晶體管集極 的英文怎麼說

中文拼音 [jīngtǐguǎnjíjí]
晶體管集極 英文
transistor collector
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 管 : Ⅰ名詞1 （管子） pipe; tube 2 （吹奏的樂器） wind musical instrument 3 （形狀似管的電器件） valve;...
  • 集 : gatherassemblecollect
  • 極 : i 名詞1 （頂點; 盡頭） the utmost point; extreme 2 （地球的南北兩端; 磁體的兩端; 電源或電器上電流...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. In the 1960s the ic market was broadly on bipolar transistors.

    六十年代集成電路市場主要為雙極型晶體管。
  2. The course concentrates on circuits using the bipolar junction transistor, but the techniques that are studied can be equally applied to circuits using jfets, mosfets, mesfets, future exotic devices, or even vacuum tubes

    本課程集中講解使用雙極結晶體管的電路，但所學技術同樣適用於使用jfet ， mosfet ， mesfet ，未來的稀有裝置，甚至真空管的電路。
  3. Modern voltage references are constructed using the energy - band - gap voltage of integrated transistors, buried zener diodes, and junction field - effect transistors

    現代電壓基準建立於使用集成晶體管和帶狀能隙基準、掩埋齊納二極體和結場效應晶體管。
  4. Circuit board, integrated circuit, resistor, capacitor, chips, rectifier, led, diode, transistor, laser pick - up head and all kinds of electronics component

    電路板集成電路電阻電容主晶元整流管發光管二極體三極體鐳射光頭等各類電子零件
  5. Xing su ( microelectronics and solid state electronics ) directed by prof. lin chenlu the fast development of information technology requires integrated circuit to be greater integrated, faster functioned, and lower power - consumed, that lead to continuous shrinkage of mos and dram feature size. and under this trend the thickness of mos gate dielectrics ( sio2 ) would soon scale down to its physical limit

    日益增長的信息技術對更高集成度、高速、低功耗集成電路的需求，驅使晶體管的尺寸越來越小，隨之而來的問題是作為mos柵氧化物和dram電容介質的sio _ 2迅速減薄，直逼其物理極限。
  6. With respect to a bipolar transistor, the condition in which the gate current equals or exceeds the value necessary to provide full emitter collector conduction

    就雙極型晶體管而言，其門電流等於或超過必要的值，使發射極集電極充分導通的一種狀態。
  7. At low frequencies, the current in the collector of a transistor is in phase with the applied current at the base

    在低頻段，晶體管的集電極電流與施加在基級的電流同相。
  8. We ' ve seen already how maintaining a constant base current through an active transistor results in the regulation of collector current, according to the ratio

    我們已經看到有源晶體管的恆定的基極電流是如何以系數控制集電極電流的。
  9. Remember, the transistor ' s collector current is almost equal to its emitter current, as the ratio of a typical transistor is almost unity ( 1 )

    不要忘了，通常典型晶體管的系數幾乎是1 ，因此晶體管集電極電流與發射極電流也幾乎是相等的。
  10. If we have control over the transistor ' s emitter current by setting diode current with a simple resistor adjustment, then we likewise have control over the transistor ' s collector current

    我們只要簡單的調節電阻，設定二極體電流，就能控制晶體管的發射極電流，於是也就能控制晶體管集電極電流。
  11. Small signal bipolars with b - c tied together will also make nice low - leakage diodes

    連接基極-集電極的小信號雙極性晶體管也可以作為不錯的低漏電流二極體。
  12. Bright white collections of polarizable crystals are seen here, but are diffuse and centered around vascular spaces

    亮白色可極化晶體，但都在血管內呈彌漫和集中分佈。
  13. A planar sige heterojunction bipolar transistor was fabricated using polysilicon emitter technology and sige base grown by molecular beam epitaxy. the sige hbt

    室溫下該晶體管的直流電流增益為30到50 ，基極開路下，收集極-發射極反向擊穿電壓
  14. Discrete semiconductor devices and integrated circuits - bipolar transistors

    分立半導體器件和集成電路.雙極晶體管
  15. A silicon self - aligned technology was achieved by using a smart power integrated technology to get high power of the circuit. vertical pnp transistor whose base is epitaxy layer was used as output. the collector of the vertical pnp transistor was set on the back of the chip with low resistance p + substrate as ohm contact

    在工藝中，採用了smart功率集成技術實現電路的大功率，基區是外延層的縱向pnp晶體管作為輸出，將集電極置於晶元背面，採用低電阻率p ~ +襯底作為歐姆接觸。
  16. A new type high efficiency synchronous step - up dc / dc converter for hand - held device is designed in this thesis. it works in the pfm ( pulse frequency modulating ) mode, and its switching frequency can up to 500 khz. it offers a built - in synchronous rectifier that reduces size and cost by eliminating the need for an external schottky diode and improves overall efficiency by minimizing losses

    本文設計了一種用於移動電子設備的高效同步整流的dc / dc升壓晶元，該晶元採用pfm （脈沖周期調制）調制方式，工作頻率最高可達500khz ，內部集成功率管作為同步整流管，代替傳統的肖特基二極體，導通電阻僅有0 . 4
  17. After introducing characteristic and hardware structure of dsp, 1 decide to adopt current excellent performance integrate dsp and its tap system ; after i know this, this paper present a software and hardware scheme which is based on fault signal " data acquisition and processing by using advanced dsp technology, and in arithmetic aspect, a dsp based real - time digital filter comes true. this simplifies the system design and improves the stability and real - time property of data acquisition. adopting a dsp integrate plank ( including a dsp cmos chip and external storages ) and using software to manage and prepare entire system can improve greatly the extension, maintenance and common of the application system

    在闡述了dsp的硬體結構及特點之後，結合本課題的研究方向，本文決定採用目前最高性能的dsp集成板及其開發系統，並在了解此集成板的硬體結構和開發環境的基礎上，提出了利用先進的dsp技術來實現故障信號的採集與處理的軟硬設計方案，並從演算法方面實現了dsp的實時數字濾波，簡化了測試系統的設計，提高了測試儀器的實時性；而採用dsp板卡（上面含有一個dsp晶元及外存） ，通過軟體對整個系統進行調配和管理，可以極大地提高應用系統的可擴展件、可維護件及通用性。
  18. The most effective converter that fits for such kind of application is a well - known full - bridge three - phase vsi ( voltage source inverter ) converter with igbt ( insolated gate bipolar transistor ) modules, which can be used in wind power generation system or other general purpose utilizations such as asd ( adjustable speed drive ), active rectifiers, ac power supplies, and so forth

    最適合的變換器就是igbt （集成門極雙極性晶體管）三相全橋電壓源變換器，這種拓撲結構的變換器可以應用到風力發電系統或者其他通用的場合，比如asd （變速驅動）系統、有源整流、交流電源等等。
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