晶體雜質 的英文怎麼說

中文拼音 [jīngtǐzázhí]
晶體雜質 英文
crystal impurity
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 質 : Ⅰ名詞1 （性質; 本質） nature; character; essence 2 （質量） quality 3 （物質） matter; substance;...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  • 雜質 : [固體物理] impurity; foreign substance; impurity substance; inclusion; foreign matter
  1. The structures and characteristics of several graphite samples are measured by means of powder x - ray diffraction ( xrd ), brunauer - emmer - teller ( bet ) surface area measurement, inductively coupled plasma ( icp ) spectroscopy, particle size analysis and electrochemical measurements. the effects of origin, structure, impurity, particle size, specific surface area of carbon materials on the electrochemical characteristics are studied. a synthetic graphite with abundant resources, low cost and favorable performance is determined as the raw material for modification of graphite

    採用xrd 、 bet 、 icp 、激光粒徑分析及電化學性能測試等方法，對國內外多種典型石墨樣品的結構與性能進行比較，研究石墨材料的來源、晶體結構、雜質含量、顆粒大小、比表面積等因素對其充放電性能的影響，確定一種性能較好、價格低廉、來源廣泛的普通人造石墨粉作為熱處理與摻雜改性、以及復合結構炭材料研究的原材料。
  2. Complete crystal shape, high diaphaneity and low impurity. suitable for circular saws, frame saws and geological broach

    晶體完整，透明度高，雜質含量低，晶形與晶體強度性能優越。使用於圓鋸切片、框鋸切片、地質鉆頭。
  3. In this paper, oxid crystals were synthesized by the hydrothermal method, and the effects of the hydrothermal condition on shape and quality of crystal were studied by changing experimental temperature and mineralizer. on the base of these works the blue sapphire dopped with fe, ti and sapphire dopped with ti were synthesized. meantime, the effects of ti, fe - dopped on sapphire and what lead to the blue of sapphire were studied

    本文採用水熱法合成了- al _ 2o _ 3和zno晶體，通過改變溫度和礦化劑條件研究了水熱條件下溫度和礦化劑對- al _ 2o _ 3和zno晶體合成的影響；在此基礎上通過摻雜致色元素，合成了藍色藍寶石、鈦藍寶石，並研究了fe 、 ti等致色離子對藍寶石晶體界面形態和質量的影響，分析了藍寶石的致色原因。
  4. Ground state energy of a pollution state in polyatomic polar crystals

    多原子極性晶體系統中雜質態的基態能量
  5. The unstable solid solution would disintegrate and transform into carbide phases in these systems of sisocso, tisocso and zrsocso, based on the increase of free energy introduced by the effect mechanical alloying. for the system of wsocso, the solid solution had not transformed into tungsten carbides but an amorphous phase, which was different from those systems. the exist of fe in these experiments, which came from the abrasion of ball - milling tool because of the higher hardness of w and w - c solid solution, would induce the crystalline - to - amorphous phase transformation during milling

    C50球磨體系中，繼續球磨時，不穩定的固溶體在機械合金化作用下，由於體系能量提高，會發生分解相變，從而可以形成碳化物；對于w扣c50球磨體系， w ? c固溶體具有較高的硬度，磨削不銹鋼質的球磨介質和球磨容器，而引入雜質，其中fe會促使固溶體向非晶相轉變。
  6. In this paper, the effect of interface properties of sio2 / sic on performances of n - channel sic mofet are studied systematically : incomplete ionization of impurity in sic is analyzed based on the crystal structure of sic materials. the effect of incomplete ionization of impurity on c - v characteristics of p - type 6h - sic mos is researched based on charge - sheet model for sic mos inversion layers

