晶體管作用 的英文怎麼說

中文拼音 [jīngtǐguǎnzuòyòng]
晶體管作用 英文
transistor action
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 管 : Ⅰ名詞1 （管子） pipe; tube 2 （吹奏的樂器） wind musical instrument 3 （形狀似管的電器件） valve;...
  • 用 : Ⅰ動詞1 （使用） use; employ; apply 2 （多用於否定: 需要） need 3 （敬辭: 吃; 喝） eat; drink Ⅱ名...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward

    介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本徵參數、寄生參數對頻率特性的影響，提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用於雙極晶體管電路的跨導線性原理，提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。
  2. In the case of layout design, discussed the effect and application of the transistor matching in the circuits design deeply. demonstrated the circuit layout check by lvs design

    在電路的版圖設計方面，較深入地討論了晶體管的匹配在電路版圖設計中的作用和應用，通過lvs對電路的版圖檢查進行了具體說明。
  3. If you don ' t want a high bandwidth transistor to oscillate place lossy components in at least 2 of the 3 leads. ferrite beads work well

    如果你不想通過在高帶寬晶體管三個引腳中的至少兩個引腳放置損耗元件的方法消除振蕩。鐵氧體磁珠會起到很好的作用。
  4. The exportation resistance of a device work device with what link after loading the resistance s the certain connections for should satisfying, in order to prevent mount to load the appearance produce the obvious influence. with each other connect to say to electronics equipments, for example after signal connect the enlarger, ex - class to connect class, only behind first - degree importation resistance before larger than first - degree exportation resistance 5 - 10 times are above, can think the resistance to match good ; connect the box come saying, electronics tube the machine should choose to use with for the enlarger its output to carry the mark to call the resistance the box for, but transistor enlarger then have noing this restrict, can take officing why resistance of equal or approximate box

    一件器材的輸出阻抗和所連接的負載阻抗之間所應滿足的某種關系，以免接上負載后對器材本身的工作狀態產生明顯的影響。對電子設備互連來說，例如信號源連放大器，前級連后級，只要后一級的輸入阻抗大於前一級的輸出阻抗5 - 10倍以上，就可認為阻抗匹配良好對于放大器連接音箱來說，電子管機應選用與其輸出端標稱阻抗相等或接近的音箱，而晶體管放大器則無此限制，可以接任何阻抗的音箱。
  5. In this paper, they are set forth at first that the kinds of computer - simulation of electronic devices, the development and the requirements of mosfet ' s model and the way of gain the models " parameters, the dc models have been bui it in chapter 2 and the models of big signals have been deduced in chapter 3, they are different from the equivalent circuit models in the traditional software pspice that they come from the numer i ca i - s i mu i at i on wh i ch is based on the essence equat i on, so the precision of simulation is enhanced ? mosfet ' s small signal models of low frequency, intermediate frequency and high frequency have been built in chapter 4 and chapter 5, although the equivalent circuit models in pspice are used for reference to bui id them, they have their own characteristics which are analyzed at a i i kinds of situations, so that the simulation software for mosfet can be written according them and it i s a i so benef i c i a i for us to catch the gen i us character i st i cs of mosfet and to d esign all kinds of applicable devices the correctness of the models is simply proved in chapter 6

    本文首先介紹了電子器件計算機模擬的分類、 mosfet的建模發展動態、對器件模型的要求以及模型參數的提取方法。在第二章中建立了mos晶體管在直流端電壓條件下的工作模型；第三章推導了mosfet的大信號模型，這兩類模型不同於傳統模擬軟體例如pspice中的等效電路模型，而是從模型方程出發，採用數值模擬的方法，提高了模擬的精度。第四章和第五章分別建立了mos晶體管低頻、中頻、高頻的小信號模型，雖然借鑒了pspice模擬軟體中用等效電路模型的方法，但是本文分別討論了準靜態和非準靜態時器件的本徵部分以及包含非本徵部分工作于低頻、中頻和高頻條件時的模型，可以根據這些模型編寫相應的模擬軟體，這樣在做器件的模擬分析與器件設計的時候，就可以利用模擬軟體逐步深入地分析器件在不同的條件下和器件的不同部分在工作時的各種小信號特性，有利於抓住器件工作的本質特性，設計出符合要求的各類通用和特殊器件。
  6. Along with silicon ulsi technology has seen an exponential improvement in virtually any figure of merit, as described by moore ’ s law ; the miniaturization of circuit elements down to the nanometer scale has resulted in structures which exhibt novel physical effects due to the emerging quantum mechanical nature of the electrons, the new devices take advantage of quantum mechanical phenomena that emerge on the nanometer scale, including the discreteness of electrons. laws of quantum mechanics and the limitations of fabrication may soon prevent further reduction in the size of today ’ s conventional field effect transistors ( fet ’ s )

