本底離子 的英文怎麼說

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本底離子 英文
background ions
  • 本 : i 名詞1 （草木的莖或根）stem or root of plants 2 （事物的根源）foundation; origin; basis 3 （本錢...
  • 底 : 底助詞（用在定語后, 表示定語和中心詞之間是領屬關系, 現在多寫作「的」）
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 離子 : [物理學] ion
  1. They were, says mr stephen, and the end was that the men of the island, seeing no help was toward as the ungrate women were all of one mind, made a wherry raft, loaded themselves and their bundles of chattels on shipboard, set all masts erect, manned the yards, sprang their luff, heaved to, spread three sheets in the wind, put her head between wind and water, weighed anchor, ported her helm, ran up the jolly roger, gave three times three, let the bullgine run, pushed off in their bumboat and put to sea to recover the main of america

    「此語不差」 ，斯蒂芬先生曰， 「其結果，本島男子發現負情女子異口同聲，無可救藥。遂建造舟筏，攜家財登船，桅桿盡皆豎起，舉行登舷禮，轉船首向風，頂風停泊，揚起三面帆，在風與水之間挺起船首，起錨，轉舵向左，海盜旗迎風飄揚，三呼萬歲，每次三遍，開動艙底污水泵，離開兜售雜物之小舟，駛至海面上，航往美洲大陸。 」
  2. Based on the extensive studies of subtilisin - like protease ( prl ) of metarhizium anisopliae, extracellullar serine protease is suggested to be a key enzyme involved in the fimgal penetration to invertebrates. the investigation of serine protease in the nematode infected by owvtl may help to understand the mechanism of nematophagous fimgi as biological control agents. a 3l kda serine protease was isolated and purified from the liquid culture of h rhossiliensis owvtl challenged with nematode panagrellus redivivus

    本研究利用線蟲誘導下owvt - 1菌株液體發酵，通過粗分級分離、離子交換層析和凝膠過濾層析分離提純了一個分子量為31kda的絲氨酸蛋白酶，生物學測定表明其對大豆胞囊線蟲二齡幼蟲具有致死作用，同時測定了該酶理化特性，酶活力在75附近酶活力最高，隨著ph的增加酶的穩定性升高，與膽堿酯酶具有相似的ph曲線，對特異性底物aape （ suc - ala - ala - pro - glu - pna ）具有作用， ssi和ci - 2抑制該酶的活性。
  3. We used this water - soluble cationic polyelectrolyte pei as a soft cushion for biomimetic membranes in this chapter, and studied the microstructure of polymer - cushioned pure binary and trinary mixed lb and ls films of dimyristoyl phosphatidyicholine ( dmpc ). cholesterol ( chol ) and sphingomylin ( sph ) ( that is to say study the influence of pei cushion on the microstructure of the monolayers ) deposited from looppm pei water solution subphase by - a isotherms and tapping mode atomic force microscopy

    在本章中我們用這種極易溶於水的陽離子型聚合物pei為一軟墊，研究以此軟墊為基底的不同生物分子和它們不同種二元及三元混合單分子膜體系在含pei亞相上的相結構情況，初步的討論了它們以雲母為基底的is膜和lb膜的微結構或者說是該軟墊對單分子膜微結構的影響。
  4. The experiment system for studying the interaction of high intensity ultrashort pulse laser with solid targets, the facilities and methods for measuring ultrafast hard x - ray have been built

    首先建立了用於測量激光等離子體產生的超快硬x射線的、基於低本底hpge譜儀的單光子測量方法和設備。
  5. The soi is of crystal quality and the box is uniform in thickness, with the interfaces of si / sioa / si smooth and sharp. we have systematically studied the dependence of the formed soi structure on the process parameters, such as ion energy, implantation dosage, substrate temperature, as well as the annealing temperature. with xtem, sims, srp, rbs, ir, raman, aes, xps and other characterization tools, it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists

    本論文還系統地研究了不同注入劑量、注入能量、注入時基底溫度以及退火溫度對所形成soi結構性能的影響，藉助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等測試分析手段，我們發現，與傳統注氧隔離（ simox ）技術類似，存在著「劑量窗口」形成優質的soi材料，但在水等離子體離子注入方式中soi材料結構質量對劑量變化更為敏感，隨著注入劑量的增大， soi材料的埋層厚度增大而表層硅厚度減小。
  6. Furthermore, the growth and the study of self - organized quantum dots structures become more and more important recently, and the application of self - organization technique become wider and wider in this thesis, we address the theory of film growth and the growth technique firstly more, the ways and characteristics of surface detection are prescribed we mainly report the growth process, results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd, in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures, including the substrate cleaning, nitridation, the growth of buffer and the growth of gan and ain epilayer, is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover, we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature, we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )

    本論文主要論述了在espd - u裝置上，採用電子迴旋共振等離子體增強mocvd （ ecr - pamocvd ）方法，在藍寶石襯底上通過s - k模式自組裝生長gan aln量子點結構的生長工藝、結果及討論。而重點分析了自組裝生長量子點之前的aln外延層生長工藝，包括襯底清洗、氮化、緩沖層的生長和gan 、 aln外延層的生長；通過高能電子衍射、 x射線衍射和原子力顯微鏡測試，並且對這些測試結果進行了詳細的比較研究，得出了較優化的工藝條件，生長出了晶質較好、表面較平整的aln外延層；進而採用s - k模式自組裝生長了gan aln量子點結構。由於實驗裝置加熱爐溫度的限制，我們沒有能夠生長出原子級平滑的aln外延層表面，因而沒能夠生長出密度比較大和直徑比較小的量子點。
  7. In this thesis, we research the characters on the ion beam sputtering system, and prepare tiny films and cnx / tiny multilayers by ion beam sputtering. the best parameters of preparing cnx films are explored. we use the tiny films as template to promote the growth of cnx films

    本文對離子源的濺射特性進行了研究，採用離子束濺射法制備了tin _ y單層薄膜和cn _ x tin _ y多層薄膜，探索該法制備cn _ x薄膜的最佳工藝參數，並利用tin _ y薄膜為襯底以促進cn _ x薄膜的生長。
  8. Our group has prepared nanometer - scale metal films in layer structures on glassy carbon ( gc ) substrate by cyclic voltammetric deposition. by using co as probe molecule, we have revealed for the first time, abnormal ir effects ( aires ) on these layer nanostructured films. the alres consists of several abnormal ir features including the enhancement of ir absorption, the inversion of ir band direction ( anti - absorption ), and the increase of fwhm ( increase of the number of different adsorption sites )

    本研究小組採用電化學循環伏安電沉積法在gc基底上制備層狀納米結構金屬薄膜，以co作為分子探針，觀察到異常紅外效應（ aires ）光譜特徵，即co等探針分子發生紅外吸收增強、紅外譜峰方向倒反（反吸收）和譜峰變寬（振動能級離散程度增加） 。
  9. A uniform state ion chamber with double layers has been developed for distinct measurement in various n + y mixed fields in the fast neutron reactor. the cavity material is 6lif + 7lif. the inner wall material is 6lif and the outer wall material is 7lif

    根據let效應因子的測量結果和快中子堆y譜、中子譜等基本資料，以及~ 6lif和~ 7lif對中子響應靈敏度有較大差異這一特點，研製了以~ 6lif + ~ 7lif為空腔、 ~ 6lif為外壁、 ~ 7lif為內壁的具有雙層室壁結構的均勻固體電離室，並將其用於快中子脈沖堆n 、混合場區分測量，徹底剔除了熱中子的干擾。
  10. By the essential control of the initial stage of - material growth, the high - quality crystal films can be obtained. by using mocvd technology, studies of some kinds of methods such as hydrogen - terminated, nitridation, plasma - assisted, growth of two stages and sputtering buffer layers have been conducted. by measuring of xrd, pl, sem and tem, and analysis of spectra of xrd, raman scatting, oa, and pl at different temperatures, we observed that the crystal quality has been improved markedly

    本文利用mocvd技術，採用各種對si襯底處理的方法，如氫終止法、氮化法、等離子體轟擊方法、兩步生長法、濺射緩沖層法等進行了試驗與研究，通過x射線衍射技術（ xrd ） 、光致發光技術（ pl ） 、掃描電子顯微術（ sem ） 、透射電子顯微術（ tem ）等檢測，並對其x射線衍射光譜、拉譜光譜、吸收光譜及不同溫度下的光致發光光譜分析，發現外延晶體的生長質量得到了明顯提高。
  11. The basic idea for hierarchy - based method is that creating and maintaining a tree of clusters and sub - clusters according to some kind of criterion to measure the distance of clusters, the procedure will be sloped until some terminal conditions are satisfied. hierarchical clustering method can be further classified into agglomerative and divisive hierarchical clustering, depending on whether the hierarchical decomposition is formed in a bottom - up or top - down fashion. most hierarchical clustering methods can produce the better results when the clusters are compact or spherical in shape. but they do not perform well if the clusters are any shape or there are outliers. a main reason is that the most hierarchical clustering methods employ medoid - based measurement as distance between clusters

