柱狀晶結構 的英文怎麼說

中文拼音 [zhùzhuàngjīngjiēgòu]
柱狀晶結構 英文
columnar structure
  • 狀 : Ⅰ名詞1 （形狀） form; shape 2 （情況） state; condition; situation; circumstances 3 （陳述事件或...
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 結 : 結動詞（長出果實或種子） bear （fruit）; form （seed）
  • 構 : Ⅰ動詞1 （構造; 組合） construct; form; compose 2 （結成） fabricate; make up 3 （建造; 架屋） bui...
  • 結構 : 1 （各組成部分的搭配形式） structure; composition; construction; formation; constitution; fabric;...
  1. The results indicate that ( a ) before heat treatment, with the increasing of substrate temperatures, content of lower valency ( tij + ) decreases, the stoichiometric proportion of o / ti in all samples is about 2 ; the films have amorphous incompact columnar fiber structure, and with the increasing of substrate temperature, the size of columnar fiber increases ; the films have good hyalescence in visible range and great absorbability at the wavelength of 350nm ; optical constants of the films are calculated from the transmittance spectrums in visible range by mathematical analysis of the orders of interference, the results show that the refractive ind

    研究結果表明， （ a ）熱處理前，隨著基片溫度的增加，薄膜中的低價氧化鈦含量逐漸減少，化學計量比趨于o ti = 2 ；薄膜具有非晶態不緻密的柱狀纖維結構，柱狀纖維的尺寸隨基片溫度的升高而增加;薄膜在可見光范圍內透明，在波長為35onzn時嚴重吸收，利用干涉級次法分析了薄膜的光學常數，結果表明，薄膜的折射率隨基片溫度的升高而增加，根據計算結果得到了tioz薄膜在不同基片溫度下的折射率色散曲線。
  2. The influence of nano - al2o3 on the sintering and the properties of the si3n4 ceramics was researched in this paper. the samples with different amount of nano - al2o3 were obtained by using pressureless sintering at 1600, 1650, 1700 in the nitrogen atmosphere. the microstructure and the composition of the ceramics were determined by the means of x - ray, sem, micro - hardness meter etc. it is show that the sisty ceramics can be densified at 1650c to % percent of the theory density through the addition of nano - al2o3 ( the value could be 90 percent by other technique ). the crystalline growth of the cylindrical - si3n4 and the ratio of its longitude to its diameter are increased with the addition of nano - al2o3. a uniform microstructure and an fined crystal as well as more sialon phases can be obtained in the si3n4 ceramics through the addition of that

    實驗結果表明：在碳管爐中、氮氣保護下進行燒結，添加劑為納米al _ 2o _ 3粉末時，由於納米粉末的高活性、高燒結驅動力，在1650就可使si _ 3n _ 4完全地燒結，並使其緻密度可達理論密度的96以上（比其它工藝高6左右） ；同時，納米al _ 2o _ 3地加入大大促進了長柱狀? si _ 3n _ 4的生長和發育及柱狀晶長徑比的提高，使微觀結構均勻、細化，形成了更多力學性能優異的固體? sialon相，減少了不利於陶瓷材料性能的晶間玻璃相，凈化了晶界。
  3. Ito substrate with an smooth surface of 0. 2nm rms roughness measured by afm was obtained by the developed pre - cleaning processing procedure. mbe growth of znsxse1 - x thin films on ito coated glass substrates were carried out using zns and se sources. the xrd 9 / 29 spectra resulted from these films indicated that the as - grown polycrystalline znsxse1 - x thin films had a preferred orientation along the ( 111 ) planes

    採用分子束外延技術在ito導電玻璃上低溫沉積了zns _ xse _ （ 1 - x ）多晶薄膜，詳細研究了薄膜制備的工藝參數，在最佳沉積條件下，制備獲得了晶型為立方閃鋅礦，並具有（ 111 ）面高度定向生長結構的柱狀zns _ xse _ （ 1 - x ）多晶薄膜，其rms表面粗糙度最小可達1 . 2nm 。
  4. The effect of deposited condition, include substrate temperatures, different substrates and annealing on the structural properties of zno films has been studied in considerable detail. it is found that the optimal conditions to deposit zno are below : the substrate temperature of 450c, the substrate of sapphire. the sample on this condition is 0. 3491