    隨著超大規模集成電路的的發展，半導體硅技術非常好地遵循moore定理發展，電子器件的特徵尺寸越來越小;數字集成電路的晶元的集成度越來越高，電子器件由微米級進入納米級，量子效應對器件工作的影響變的越來越重要，尺寸小於10nm將出現一些如庫侖阻塞等新特性。量子效應將抑制傳統晶體管fet繼續按照以前的規律繼續減小。在這種情況下，宏觀的器件理論將被替代，可能需要採用新概念的晶體管結構。
  7. A modern power electron power component igbt ( insulate - gate bipolar transistor ) is used as the main power switch component of power converter. it takes 80c196mc single - chip as core processor

    電源變換器的功率開關器件採用現代電力電子功率器件igbt （ insulategatebipolartransistor ，絕緣柵雙極型晶體管） ，控制系統以80c196mc單片機作為控制核心。
  8. Transistor is viewed as a very important amplification and switching device in micro - electric field

    晶體管可以說它是微電子中非常重要的器件，它最主要的功能是電流放大和開關作用。
  9. Adopts domestic advanced technology, imported transistor and heat emitting chip, has high reliability, stability and performance. improved the products working ability in bad condition, can be compared with imported ones

    產品採用國內先進工藝，進口晶體管和良好的散熱片，保證了產品的可靠性和穩定性，提高了產品性能指標，增強在惡劣環境下工作的能力，並與進口產品相併論。
  10. According to negative temperature coefficient of vbe and positive temperature coefficient of vt, a framework of band - gap voltage reference is investigated. the reference offer a source of pir, distributed three voltage, one as upper - threshold voltage of dual - threshold comparator, the other as lower - threshold voltage of comparator, the other as direct current voltage for second band - pass filter amplifier

    同時利用pnp晶體管發射結電壓的負溫度特性和發射結差值電壓的正溫度特性設計了一個帶隙基準電壓源。此帶隙基準電壓源本身作為熱釋電紅外傳感器的電源電壓，同時分壓提供雙限電壓比較器的上限電平和下限電平以及第二級帶通濾波放大器的直流電平。
  11. After introduction of the tranlinear loop principal, the bjt current controlled conveyor has been designed by using mixed tranlinear loop voltage follower. as for modern integrated circuit, the model of mos transistor, the active resistance and the current mirror integrated circuit formed by mos transistor are introduced. the cmos current controlled conveyor has been derived from mixed tranlinear loop cmos voltage follower based on weak inversion operation

    針對現代集成電路的工藝，本文對mos晶體管的工作原理進行了簡要的敘述，討論了有源電阻和電流鏡的實現方法，並利用mos晶體管的亞閾值特性組成混合跨導線性迴路完成對應的電壓跟隨器的設計，推導出了基於cmos技術的電流控制傳送器。
  12. Ibm, long a leader in the research and development area, recently announced two major changes in processor manufacturing technology : the company has begun using copper rather than aluminum wiring between the transistors that make up the processor, and it will use silicon as an insulator for those transistors

    Ibm長久以來一直是科研領域中的領先者，最近它宣布了處理器製造技術中的兩項重大改進：該公司已開始在構成處理器的晶體管之間用銅線代替鋁線連接，它還將用硅作為這些晶體管的絕緣器。
  13. The device structure and physical models of 4h - sic mosfet and mesfet are built and the properties are simulated with the use of medici software. the influence of the temperature and structure parameter on the device ' s properties is summarized indicates that no negative resistance exists in breakdown property and the breakdown voltage is up to 85v and 209v separately. the maximum power density of 4h - sic mesfet is as high as 19. 22w / mm. at the same time, the processes of sic field - effect transistor is studied and the fabrication processes suitable to sic mosfet are developed.

