晶體樣的 的英文怎麼說

中文拼音 [jīngtǐyàngde]
晶體樣的 英文
crystalloid
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 樣 : Ⅰ名詞1. （形狀） appearance; shape 2. （樣品） sample; model; pattern Ⅱ量詞（表示事物的種類） kind; type
  • 的 : 4次方是 The fourth power of 2 is direction
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. One such crystal is the ruby, which contains trivalent chromium ions dispersed in a matrix of alumina.

    這樣的晶體有一種叫「紅寶石」，它包含的三價鉻離子彌散在氧化鋁的基體中。
  2. In a photonic crystal the elements are about the same size as the wavelength of light ? a few hundred nanometres ( billionths of a metre )

    在光子晶體中，其成分與光的波長是同樣的大小? ?幾百納米（一米的十億分之一） 。
  3. The structures and characteristics of several graphite samples are measured by means of powder x - ray diffraction ( xrd ), brunauer - emmer - teller ( bet ) surface area measurement, inductively coupled plasma ( icp ) spectroscopy, particle size analysis and electrochemical measurements. the effects of origin, structure, impurity, particle size, specific surface area of carbon materials on the electrochemical characteristics are studied. a synthetic graphite with abundant resources, low cost and favorable performance is determined as the raw material for modification of graphite

    採用xrd 、 bet 、 icp 、激光粒徑分析及電化學性能測試等方法，對國內外多種典型石墨樣品的結構與性能進行比較，研究石墨材料的來源、晶體結構、雜質含量、顆粒大小、比表面積等因素對其充放電性能的影響，確定一種性能較好、價格低廉、來源廣泛的普通人造石墨粉作為熱處理與摻雜改性、以及復合結構炭材料研究的原材料。
  4. In that sort of half reverie which permits one to participate in an event and yet remain quite aloof, the little detail which was lacking began obscurely but insistently to coagulate, to assume a freakish, crystalline form, like the frost which gathers on the windowpane

    這種迷迷糊糊的幻想狀態既允許一個人置身於一個事件之中又叫他保持冷漠，在這種狀態中那尚未可知的小小細節開始模糊而又執著地凝聚，形成怪異的晶體，像窗子上結的霜，那些霜樣的晶體顯得這么怪誕，這么徹底無拘無束，這么奇形怪狀，然而它們的命運卻要由最最嚴酷的自然法則操縱，而我心中產生的感情亦是一樣。
  5. Nearly all hearing aids now manufactured make use of transistors, and are much the better for it.

    目前製造的助聽器差不多全都使用晶體管，而且這樣更好。
  6. The course concentrates on circuits using the bipolar junction transistor, but the techniques that are studied can be equally applied to circuits using jfets, mosfets, mesfets, future exotic devices, or even vacuum tubes

    本課程集中講解使用雙極結晶體管的電路，但所學技術同樣適用於使用jfet ， mosfet ， mesfet ，未來的稀有裝置，甚至真空管的電路。
  7. 3 ) in shell of hyriopsis cumingii ( lea ), the prismatic layers and the nacreous layers are all composed of aragonite minerals, and aragonite crystallites in prismatic layers show obviously preferential orientation of [ 012 ] axis perpendicular to the shell layers, so it is considered that the orientation of aragonite crystallites in prismatic layers perhaps play an important role in deciding the orientation of aragonite crystallites in nacre and acts as one of template to resulting the formation of aragonite with [ 012 ] orientation perpendicular to nacreous layers in nacre

    3 ）與海水貝殼明顯不同的是，三角帆蚌稜柱層礦物相與珍珠層一樣皆為文石相，同時查明稜柱層中文石晶體具[ 012 ]軸垂直殼層面的明顯的擇優取向。本文認為，三角帆蚌稜柱層中文石晶體的擇優取向可能對珍珠層中文石晶體的擇優取向存在模板導向的作用，導致珍珠層[ 012 ]定向的文石晶體的形成。
  8. Our approach differs from a recent theoretical paper that dealt with the possible conservation of the combined spin and orbital angular momentum in relation to the susceptibility of the down - conversion crystal

    我們的方法與新近一些理論文章提出的方法是不一樣的，他們處理自旋角動量和軌道角動量可能的守恆當中涉及到了下轉換晶體的磁化系數。
  9. In the dissertation, different soft - templates were used to regulate and control the growth progress of calcium carbonate under present conditions in our lab. versatile morphologies and different polymorph of calcium carbonate were produced in our experiences, and the mechanisms of these results were investigated

    本論文是在實驗室的條件下，利用多種軟模板調控碳酸鈣晶體的生長，研究了導致晶體結晶狀態和形貌的多樣性機理，現歸納如下： 1
  10. Icps have various forms ( bipyramidal, cuboidal, flate rhomboid, or a composite with two or more crystal types )

    Icp有各種各樣的晶形，如雙金字塔形，扁菱形，或兼有兩種或兩種以上的晶體形狀。
  11. Now let us consider crystals such as diamond or sapphire.

