, conductivity of the liquid
壓電傳感技術則是一種比較成熟的傳感技術,可響應石英晶體表面的質量變化及溶液粘度、密度、介電常數、電導率等參數。Measurement of quartz crystal unit parameters - phase offset method for measurement of motional capacitance of quartz crystal units
石英晶體元件參數的測定.第2部分:用相位偏離法測量石英晶體單元的動態電容The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward
介紹了限制寬帶放大器頻帶寬度的因素,通過分析mosfet的本徵參數、寄生參數對頻率特性的影響,提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法;分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響,根據應用於雙極晶體管電路的跨導線性原理,提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器,獲得了良好的頻率響應。The determination of human thymidine kinase ( htk ) in human serum, which is a key indicator of cancers can give information for the diagnosis and treatment of the malign diseases. the protein a layer was first self - assembled onto the gold electrode surfaces of quartz crystals, the monoclonal antibodies were then orientedly immobilized through the specific binding between the fc terminals of the antibodies and the self - assembled protein a. with this sensor, the affinity constant of antigen - antibody binding was estimated to be 1. 85 106 l / mol according to the scatchard ’ s plotting method, which proved the high bioactivity of antibody. finally, an amplified piezoelectric immunosensor was designed to determine the htk in
實驗中將蛋白a吸附於鍍金壓電石英晶體電極表面,用於定向固定htk單克隆抗體,成功研製了檢測htk的壓電石英晶體傳感器,並基於標準scatchard繪圖法,計算出免疫反應的親和常數為1 . 85 106l / mol ,證明該單克隆抗體具有較高的免疫活性;同時基於酶催化沉澱技術,設計了的檢測htk的質量放大壓電石英晶體傳感器,該傳感器可在0 . 1 - 10ng范圍內對htk進行定量檢測,應用此傳感器成功地對5種癌癥病人血清中htk的濃度進行了測定,實驗結果為癌癥的臨床診斷與治療提供了參考。Treatment of the spinel limn2o4 with aqueous acid produces - mno2. x - ray diffraction and atomic absorption spectroscopy show that - mno2 with lattice constant of 0. 806nm preserves the structural framework of the limn2o4 and the conversion of limn2o4 to - mno2 results in some contraction of the lattice
利用limn2o4與稀酸作用制得- mno2 ,經xrd 、原子吸收光譜( aas )分析表明- mno2仍然保持了尖晶石的面心立方點陣,晶胞參數0 . 806nm ; limn2o4經過酸處理、鋰離子脫出后晶胞體積發生了收縮。This thesis was divided into eight chapters, and the main results and innovations obtained here can be summarized as follows : ( 1 ) the physics model of tsrs in frequency conversion crystals has been built up firstly. based on quantum - mechanical viewpoints and the following physical processes and parameters : the two - photo interaction of light with matter, paraxial diffraction of stokes, langevin noise sources, reflection at the faces and the edges of crystals, gain coefficient, beam aperture, pulse width and fluence of 3, the physics model of tsrs in kdp and kdp crystals acting as high - fluence frequency convector and the paraxial operator maxwell - bloch - langevin equations have been built up
全文共分八章,取得的主要成果及創新點如下: ( 1 )首次建立了諧波轉換晶體的tsrs物理模型本文根據量子力學原理,在考慮如下物理過程和參量的基礎上:光與物質的雙光子相互作用; stokes光的傍軸衍射; langevin (郎茲萬)噪聲源;晶體表面反射和端面反射;增益系數、光束口徑、脈寬和三倍頻光能量密度,推導出高通量激光在kdp和kd ~ * p諧波轉換晶體中的tsrs物理模型和空間上的近軸算符maxwell - bloch - langevin方程組。Here the conductance, carrier concentration and hall mobility ect parameters of er doped cdte films have been given. using seto model, we calculate the grain - boundary barrier of er doped cdte films and analyze the varing dose influence on the grain - boundary resistance
