晶體管噪聲 的英文怎麼說

中文拼音 [jīngtǐguǎnzàoshēng]
晶體管噪聲 英文
transistor noise
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 管 : Ⅰ名詞1 （管子） pipe; tube 2 （吹奏的樂器） wind musical instrument 3 （形狀似管的電器件） valve;...
  • 噪 : 動詞1. （蟲或鳥叫） chirp 2. （大聲叫嚷） make noise; make an uproar; clamour
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. Based on the analysis of transistor amplifier noise model, we select devices with low noise in reason. and the method how to reduce phase noise and phase jitter is also discussed

    依據晶體管放大器的噪聲模型分析合理選擇了低噪聲的元器件，對降低相位噪聲和相位抖動的方法作了一些探討。
  2. During this precess, using the technology of optimizing the widths of both common source mosfet and common gate mosfet under a fixed power, we obtained a compromised result of power consumption and noise figure

    設計過程中，在限定功耗的前提下，主要針對共源晶體管和共柵晶體管的柵寬，對電路的性能進行了優化，使得設計的lna的噪聲系數最小。
  3. Additional noise contributions are due to the statistical fluctuations of the processes in the valves and transistors.

    其他噪聲的產生來自電子管和晶體管中電過程的統計起伏。
  4. Abstract : to against the fact of the commercial available white noise generators are very expensive which is not good for general operations, a simple and effective limited band white noise generator is design. the generator is using the feature of dual polarity transistor, i. e., the power spectrurn density of particulate noise is not related to frequency in very wide band and close to white noise. the concrete circuit is also given

    文摘:針對市售白噪聲發生器價格昂貴，不利於一般場合使用的問題，介紹利用雙極性晶體管散粒噪聲功率譜密度在非常寬的范圍內與頻率無關，屬白噪聲這一特性，設計了一種簡捷、有效的限帶白噪聲發生器，並給出了具體電路。
  5. Saturating logic draws large fast current spikes from its supply during switching and, having noise immunity of hundreds of millivolts or more, has little need of high levels of supply decoupling

    晶體管在開關過程中會流過短暫的大電流（帶來噪聲） ，但是數字電路的噪聲容限可達數百毫伏，所以對電源去耦的要求不高。
  6. Semiconductor discrete devices. detail specification for type 3dg144 npn silicon high - frequency low - noise low - power transistor

    半導體分立器件. 3dg144型npn硅高頻低噪聲小功率晶體管詳細規范
  7. Semiconductor discrete devices. detail specification for type 3dg143 npn silicon high - frequency low - noise low - power transistor

    半導體分立器件. 3dg143型npn硅高頻低噪聲小功率晶體管詳細規范
  8. Semiconductor discrete devices. detail specification for type 3dg142 npn silicon high - frequency low - noise low - power transistor

    半導體分立器件. 3dg142型npn硅高頻低噪聲小功率晶體管詳細規范
  9. Semiconductor discrete device. detail specification for type cs203 gaas microwave low noise field effect transistor

    半導體分立器件. cs203型砷化鎵微波低噪聲場效應晶體管詳細規范
  10. Semiconductor discrte device. detail specification for silicon npn ultra - high frequency low - noise difference match transistor of type 3dg210

    半導體分立器件. 3dg210型npn硅超高頻低噪聲差分對晶體管.詳細規范
  11. Semiconductor discrete device. detail specification for silicon npn ultra - high frequency low - noise dual - difference match transistor of type 3dg213

    半導體分立器件. 3dg213型npn硅超高頻低噪聲雙差分對晶體管.詳細規范
  12. Lowest noise figure of a rf transistor is not normally where the input is perfectly matched

    射頻晶體管的最低噪聲系數通常不在輸入完全匹配的地方。
  13. To reduce power dissipation of the amplifier, a kind of on / off technology is used in the circuit. with a little bias current circuit to control the main bipolar transistor operation, the transistor will be in a state of on / off

    採用器件旁路小電流工作電路，實現對低噪聲放大器主要工作晶體管的控制，使該晶體管按需要分別處于工作或關斷狀態，保證了放大器的極低功耗。
  14. Semiconductor discrete devices detail specification for type 3dg44 silicon uhf low - noise transistor

    半導體分立器件. 3dg44型硅超高頻低噪聲晶體管.詳細規范
  15. Semiconductor discrete devices detail specification for type 3dg251 silicon uhf low - noise transistor

    半導體分立器件. 3dg251型硅超高頻低噪聲晶體管.詳細規范
  16. Semiconductor discrete devices detail specification for type 3dg142 silicon uhf low - noise transistor

    半導體分立器件. 3dg142型硅超高頻低噪聲晶體管.詳細規范
  17. Semiconductor discrete devices. detail specification for type 3dg218 silicon microwave low - noise transistor

    半導體分立器件. 3dg218型硅微波低噪聲晶體管詳細規范
  18. Vco ’ s theory and parameters especially for the basic mechanism of phase noise are studied. the parasitic effects of rf - ic passive devices such as inductors and varactors and the design guidelines for the on - chip spiral inductors are included too. the accumulation - mode varactor, which has a higher quality factor value than the inversion - mode mos varactor, is studied in detail

    研究電感和變容管這兩種射頻集成無源器件的寄生效應和射頻mos晶體管的熱噪聲模型，提出集成電感的設計原則和優化方法，詳細研究了一種新型的積累型mos可變電容，這種積累型mos變容管比一般的反型mos變容管有更高的品質因數。
分享友人
分享到 Line

分享到臉書