晶體溫度效應 的英文怎麼說

中文拼音 [jīngtǐwēndùxiàoyīng]
晶體溫度效應 英文
crystal temperature effect
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 溫 : Ⅰ形容詞（不冷不熱） warm; lukewarm; hot; gentle; mild Ⅱ名詞1 （溫度） temperature 2 （瘟） acute ...
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 效 : Ⅰ名詞（效果; 功用） effect; efficiency; result Ⅱ動詞1 （仿效） imitate; follow the example of 2 ...
  • 應 : 應動詞1 （回答） answer; respond to; echo 2 （滿足要求） comply with; grant 3 （順應; 適應） suit...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  • 溫度 : [物理學] temperature
  • 效應 : [物理學] effect; action; influence
  1. Based on the analyses on mechanical properties, microstructure and fracture of - the microalloyed steels socrv with various heat treatment technique, it can be affirmed that various fractures arttribute to various mechanism, we can draw conclusion that the strength and toughness of microalloyed steels 50crv will be increase simultaneously by optimal heat treatment technique. to illustrate the mechanism of the strength and toughness of microalloyed steels socrv, we designed the comparative experiment and observed the microstructure of the sample which occurred at different quench and tempering temperature and different tempering time. the last experiment results were determined by the four factors : fined microalloyed elements grains, the decompound of martensite, martensite transformation of remnant austenite and the second phase precipitation

    為解釋微合金化50crv鋼強韌化機理，本文通過對不同淬火溫度，回火溫度，回火時間下的力學性能指標的對比及顯微分析，認為微合金元素的細化晶粒，馬氏體的回火分解，殘余奧氏體的轉變，第二相的沉澱析出共同決定了微合金鋼的強韌化情況，特別是由於微合金元素的存在，其細化晶粒及其碳氮化物的沉澱析出，導致鋼的良好的強韌性，並且如果工藝滿足第二相的沉澱析出強化大於回火馬氏體分解引起的軟化效應，會在硬度曲線中產生明顯的二次硬化現象。
  2. The precursors of lico0. 8ni0. 2o2 cathode material for lithium - ion batteries are prepared from lithium hydroxide, cobalt acetate, nickel acetate and oxalic acid by the method of low - heating solid - state reactioa the ucoagnioiqz samples are obtained by sintering the precursors at different temperatures for 12hr. their structures and morphologies are studied by the powder xrd and sem

    由於mil ：的jalllieller效應使mhoj面體發生畸變，焙燒溫度對樣品晶體棚及電化學性能的影響4肽，與同樣方法合成的li帥及eenaq相比， d仙血o的晶胞形狀變得更加扁平，晶胞體積增大。
  3. The chip of microbridge structure thermocouple type microwave power sensor is designed by using seeback domino offect of thermocouple. ta2n of relatively low resistor - temperature coefficient and si of relatively high thermoelectric power seebeck coefficient are used as thermocouple materials in the chip

    微梁結構熱偶微波功率傳感器晶元就是利用熱偶的塞貝克效應設計的，晶元選擇具有低電阻溫度系數的ta2n和具有高熱電系數的半導體單晶si作為熱偶材料。
  4. The results of pure cu show ecap can produce bulk material of submicrometer level indeed. as the number of passes increases, the initial structure of pure cu has been refined largely. after six passes, i. e. the equivalent true strain of 4 ~ 5, the grain size gradually becomes stable and uniform

    對純銅室溫ecap晶粒超細化行為及組織穩定性的研究表明： ecap技術的確能制備出亞微米級的塊體材料，隨著ecap道次的增加，純銅的組織被大大細化， ecap六道次（即等效真應變4 5 ）后，晶粒尺寸趨于穩定，硬度基本飽和。
  5. As we know, usually the wavelength tuning of the qpm - opo is achieved by changing the crystal temperature, but the response is not fast. in this paper we demonstrate the wavelength tuning of the qpm - opo by the electro - optic effect for the fast wavelength tuning

    我們知道，基於ppln的qpm - opo的波長調制通常可以通過改變晶體的工作溫度來獲得，但是這種靠溫度的調諧速度不快，本文給出了一種利用電光效應外加電壓快速調諧波長的方法。
  6. The device structure and physical models of 4h - sic mosfet and mesfet are built and the properties are simulated with the use of medici software. the influence of the temperature and structure parameter on the device ' s properties is summarized indicates that no negative resistance exists in breakdown property and the breakdown voltage is up to 85v and 209v separately. the maximum power density of 4h - sic mesfet is as high as 19. 22w / mm. at the same time, the processes of sic field - effect transistor is studied and the fabrication processes suitable to sic mosfet are developed.