    本文就sio _ 2 / sic界面質量對n溝sicmosfet性能的影響做了深入的研究：從碳化硅材料的晶體結構出發分析了碳化硅材料中雜質的不完全離化，採用sicmos反型層薄層電荷數值模型，研究了雜質不完全離化對p型6h - sicmosc - v特性的影響。
  7. With the development of science and technology, more and more oxide crystals are synthesized by more and more advanced technique, the new oxide crystals are incessantly synthesized and the new characters of oxide crystals are incessantly founded. corundum dopped with impurity not only is cherished because of it ' s beautiful appearance, but also is used in the fields such as electrotechnics, mechanism, laser, the optic apparatus and the underlay of semiconductor. sapphire dopped with ti3 + is the best material of the tunable solid laser. zno crystal is material of the direct gap semiconductor ( the width of forbidden band : 3. 37ev ). the excited emission in zno crystal at room temperature has been found, so the ultraviolet luminescence in zno semiconductor can be acquired at room temperature

    含有少量雜質的剛玉晶體（ - al _ 2o _ 3 ）不僅由於其色澤艷麗成為人們珍愛的名貴寶石，而且由於它具有的優異性能，被廣泛應用於電工、機械、激光器，光學器件和半導體襯底材料。鈦藍寶石是目前最優異的固體寬帶調諧激光材料，用於製作飛秒脈沖可調諧激光器。氧化鋅晶體是直接帶隙寬禁帶半導體材料（禁帶寬度3 . 37ev ） ，現已發現具有室溫下受激發射特性，有可能實現室溫下半導體紫外發光。
  8. Slight displacements of atoms relative to their normal lattice positions, normally imposed by crystalline defects such as dislocations, and interstitial and impurity atoms

    原子相對於它們正常點陣位置的輕微位移，通常是由晶體的缺陷，如位錯、間隙原子、雜質原子存在引起的。
  9. Znd2160 complete crystal shape with full surface, good diaphaneity and low impurity, suitable for circular saws, frame - saw and geological broach

    Znd2160晶體完整，晶面飽滿，透明度高，雜質含量低，晶形與晶體強度性能優越。使用於圓鋸切片、框鋸切片、地質鉆頭。
  10. Test method for determination of impurity concentrations in silicon crystal by photoluminescence spectroscopy

    用光致發光光譜法測定硅晶體中雜質濃度的試驗方法
  11. The grown solution of dkdp crystal was synthesized firstly, then the relationship between concentrations of metal ion impurities and critical supersaturation was discussed by the measurement of metal ion impurity concentrations

    本文首先合成了dkdp晶體生長溶液，測定了合成溶液中部分雜質金屬離子的含量，討論了雜質金屬離子濃度和臨界過飽和度之間的關系。
  12. On photo - electric properties of nanwire mosfet with its crystal microstructure

    未摻雜納米線高電阻與其晶體微結構光電性質
  13. 32 the detail given in these two sections again indicates that if material is " reworked " a much deeper assessment should be made of the resulting product and the advice that concurrent validation is a suitable means of dealing with " reworking " only underlines the fact that it would be insufficient solely to check the reworked material against the original specification, due to the possibility of that reworked material may contain new impurities or may have different physical properties such as crystal structure

    32這兩部分所給出的細節說明，如果對一個產品進行了再加工，需要對產品結果進行更深入的評估，關于「同步驗證是處理再加工的恰當方法」意味著僅僅根據最初的技術標準對再加工物料產品進行檢查是不夠的，因為再加工原材料中有可能含有新的雜質或存在不同的物理性狀例如晶狀體等。
  14. This edta route has several remarkable advantages in comparison with other method. because of the greater ability of edta anions to chelate metal cations, and forming very stable and soluble complexes, all of the starting materials are mixed at the molecular or atoms level in a solution, it is easy to control the composition and a high degree of homogeneity is achievable

