晶體生長段 的英文怎麼說

中文拼音 [jīngtǐshēngzhǎngduàn]
晶體生長段 英文
crystal growing section
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 生 : Ⅰ動詞1 （生育; 生殖） give birth to; bear 2 （出生） be born 3 （生長） grow 4 （生存; 活） live;...
  • 長 : 長Ⅰ形容詞1 （年紀較大） older; elder; senior 2 （排行最大） eldest; oldest Ⅱ名詞（領導人） chief;...
  • 段 : Ⅰ量詞（部分） section; segment; part; paragraph; passage Ⅱ名詞（姓氏） a surname
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  • 生長 : grow; grow up; ascent; merisis; build up; auxesis; increment; overgrowth; gain; burgeon; bourgeon...
  1. At the same time because of the insolubility of calcium phosphate, topical extortionate concentration of calcium ions and phosphate ions, the vary of ph value and the effect of osteoblasts and proteins in oregano - bone matrix, the calcium ions and phosphate ions gave birth to crystal nucleus and came into being osteo - salt deposition, furthermore to form mineralized bone. finally, at the host osseous lamella far away the implanting area we found some material granules

    藉助于掃描電鏡等測試手段，實驗發現隨著植入時間的延長，材料區域的面積不斷縮小，晶體顆粒間的頸部連接斷開，顆粒的結構和形貌發生了較大的變化，且材料的內部出現了生命元素碳和硫等。
  2. Ultrafine powder, the high quality ultrafine power has been got. ( 2 ) the perfect rutile has been got with flame fusion method in developed domestic sjz sintering machine, and the technology of crystal growth has been clearly analyzed. in the end the suitable techniche has been got on the basis of systemic study on the conditions of growth

    通過對晶體生長中的籽晶方向、氣氛等的作用的大量深入的研究，得出了金紅石晶體焰熔法生長現階段的最佳工藝條件，即籽晶（ 001 ）在氫氧比為1 ： 1的附近，通過加氫進行擴肩，然後在1450加氧退火24hr后就能夠獲得完整透明的金紅石單晶。
  3. The microstructure morphology, the concentration, the infrared transmittance, and the x - ray rocking curves measured showed that a long single crystal part and axial steadily distributed zone of the concentration existed in the as - grown crystals. the radial concentration distribution has relatively high uniformity

    通過觀察生長態晶體中的微觀組織形貌，並測量晶體軸向和徑向上不同位置處的成分、紅外透過率和x射線回擺曲線，發現晶內有較長的單晶段和軸向成分穩定區。
  4. By means of sem, tem, laser scattered particle analyzer, etc., the formation mechanism of ultrafine sio2 particle was studied. it was found that at the initial stage, the sio2 particle consisted of some minicrystal, but after the initial stage the sio2 particle was formed by some soluble aggregated substance growing on the surface of the early particle

    運用掃描電鏡、透射電鏡、激光粒度分析儀等檢測手段，探討了體系中超細二氧化硅顆粒的形成機理和過程，指出超細二氧化硅粒子前期是由體系中的微晶核組成，中後期則由體系中的可溶性縮合物在其表面生長而成。
  5. We all know that the output of ultraviolet ( uv ) laser mostly depends on the conversion of nonlinear frequency, thus a new kind of excellent nonlinear optics ( nlo ) crystal is very important for the output of new wavelength

    紫外波段激光的輸出主要採用頻率變換技術來實現，因此一種好的非線性光學晶體對于產生新的波長是非常重要的。
  6. Obtaining structure and function of proteins is one of the main purposes of research in biology, but determining three - dimensional structure of protein by means of x - rays crystallography and nuclear magnetic resonance spectroscopy, and research in protein structure by the way of biochemistry, already can ’ t adapt the need of the rapid increase of protein sequence

    獲取蛋白質的結構和功能是生物學研究的重要目的之一，但是使用x光晶體衍射和核磁共振技術等實驗手段測定蛋白質的三維結構，以及使用生物化學方法研究蛋白質的功能時效率不高，已經無法適應蛋白質序列飛速增長的需要。
  7. We consider that the complexes of bmon ( m, n > 1 ) or the point defects induced by heavily boron doping may be involved in the nucleation of oxygen precipitates at high temperature range of crystal cooling. therefore it is reasonably deduced that the density of voids in hb cz silicon increases and the size of voids decreases due to the reduction of vacancy concentration as a result of heavy boron - doping enhanced oxygen precipitation prior to the void formation

    在實驗事實的基礎上，我們認為在重摻硼硅單晶生長過程中， bmon （ m ， n 1 ）復合體或摻b引起的點缺陷能在晶體冷卻過程中的較高溫度階段形成，且在隨后的退火過程中能穩定存在，作為氧沉澱形核的核心，從而促進了氧沉澱，減小了大直徑硅單晶中void缺陷的尺寸，增加其密度。
  8. The forming - nucleus drive power could form numerous little crystal nucleus under natural melting temperature. the formation of tic particles in the melt could be divided into two phases which was forming - nucleus and growth. the forming mechanism of tic was : melting ti first surrounded c, then ti melting in the alloy and c formed a complicated reaction mesosphere on the carbon surface

    根據熱力學及動力學分析，認為在碳顆粒界面處tic的形核率很高，形核驅動力足以在正常的熔煉溫度下形成眾多的小晶核；熔體中tic顆粒的合成可分為形核與長大兩個階段，其形核機制為：首先活性ti原子包圍c ，溶入合金中的ti與c在碳表面形成一復雜反應中間層，隨著反應進行， ti和c顆粒不斷減少，生成的tic不斷彌散分佈於熔體中；其長大過程伴隨著tic顆粒的相互堆砌、聚集和形態規則化。
  9. Even x86 chip manufacturers, which continued for quite a time to produce cisc chips, have based their 5th - and 6th - generation chips on risc architectures and translate x86 opcodes into risc operations to make them backwards - compatible

    甚至x86的製造商（他們在相當長的一段時間內都生產cisc晶元）也基於risc體系結構研製了他們的第五代和第六代晶元，並將x86的操作碼轉換成risc操作，以保持向後兼容。
  10. In order to understand the frost crystal growth, the nucleation process on the cold plate with constant temperature was investigated. the experimental results revealed that the lower the cold plate temperature is, the shorter the frozen time of water droplets, and the smaller the frozen water droplets

    為了加深對晶體生長階段的認識，本文對某一具有確定溫度的冷壁面突然與一定環境條件下的濕空氣接觸時冷壁面上的成核過程進行了研究。
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