柱狀晶層 的英文怎麼說

中文拼音 [zhùzhuàngjīngcéng]
柱狀晶層 英文
layer of columnar crystals
  • 狀 : Ⅰ名詞1 （形狀） form; shape 2 （情況） state; condition; situation; circumstances 3 （陳述事件或...
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 層 : i 量詞1 （用於重疊、積累的東西 如樓層、階層、地層） storey; tier; stratum 2 （用於可以分項分步的...
  1. A white needle crystal was isolated and purified on systematic extraction of the alkaloid by silica gel column and gradient sublimation from oxytropis glabra

    摘要採用生物?系統提取、矽膠柱層析分離及梯度升華技術從小花棘豆乾草粉中分離出一種白色針狀結晶。
  2. It will be known from the obtained expression of the resolution of photoconductor that the column microstructure is benefit to reduce the carrier diffusion in the lateral direction and increase the resolution of the photoconductor

    這種各向異性的柱狀結構復合光導膜有利於減小光生載流子的橫向擴散長度，從而可以提高液晶光閥光導層的解析度。
  3. The principle and the application of liquid crystal light valve ( lclv ) and the development of the photoconductor of lclv have been reviewed in this paper. the growth mechanism of amorphous silicon film is analyzed. the resolution of the photoconductor that is affected by the lateral diffusion of the photo - carrier in photoconductor layer is also analyzed

    本文介紹了液晶光閥光導層的發展、液晶光閥的工作原理及應用，分析了非晶硅薄膜的生長機制以及載流子的橫向擴散對解析度的影響，詳細研究了nc - si a - si ： h柱狀結構復合光導層液晶光閥的制備工藝。
  4. The experiment proved the adjustments is effective. according to the fact that the structure of the film causes the wavelength shift, we prepared the shift - free polarizers at 1054nrn with plasma - iad

    根據膜層的柱狀多晶結構是引起工作波長漂移的主要因素，利用等離子體輔助沉積制備出了中心波長為1054nm的無漂移偏振膜。
  5. The reason why the existence of cr underlayers enhanced the pma energy of tbco films is that the existence of cr underlayers leads to forming the columnar structure and enhancing the inner stress in tbco films, thereby, enhancing the pma energy

    金屬cr底層增強tbco薄膜垂直磁各向異性的主要原因是：金屬cr底層的存在將可以使得tbco非晶垂直磁化膜內產生柱狀結構，而且會增強薄膜的內應力，從而使得其磁各向異性能增加。
  6. The transfer of the carrier in photoconductor is anisotropy owing to the column structure of the film is anisotropy. on the basis of the new concept suggested in this paper, the maximum diffusion length in the lateral direction of the photo - carrier in the photoconductor ( which is related to the resolution of lclv directly ) as function of conductivities of both in lateral and normal directions in the film can be obtained as the expression as following. the nc - si / a - si : h photoconductor of lclv deposited and crystallized at low temperature of exactly 250 c stack column structure by al inducing a - si : h

    本文根據柱狀結構存在各向異性的特點，並根據半導體物理知識，推出光導層光生載流子橫向最大擴散長度（該擴散長度與液晶光閥光導層解析度直接相關）與薄膜橫向和縱向電導率關系的表達式為：由於a - si ： h在al金屬的誘導作用下在不高於250的溫度下即開始晶化，本文對用金屬al誘導非晶硅晶化制備的nc - si a - si ： h薄膜進行研究。
  7. In this paper, the technical of the rubbing is also studied and good films are prepared. the lclv with nc - si / a - si : h columnar composite photoconductor is fabricated successfully in this work. the high quality image obtained by using nc - si / a - si : h column composite photoconductor lclv and shows the resolution about 5001p / inch

    本文系統研究了nc st a sth柱狀結構復合光導層液晶光閥的制備工藝條件，根據此工藝條件制備的液晶光閥的測試解析度達到500 … inch 。
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