    論文分析建立了4h - sicmosfet和mesfet器件的結構模型和物理模型，採用二維器件模擬軟體medici對4h - sicmosfet和mesfet的輸出特性進行了模擬分析，研究了溫度和結構參數對器件特性的影響，表明兩種器件的擊穿特性均沒有負阻現象，擊穿電壓分別達到85v和209v ，由此得到4h - sicmesfet最大功率密度可達到19 . 22w mm ；同時，研究了sic場效應晶體管的製作工藝，初步得到了一套製造sicmosfet器件的製造工藝流程，研製出了4h - sicmosfet器件。
  7. ( 3 ) both oxide - induced closure and embrittlement of grain boundaries take place for 2 - cr1mo and 2 - cr1mov at high temperature. the change of fatigue crack growth rates with temperature is not so evident as 316land 16mnr

    裂紋表面氧化引進的閉合效應和晶界脆化相對比較均衡，裂紋擴展速率隨著溫度升高的變化沒有鐵素體和奧氏體材料明顯。
  8. We analyze the generation of external cavity frequency - doubling with knbo3 crystal theoretically. in order to get the second - order nonlinear conversion from 858nm to 429nm with knbo3, we use non - critical type - i phase - matching to avoid the walk - off effect the corresponding optimum focusing condition is as followings : double refraction parameter b = 0, focus parameter = 2. 84, optimum phase mismatch parameter = 0. 574. based on the theoretical analysis and numerical calculations, we obtain the ideal nonlinear conversion coefficient about 1. 45 % / w with crystal length of 7mm and 2. 07 % / w with crystal length of 10mm at the phase - matching temperature around 23. 50c

    根據對其倍頻原理及性能的分析討論，在用該晶體完成波長從858nm到429nm的二階非線性轉換時，採用非臨界相位匹配條件（此時無離散效應，對應的雙折射參數b = 0 ，共焦長度為= 2 . 84 ，最佳相位失配因子為= 0 . 574 ） ，在相位匹配溫度約為23 . 5時，理論上通過計算得到理想情況下非線性轉換系數約為1 . 45 / w （長度為7mm ） ， 2 . 07 / w （長度為10mm ） 。
  9. The dominance and properties of the cmos integrated reference were also described, and the research meaning was pointed out. related device theory and process model used in design were described. the temperature related model and the influencing factor of two active devices, subthreshold mosfet and pnp substrate transistor, based on cmos process were analyzed and compared, and pointed out that the pnp substrate transistor was more fit for being the temperature compensating device for bandgap reference

    闡述了設計中相關的器件理論與工藝模型，對cmos工藝下的兩種有源器件，即亞閾值工作狀態下的金屬場效應晶體管（ mosfet ）及襯底pnp雙極型晶體管（ bjt ）的溫度模型及其影響因素進行了分析和比較，指明襯底pnp雙極型晶體管更適合作為基準源的溫度補償元件。
  10. ( 1 ) oxidation on the crack surface of 16mnr increase with temperature. oxidation mainly takes place on the crack surfaces at 150 ~ 300, which it is serious both on the crack surfaces and in the grain boundaries at 425. oxide - induced closure at 150 ~ 300 results in the drop of crack growth rates

    鐵素體材料16mnr疲勞裂紋表面的氧化隨溫度升高而增大，在150和300時裂紋表面氧化引進的閉合效應要比晶界氧化脆化更明顯，引起在這個溫度范圍內的試驗疲勞裂紋擴展速率下降。
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