    基於層次方法的聚類的基本思想足：根據給定的簇間距離度量準則，構造利維護一棵由簇利子簇形成的聚類樹，直至滿足某個終結條件為止。根據層次分解是自底向上還是自頂向下形成，層次聚類方法可以分為凝聚的（ agglomerative ）和分裂的（ divisive ） 。人多數層次聚類演算法在緊密簇或球形簇結構下能夠產生較好的聚類效果。
  12. Several influence factors to result plasma drift in hainan were analyzed. in this paper the characteristics of ionospheric parameters variation were analyzed systematically and some new results in storm - time such as seasonal behaviors were obtained ; it is the first time to investigate the ionospheric drift behavior in hainan and some new results was obtained, the relationships between each two plasma drift velocity components in storm time in hainan were found and the electric filed variation in hainan ionosphere also was obtained ; the results also show that there are big differences of the ionosphere parameters bo and bl obtained from the data with that obtained from the iri - 2001 applied for hainan ; a new phenomena was found during a strong magnetic storm, that a layer with very strong electron density and density grad was found during the recovery phase of the storm, its horizontal scale is beyond 100km and temporal scale is about 2 hours, this phenomena repeated 3 times continuously. a type of negative disturbance in high and low latitude but positive disturbance in east - asia also has been found

    本文較為系統地給出了海南地區電離層的參數變化特徵，特別是得到了一些暴時與以往不同的季節特性；第一次給出了海南地區的電離層等離子體漂移特徵，發現等離子體漂移暴時擾動在三個方向上有內在的聯系，得到了電場變化曲線；研究結果還表明海南電離層的半厚指數和形狀參數等與國際參考電離層iri - 2001存在很大差別；通過對強磁擾動事件期間的參數變化特性分析發現，在磁暴恢復相期間海南地區電離層底部存在一個電子密度非常大的高密度區，高密度區底部電子密度梯度隨高度急劇增加，該區域的水平尺度可達100公里以上時間尺度約為2小時，連續出現過三次，這是一個在海南從來未發現的新現象；研究還發現了暴時東亞地區電離層擾動會出現高低緯負相而中緯正相的現象。
  13. Cubic nitride boron ( c - bn ) films have been prepared at room temperature ( 25 ) by radio frequency plasma enhanced pulsed laser deposition ( rf - pepld ), assisted with substrate negative bias. in this paper, we primarily studied the effect of laser energy density, radio frequency power, substrate bias and depositing time on the growth of c - bn films, and analyzed the formation process and mechanism of c - bn films deposited by rf - pepld method at room temperature

    本文採用偏壓輔助射頻等離子體增強脈沖激光沉積（ rf - pepld ）方法在常溫下（ 25 ）制備立方氮化硼（ c - bn ）薄膜，初步研究了薄膜沉積參數：激光能量密度、射頻功率、基底負偏壓和鍍膜時間對立方氮化硼薄膜生長的影響，並分析了常溫下用rf - pepld方法沉積立方氮化硼薄膜的形成過程和機理。
  14. In this paper ， first, the author drew some important conclusions by analyzing several technical factors and experimental conditions which would have great influence on the quality of diamond thin films during mpcvd process ， including gas proportion ， the power of microwave ， the plasma ' s location, the nucleation technique, etc. finally ， the author has successfully deposited nanocrystalline diamond thin films with 300nm crystal particles on the slick surface of silicon by using ch4 / h2 gases in the mpcvd system ， and the nanocrystalline diamond thin films was proved to have good field emission performance. all these researches will make the foundation for the field emission cathode of diamond films

    本論文中，作者分析了mpcvd方法中氣源成分比、微波功率、等離子體球的位置、成核技術等各種工藝條件對金剛石薄膜質量的影響，並總結得到了一些有意義的結論；同時，在自行研製的mpcvd沉積系統上，於4 - 7kpa 、 1000左右的熱力學條件下，採用ch4 / h2氣源氣氛在光滑的硅襯底上制備出了晶粒尺寸在300納米以下的納米晶金剛石薄膜，測試得到了較好的薄膜場致電子發射性能，為金剛石薄膜場致發射冷陰極的研究工作打下了實驗基礎。
  15. In this paper, we implanted mn + ion of different dose into undoped semi - insulating ( 100 ) gaas substrate then performed rapid thermal annealing in different temperature and time. studied the different annealing condition dependence of the samples " structure, electrical and magnetic properties and the relation of the mn + forms and these properties

    本課題採用離子注入的方法將不同劑量的mn ~ +注入到非摻雜半絕緣（ 100 ） gaas單晶襯底中，然後進行不同溫度和時間的快速熱退火處理，研究了不同的退火條件對樣品注入層的晶體結構、電特性和磁特性的影響以及mn ~ +在樣品中的存在狀態與這些性質之間的關系。
  16. In this study, high quality p - sic film is grown on si ( 100 ) by pecvd method at the substrate temperature of 400 ? 00 ?

    在本研究工作中，採用等離子體輔助化學氣相沉積（ pecvd ）法，在單晶si （ 100 ）襯底上，在襯底溫度為400 - 700的低溫下，得到了高質量的- sic薄膜。
  17. Secondary ion background

    二次離子本底
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