    傳統的合成方法是高溫固相反應，由於灼燒溫度高、灼燒時間長，形成硬團聚體，產物粒徑較大，一般為m級，需進行球磨粉碎以減少其粒徑，很難制得均相、均一粒度分佈的氧化物粉體，在研磨過程中容易引入雜質且晶形破壞使得發光亮度減小。
  15. The liquid - phase synthetic method was improved to obtain the sedimentation of yvo4, which makes the procedure more convenient and the sedimentation more compact. based on the syntheses of the raw materials, the czochralski method was used to grow the crystal from different charges. by comparing with the spectrum in the ultra - violet region of the yvo4 crystals grown in the same condition, the result was reached that the presence of the 1552 absorption peak is independent of the direction of the crystal growth and the annealing, but is related to the impurity of the charges

    採用多種方法合成了用於晶體生長的yvo _ 4原料，改進了液相合成法中獲得yvo _ 4沉澱的方法，使得該方法更為簡便，獲得的沉澱更加緻密；在原料合成的基礎上，採用提拉法對來源不同的生長原料進行了生長，並通過對在相同氣氛下生長的晶體的紫外透過譜線的對比，指出了該吸收峰的存在與晶體生長方向及有無退火無關，進而提出該吸收峰的存在與合成原料中有無雜質有關。
  16. Based on the requirement of the device, we grow the films of silicon of high quality. the thickness of the epilayer is from 0. 4 u m tol p m, the doping concentration can be controlled conveniently

    然後，根據器件的要求，利用uhv cvd技術，生長出優質薄硅外延片，其厚度在0 . 4 m 1 m ，摻雜濃度可任意調節，晶體質量良好。
  17. The electronic properties of hg _ ( 1 - x ) mn _ ( x ) te are dominated by defects, including native point defects ( vacancies, interstitials, antisites, and complexes ), extended defects ( all types of dislocations, grain boundaries, precipitates, melt spots, etc. ), and undesired impurities

    Hg _ （ 1 - x ） mn _ xte晶體的電學性能受缺陷的影響很大。晶體的缺陷主要有：原生點缺陷（空位、間隙原子、反位原子和復合體） 、擴散缺陷（各種位錯、晶界、沉澱相、低熔點相等）以及一些雜質。
  18. Spinel limn2o4 begin to form at 350 with the sintering time of 4 hours because there are one li + and two mn2 + in one precursor molecule. when the sintering temperature is larger than 750, a specific sintering route is designed to avoid the formation of li2mno3 impurities

    前驅體的焙燒溫度和焙燒時間對limn _ 2o _ 4樣品的晶相結構有很大的影響，焙燒溫度高於750時，應採用分段焙燒工藝以防止局部高溫形成li _ 2mno _ 3雜質。
  19. According to the sample prepared by hydrothermal method, the doping cations can enter the spinel lattice. rare earth cations mostly occupy position b because of their big radius. cerium are oxidized to ce4 +, whose radius is relatively small, and ce4 + mostly occupies position a. as a whole, the coercivity of cobalt ferrite doped with rare earth element is bigger than that of pure cobalt ferrite

    結果表明，對水熱法制備的鐵氧體粒子，雜質離子能夠進入其尖晶石晶格中，並因稀土離子的半徑較大，而絕大部分佔據尖晶石的b位，鈰元素因被氧化成為四價離子，離子半徑相對較小，而主要佔據a位。
  20. Therefore, znte crystal has been the most common material for pulsed thz wave sensing and imaging applications. kai liu et al have studied < 110 > - oriented zn1 - xcdxte crystals with various composition ratios and different doping levels to find optimal materials " parameters for high performance thz radiation emitters. they explained their experimental results from the points of view of crystal quality and crystal dc resistivity

    為了進一步認識znte晶體產生thz輻射的效率與材料特性的關系，劉凱等人研究了不同組分、不同摻雜的zn _ （ 1 - x ） cd _ xte （ 110 ）單晶（ x = 0 0 . 4 ）產生thz輻射的效率，並從晶體的質量和晶體的直流電阻率出發解釋了他們的實驗結果。
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