本徵半導體 的英文怎麼說

中文拼音 [běnzhǐbàndǎotǐ]
本徵半導體 英文
intri ic semiconductor
  • 本 : i 名詞1 （草木的莖或根）stem or root of plants 2 （事物的根源）foundation; origin; basis 3 （本錢...
  • 徵 : 名詞[音樂] （古代五音之一 相當于簡譜的「5」） a note of the ancient chinese five tone scale corre...
  • 半 : Ⅰ數詞1 （二分之一） half 2 （在 中間的） in the middle; halfway 3 （比喻很少） very little; the l...
  • 導 : 動詞1. （引導） lead; guide 2. （傳導） transmit; conduct 3. （開導） instruct; teach; give guidance to
  • 體 : 體構詞成分。
  1. In this dissertation, by virtue of self - developed test system, the studies on the optical and electric properties of oled of little molecule with different material, configuration manufactured with different processes have been presented. concepts of chromatics and the mechanism of carrier transportation in the semiconductor device have been applied here to qualitatively analysis and interpret the result of measurement. some interesting conclusions have been given which will be helpful in the further optimization of the performances of oled

    在oled研究過程中，對器件性能的表徵工作起到十分重要的作用，本文利用自主開發的測試平臺（包括軟體、硬體的搭建） ，對不同材料、結構、工藝的小分子oled器件進行了光學、電學性能的測試和評估，並依照色度學、半導體電輸運等理論成功的對測試結果作出了定性分析，揭示了制約器件工作性能的相關因素，為器件性能的進一步優化奠定了基礎、指明了方向。
  2. Standard methods for measuring conductivity type of extrinsic semiconducting materials

    非本徵半導體材料導電類型測試方法
  3. In the paper, we introduced how to draw layout based on the standard of 0. 6 m, 5v cmos given by csc semiconductor ltd and finish the work in candence

    晶元版圖的設計中採用了綠華半導體公司的0 . 6 m ， 5vcmos工藝庫，工藝基本特徵為多晶硅柵，單層金屬布線。
  4. Extrinsic semiconductor single crystals - measurement of hall mobility and hall coefficient

    非本徵半導體單晶霍爾遷移率和霍爾系數測量方法
  5. Intrinsic semiconductors are those in which the electrical behavior is based on the electronic structure inherent to the pure material

    本徵半導體是電學性質基於純材料的電子結構的半導體。
  6. Semiconductor luminescence materials and devices were developed as one of semiconductor technology in 1960. the luminescence devices made with the materials had developed quickly. but the pure semiconductor materials could not better because the luminescence efficiencies were lower. doping is very important in order to improve the luminescence efficiency

    半導體發光材料和器件是六十年代發展起來的半導體技術中的一個分支，單一的純凈本徵半導體的性能往往不能滿足實際的需要，發光效率或發光幾率低，發光強度弱，提高發光效率的有效途徑就是進行材料的摻雜改性。
  7. The article intend to analysis the precess, character and motivion of development in traditional street space in which contain abundant cultural heritage. through investigation the writer should analysis the characte r, form and the relationship with each other, and furthermore find the pattern of the space in the fulture. what the most important is to summarize the spitits in traditional street space, such as activition, fuction, cultural elements, social customs and quatity of space. in order to put these elements to the exploit of new street space and find how these elements should be used, the writer regards some streets as the examples such as wenming street in kunming, xinhua street in lijiang jianshe rode in luxi. through research the writer find problems which exist in not only traditional but also in new street and express individual viewpoint about how to solve the problems. there are several ways to keep the new street exploition success. in the first place, we shoule know about all kinds of influences and synthesized elements. secondly mastering the mechanism of the development by oneself is indispensable. in the last place, it is necessory not to imitate some certain model which is plausible in other place. in the l ast of the article, the writer uses a new project to further illustrate the way to put the theory what have mentioned above into the practice

    並從自然，社會，經濟及社會文化方面分析產生的根源，發展動力，其次通過實際調查，對現有傳統商住的物質形態要素進行分析，從商空間及住空間的基本特徵，型制入手，探索傳統商住街區的空間形態，結構組成，商與住空間關系，空間性質及空間如何相互轉化。以此來尋找傳統商住街區物質形態特徵，同時結合具體實例強調在傳統商住街區改造、新區的規劃設計中應當重視非物質要素內涵的提取、如活動者及社會結構、功能意義、空間品質、文化氣息，保持歷史傳統的延續性的必要性與可行性。在文章的後半部分，有針對性的對遺留下來的傳統商住街區-昆明文明街、麗江新華街、瀘西建設路的物質形態特徵和非物質形態特徵的分析，找出現存的問題，並針對問題發表個人的觀點，指出引導現代商住街區的開發與改造中，保持形態合理發展的正確途徑是了解影響形態發展與演變的各種因素及其綜合作用，把握好形態演交的內在機制，而不應刻意追求某種特定的模式。
  8. In the far from cutoff approximation the energies of empty cavity modes versus radii of three - dimension semiconductor microcavity are evaluated

    摘要半導體微腔中腔模和激子模藕合形成腔極化激元，三維微腔中由於橫向限定腔模和激子模形成離散化的本徵模式。
  9. The scope of our business teco was awarded the tender of taiwan s national health insurance ic card project in 2001, which led to the establishment of smartcard system division. as the prime contractor, teco successfully completed the mission from the bureau of national health insurance bnhi of taiwan, distributing 22 million healthcare smart cards to taiwanese citizens within 25 months