    現在讓我們考慮象鉆石和藍寶石這樣的晶體。
  12. Instead of relying on mechanical manipulations, majumdar and his colleagues speculated that silicon transistors might electrically control ions dissolved in fluids as well as they could electrons

    因此馬強達和同事舍棄了機械控制方法，他們猜想矽電晶體或許能像控制電子流向一樣，以電子方式控制溶解在液體中的離子。
  13. For the negative uniaxial crystal material, the principal mode is a hybrid guided mode, which can also be excited by the light at any frequency, but when the single mode propagation condition can not be satisfied, some of the higher order hybrid guided modes will exist in the waveguide

    對于負單軸晶體，波導的主模是混合模hgm _ 0模，該模式同樣可被任何頻率的光波所激勵；當光波波長滿足一定條件時，波導內傳輸單模，否則，將激勵起高階混合模。
  14. Due to the hardware characteristic ' s limitation, such as the poor speed of a / d, d / a conversion and dsp process, the most part of sr system adopt middle course. that is to say, by using the special digital converter or running relevant arithmetic, it converts the radio signal to intermediate frequency signal and completes the base - band signal process that is n ' t the veriest sr and is named " software defined radio ( sdr ) "

    由於受到硬體性能如a d 、 d a及dsp晶元處理速度的限制，目前的軟體無線電系統多採用折中的實現方案，增加專用的數字變頻器或者運行數字變頻演算法，將射頻信號變頻到中頻，然後再進行基帶信號處理，這樣的軟體無線電系統又被稱之為「軟體定義無線電」 ，它並不是真正意義上的軟體無線電。
  15. Placing a thin layer of insulation between the silicon surface and the transistors protects the transistors from " electrical effects, " leading to higher performance and lower power consumption

    在硅表面之間放上很薄的一層絕緣體，可以防止晶體管的「電子效應」 ，這樣可以實現更高的性能和更低的功耗。
  16. The proposed modulator uses 0. 35um standard cmos process, the nmos and pmos threshold voltage is 0. 54 volt and - 0. 48 volt, respectively, and the power supply is 1. 5 volt. the nyquist converter rate is 50 khz, oversampling ratio is 80. the proposed modulator can obtain 98db dynamic range, 16 bits converter resolution, and fits for high - fidelity, digital - audio application

    本設計採用0 . 35微米標準cmos工藝，其中nmos和pmos晶體管的閾值電壓分別為0 . 54伏和- 0 . 48伏，電源電壓為1 . 5伏，奈奎斯特轉換率為50khz ，過采樣率為80 ，該調制器可實現動態范圍98db ， 16位的轉換精度，適合高保真數字音頻應用。
  17. At the same time we obtained that the shg conversion efficiency of the flattened gaussian beam is higher than that of the gaussian beam under the same condition ; in section 3, we have computed the theoretical conversion efficiency of the thg on the flattened gaussian beam, where we also have worked out the type - i and type - 11 ( 1 ) thg conversion efficiency curves versus the same effectors, and found the flattened gaussian beams thg conversion efficiency is higher than that of the gaussian beam too ; in the section 4, we have simulated the field distribution of the shg and thg wave on the flattened gaussian beam

    在相同條件下，得出了平頂高斯光束的倍頻轉換效率高於高斯光束的倍頻轉換效率；第三章對平頂高斯光束在clbo晶體上的類和類混頻轉換效率與其影響因素的關系進行了數值模擬和計算，並同高斯光束進行比較，同樣得到混頻時，平頂高斯光束的轉換效率高於高斯光束的混頻轉換效率的結論；第四章模擬計算了平頂高斯光束的倍頻、混頻波橫向光場的分佈形式，得到了諧波場仍為均勻平頂高斯光束的結果。
  18. Zinc oxide ( zno ) is a wide band gap ( 3. 4ev ) semiconductor with the hexagonal crystal structure ( wurtzite type ). zno thin films with the c - axis orientation perpendicular to the substrate show excellent piezo - electrical properties and are widely used in piezo - electrical filed. and the dense anjd uniform surface of the films is required when zno thin films are used as integrated functional films

    Zno屬於六方晶系6mm點群，晶體在c軸垂直面上的電性和彈性都是對稱的，因而c軸擇優取向的多晶薄膜能夠具有單晶那樣的壓電性和光電性質，而具有平整均勻的表面形貌則是zno薄膜作為一種集成功能薄膜應用性能的保證。
  19. Above all, the optical propagation characteristics in crystals are studied in detail. derived from impulse response and sampling theorem in electronics, we establish the mathematical model of pif constructed by a series of birefringent crystal retarders with arbitrary azimuths sandwiched between two polarizers

    本論文首先深入分析光在晶體中的傳播特性，借鑒電學中的脈沖響應和采樣定理，建立由前後兩個偏振片之間夾放一系列角度任意延遲片構成的偏振干涉濾光片數學模型，並分析了其脈沖響應特性。
  20. The experimental instruments, apparatus and the means to prepare all the samples are introduced in the first section. in section 2, the experimental system including the oxidization system and diffusion system, are introduced therein. in section 3, the samples preparation including the pre - deposition, redistribution and re - oxidization, the samples of b doping, and the fabrication of ga - diffusion transistor, b - diffusion and the transistor formed by b diffusion following ga diffusion are detailed therein, and the as - prepared samples are analyzed by sims, srp and four point probe

    首先介紹了制備各種樣品所用的實驗儀器、設備與方法；第二節中介紹了實驗系統，包括氧化系統、擴散系統，第三節介紹了樣品的制備，包括ga的預沉積、再分佈、二次氧化樣品，擴硼樣品，以及擴嫁晶體管、擴硼晶體管和擴鐮后再補充擴硼晶體管的制備流程；實驗所得樣品，藉助二次離子質譜（ sims ） 、擴展電阻（ srp ） 、四探針薄層電阻等先進的測試分析方法進行分析。
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