    論文分析建立了4h - sicmosfet和mesfet器件的結構模型和物理模型，採用二維器件模擬軟體medici對4h - sicmosfet和mesfet的輸出特性進行了模擬分析，研究了溫度和結構參數對器件特性的影響，表明兩種器件的擊穿特性均沒有負阻現象，擊穿電壓分別達到85v和209v ，由此得到4h - sicmesfet最大功率密度可達到19 . 22w mm ；同時，研究了sic場效應晶體管的製作工藝，初步得到了一套製造sicmosfet器件的製造工藝流程，研製出了4h - sicmosfet器件。
  14. The fabrication of the nano - structures and the study of nanoelectronic devices ( single electron transistor - set, single electron memory, etc. ) are one of the most important projects of the nanoelectronics and nanotechnology, of a study field with most vitality, progressive future, and it may bring magnitude effect to new technology revolution and industry in future

    納米結構的制備和納米電子器件（單電子晶體管、單電子存儲器等單電子器件）的研究是納米電子技術中最重要的研究內容之一，是最具有生命力、最具有發展前途，對未來新技術革命和產業可能帶來革命性作用的研究領域之一。
  15. As a new bus standard in computer peripheral hardware, usb is adopted and widely used in virtual instruments for its ease of use, true plug and play, power supply from bus, high transmission speed, etc. the purpose of this project is to design and develop a virtual instrument that can test and display semiconductor transistor output characteristics curve, instead of tradition instrument which has being used in labs by now

    而usb總線作為一種新興的計算機外設總線標準，由於易用、支持熱插拔、總線供電、傳輸速率高等特點，已經在虛擬儀器當中得到采納與普及。本文介紹了一種實現晶體管特性曲線測量的虛擬測試儀器的設計和製作方案，其可用來取代目前在實驗室中使用的老式的晶體管特性圖示儀。
  16. To compare with transistor ( complete solid - state ) high - frequency linear power amplifier, there are some disadvantages : bad stability and reliability, low efficiency, high cost for operating, huge cabinet, heavy maintenance work load, low security for high - voltage electricity offering, and to ensure the continuance of tv program, the transmitter must be operating with main frame and spare frame

    它們與晶體管（全固態）高頻線性功率放大器相比，存在著穩定性及可靠性差、效率低、運行費用高、發射機體積大、日常維護工作量大、高壓供電不安全、必須採用主機和備機的運行方式來確保電視節目不停播等缺點。
  17. In modern vlsi technology, hundreds of thousands of arithmetic units fit on a 1cm 2 chip. the challenge is supplying them with instructions and data. stream architecture is able to solve the problem well

    在摩爾定律作用下，在單晶元上可集成的晶體管數快速增長，單晶元擁有成百上千的運算單元不再是問題，關鍵是如何給如此多的alu提供足夠的指令和數據。
  18. Standard test method for use of 2n2222a silicon bipolar transistors as neutron spectrum sensors and displacement damage monitors

    作為中子光譜傳感器和位移損壞監測器的2n2222a硅雙極晶體管的使用的標準試驗方法
  19. This paper realized frequency modulation using the video signal to directly control the resonance loop ' s diode of the vco at the early stages, and then through using radio frequency bipolar junction transistor, designed a lc voltage controlled oscillator which was emulated by advance design system. in addition, it also implemented the design and debugged the hardware circuit

    本文第一次實驗採用視頻信號直接控制vco諧振迴路變容二極體的方式實現頻率調制，並且利用射頻雙極性晶體管（ bjt ）設計了一種lc壓控振蕩器，通過ads軟體進行了參數模擬，最後進行了硬體電路的製作和調試。
  20. A silicon self - aligned technology was achieved by using a smart power integrated technology to get high power of the circuit. vertical pnp transistor whose base is epitaxy layer was used as output. the collector of the vertical pnp transistor was set on the back of the chip with low resistance p + substrate as ohm contact

    在工藝中，採用了smart功率集成技術實現電路的大功率，基區是外延層的縱向pnp晶體管作為輸出，將集電極置於晶元背面，採用低電阻率p ~ +襯底作為歐姆接觸。
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