    2001年4月，東元電機結合德國g d日本hitachi等國際知名廠商與國內精英團隊共同標得衛生署健保局之全民健保ic卡專案，並成立智能卡事業部，此一標案的獲得，代表多年來東元在高科技方面投入的努力，獲得肯定，也象徵東元集團跨入高科技的半導體業與知識經濟服務業的重要里程碑。
  10. For the coupling between the laser diode and the tapered single - mode fiber, the overlap integral is used to compute the coupling efficiency on the basis that the laser diode outputting mode field and the fiber eigenmode field is approximated to basic - mode gauss field. and based on the same approximation, the coupling efficiency between the semi - tapered fiber and the laser diode is calculated by using the ray - traced method. the parameters are analyzed for the effect on the coupling efficiency and give the theory foundation to optimize the design of the tapered fiber coupling system

    首先通過對半導體激光器輸出模式場和光纖本徵模式場的高斯基模近似，利用交疊積分計算了錐形單模光纖與激光器的耦合效率問題；其次依據以上近似，利用光線跡蹤法計算了半錐形多模光纖與激光器的耦合效率問題，給出各個參數對耦合效率的影響和作用，為優化設計錐形光纖耦合系統提供了理論依據。
  11. Then after a semi - rigid joint behavior can be modeled as a finite stiffness rotation spring, base on rotation and displacement equation derive the element stiffness matrixes with semi - rigid connections where the effects of jointed flexibility and shear forces in the connection deformations have been considered in and fixed - end forces are modified. finally, a program for calculating system reliability of semi - ridge steel frames with monte carlo method and finite element analysis has compiled for calculating and analyzing. by calculating results of several examples for steel frame in semi - rigid joints case show the change of joint stiffness and other kinds of factors affect the system

    接著本文在介紹和分析半剛性連接彎矩和轉角關系模型的基礎上，用帶有轉動剛度的彈簧表徵半剛性連接，推導出半剛性連接的剛度矩陣，對固端力進行修正，同時考慮了剪切變形的影響，編制了半剛接鋼結構平面框架的有限元程序bhpfl ，並在其基礎上編制了基於蒙特卡洛法的montecarlo - bhpfl有限元相結合的方法，進行體系可靠度的分析。
  12. Nanostructured bi2s3, cds and zns semi conductors with different sizes and morphologies were synthesized using hydrothermal, solvothermal and liquid - phase method at low temperature through changing reaction conditions. the products were characterized by x - ray diffraction ( xrd ), transmission electron microscopy ( tem ), selected area electron diffraction ( saed )

    本文利用水熱、溶劑熱等液相法，在低溫下通過改變反應條件制備了不同尺寸和形貌的bi _ 2s _ 3 、 cds和zns納米結構半導體材料，利用xrd 、 tem 、 saed等測試手段對每一種材料進行了表徵和分析。
  13. Xps measurement results exhibited that no detectable fe2 + existed in the compound of a ~ fe2os doped with sn4 +, which suggest that oxygen anions or cation vacancies not only can compensate the charge balance but also significantly enhance the gas - sensitivity of a - fe2o3 based gas sensors. ( 3 ) conductive type of a - fe2o3 doped with sn4 + is showed in the n - type by hall measurement and gas - sensitivity measurement. the results of measurements and characterizations suggest that the sensitive mechanism of the a - fe2o3 based nano - materials prepared by this work be the surface resistance controlled mode

    （ 3 ）首次進行了霍爾測量，並結合氣敏測試結果，從不同方面證實了摻錫- fe _ 2o _ 3納米半導體的導電類型是n型；綜合粉體的電導率?溫度曲線、元件的電阻?加熱電流特徵曲線、元件在不同氣氛下的電阻特性以及比表面積等測試表徵結果，得出本文所製成的- fe _ 2o _ 3基氣敏元件的氣敏機理特徵屬于表面控制型。
  14. However, the pure cdte films have high electrical resistivity and this is mighty unfavourable to improve the conversion efficiency of cdte solar energy cells, and the best way is to doping donor or acceptor in pure cdte films

    但本徵cdte薄膜均為高阻半導體，這對于提高cdte薄膜太陽能電池的光電轉換效率是極為不利的，要提高cdte薄膜的光電性能必須通過施主或受主的摻雜。
  15. The tio2, cds and cds - tio2 films on the common glass substrate were prepared, respectively, using ti ( oc4h9 ) 4, cd ( cooch3 ) 2 and scn2h4 as raw materials by sol - gel method. the influences of manifold preparing parameters ( such as the concentration of sol, the amount of the peg. the number of coatings, the heat - treated temperature and time ) on the structure and performance were studied

    本文採用溶膠-凝膠技術，以鈦酸丁酯、乙酸鎘和硫脲為原料，以普通玻璃片為載體，制備了納米tio _ 2薄膜、 cds薄膜和cds - tio _ 2復合半導體薄膜，研究了制備過程中多種制備參數（如溶膠的濃度，聚乙二醇（ peg ）的加入量，鍍膜層數，熱處理溫度及時間）對薄膜結構和性能的影響，採用x -射線衍射（ xrd ） 、掃描電鏡（ sem ） 、能譜分析（ edxa ） 、紫外-可見吸收光譜（ uv - vis ）等測試手段對各薄膜進行了結構和物性表徵。
  16. We have investigated the influence on the character of cdte thin films with different conditions and parameters. secondly, in normal temperature, cdte thin films are high resistance semiconductor, for improving its electricity capability, we commonly inject benefactor or acceptor impurities into the pure cdte thin films, the ion influx technique is a good method among many adulteration means. at present, the literatures on the doped cdte thin films by the ion influx technique have a fat lot reports

    本論文首先採用近距離升華法在不同基片上制備cdte薄膜，研究了不同工藝條件和參數對cdte薄膜性質的影響。其次，在常溫下，本徵cdte薄膜均為高阻半導體。為了改善其導電性能，通常向cdte薄膜中摻入施主或受主雜質，其中離子注入技術是摻雜方法之一。
分享友人
分享到 Line

分享到臉書