討論了不同er離子注入量對硅基底上沉積的cdte薄膜結構和光電性能的影響,並具體給出了摻雜cdte多晶薄膜的電導、載流子濃度及遷移率等參數值。The trained neural network model can be used to solve a variety of problems emerged in rf / microwave circuit design, such as in microwave circuit cad, the established model structure can be used to characterize the nonlinear behavior of microwave circuits
如用於微波電路cad ,可用所建立的模型結構來描述這么一類微波電路的非線性行為特徵;如用於微波電路設計,則可進行如共面波導、晶體管、傳輸線、濾波器和放大器等的設計;如用於微波電路優化,則可用所建立的電路模型優化電路參數,進行阻抗匹配等。The connection between the torque and the polarized charges is established. on the base of mathematical model of torsional effect, using multivariate unrestrained nonlinear optimization method, we research cutting angles and parameters of crosssection to get best torsional sensitivity
在建立石英晶體扭轉效應模型的基礎上,應用多變量、無約束非線性優化方法對于晶體切型、截面形狀等參數進行了優化,以獲得最佳扭轉靈敏度。The design and analysis of vertical pnp transistor was accomplished through the relationship between carriers lifetime of epitaxy layer and current gain, rate of surface combination and leakage current, carriers lifetime of epitaxy layer and switch speed
從外延層載流子壽命與晶體管放大倍數,表面復合率與漏電流,以及外延層載流子壽命與晶體管開關速度等方面對于輸出級縱向pnp管進行了較為詳細的設計與分析,達到了電路中對輸出級縱向pnp管主要參數指標的要求。After being oriented, cutted and polished, the grown crystals was processed into a series of wafers
將晶體進行定向、切割和拋光,加工成晶片,測定了稀土離子的分凝系數、晶體的晶胞參數和折射率。The results show that the coupling efficiency is affected obviously by the fiber inclined angle, which can be improved if we choose the angle properly
結果表明,不同的光纖斜端面角度下,對半導體激光器的耦合效率影響很大,根據不同的晶元參數合理選擇不同的斜端面光纖可以得到盡可能高的耦合效率。Results show that the grain size of all samples is below 100nm, and the lattice parameters and grain sizes are dependent on the sintering temperature
結果表明,前驅體的焙燒溫度對樣品的晶型、晶胞參數及晶粒尺寸有很大影響。The template must also show the proper size and aspect ratio, otherwise, the template particles must be stable with the matrix at the desired growth temperature and environment
模板顆粒必須具有和pmn - pt類似的晶體結構和晶胞參數;模板顆粒必須具備足夠大的徑高比。After bamgal10o17 doped with sr, ca, the cell volume of each doped phosphors is shrunk and the crystal parameter c is decreased
摻雜少量的sr , ca后,所得的熒光粉的晶格參數c變小,晶胞體積也隨之變小。The calculation determined the main point defect under different cd pressure and the reaction enthalpies and entropies and the equilibrium constants in ( cd, zn ) te according to the quasi - chemical equations written for cdte sublattice. also the recipe of two - zone annealing process for cd0
根據計算結果,確定了不同氣氛條件下cd _ ( 1 - x ) zn _ xte ( x = 0 . 05 )晶體中佔主要地位的點缺陷和相關偽化學反應式的反應焓、反應熵及平衡常數,給出了兩溫區本徵退火的具體參數。After processing, the cell parameter, transparency, optical damage threshold of ktp crystal have been measured as well as the distribution coefficient of doped elements. the results showed that, after dopping, the cell parameter and transparency of ktp crystal changed little ; optical damage threshold increased three orders of magnitude than the common flux ktp, meanwhile, optical homogeneity decresed a little
將ktp晶體加工后測試了它們的晶胞參數、透過率、光損傷閾值、摻雜元素分凝系數等,結果表明,經過摻雜的ktp晶體晶胞參數、透過率等基本沒有變化,光學均勻性稍有下降,而激光損傷閾值卻提高了3倍。分享友人