    通過分析襯底溫度、不同襯底和退火對樣品結構的影響，得到了樣品的最佳制備條件：襯底溫度450 、藍寶石襯底，此條件下制備的樣品具有高度（ 002 ）取向性， （ 002 ）衍射峰半高寬僅僅0 . 3491 ，原子力顯微鏡（ afm ）分析表明zno薄膜具有密集堆積的均勻柱狀晶粒。
  5. Sem results show tin films appear compact and plane in different n2 partial pressure, and there is no big crystal grain appearance on the surface of tin films. tem and afm results tin films have the column structure, and the surfaces of the films are accumulated by crystal grain. in the second part of the thesis the effect of heat treatment processing on the optical properties and structure of the tin films is studied

    Tem測試結果顯示，薄膜表面是由tin晶體顆粒堆積在一起，呈柱狀結構afm測試結果表明， tin薄膜呈柱狀結構；在氮氣分壓較小時， tin薄膜表面比較平整，顆粒細小；隨著氮氣分壓的增加， tin薄膜表面顆粒逐漸增大；相同氮氣分壓下，氬氣分壓較小時制備的tin薄膜較為緻密。
  6. It will be known from the obtained expression of the resolution of photoconductor that the column microstructure is benefit to reduce the carrier diffusion in the lateral direction and increase the resolution of the photoconductor

    這種各向異性的柱狀結構復合光導膜有利於減小光生載流子的橫向擴散長度，從而可以提高液晶光閥光導層的解析度。
  7. The principle and the application of liquid crystal light valve ( lclv ) and the development of the photoconductor of lclv have been reviewed in this paper. the growth mechanism of amorphous silicon film is analyzed. the resolution of the photoconductor that is affected by the lateral diffusion of the photo - carrier in photoconductor layer is also analyzed

    本文介紹了液晶光閥光導層的發展、液晶光閥的工作原理及應用，分析了非晶硅薄膜的生長機制以及載流子的橫向擴散對解析度的影響，詳細研究了nc - si a - si ： h柱狀結構復合光導層液晶光閥的制備工藝。
  8. The experiment proved the adjustments is effective. according to the fact that the structure of the film causes the wavelength shift, we prepared the shift - free polarizers at 1054nrn with plasma - iad

    根據膜層的柱狀多晶結構是引起工作波長漂移的主要因素，利用等離子體輔助沉積制備出了中心波長為1054nm的無漂移偏振膜。
  9. The reason why the existence of cr underlayers enhanced the pma energy of tbco films is that the existence of cr underlayers leads to forming the columnar structure and enhancing the inner stress in tbco films, thereby, enhancing the pma energy

    金屬cr底層增強tbco薄膜垂直磁各向異性的主要原因是：金屬cr底層的存在將可以使得tbco非晶垂直磁化膜內產生柱狀結構，而且會增強薄膜的內應力，從而使得其磁各向異性能增加。
  10. The transfer of the carrier in photoconductor is anisotropy owing to the column structure of the film is anisotropy. on the basis of the new concept suggested in this paper, the maximum diffusion length in the lateral direction of the photo - carrier in the photoconductor ( which is related to the resolution of lclv directly ) as function of conductivities of both in lateral and normal directions in the film can be obtained as the expression as following. the nc - si / a - si : h photoconductor of lclv deposited and crystallized at low temperature of exactly 250 c stack column structure by al inducing a - si : h

    本文根據柱狀結構存在各向異性的特點，並根據半導體物理知識，推出光導層光生載流子橫向最大擴散長度（該擴散長度與液晶光閥光導層解析度直接相關）與薄膜橫向和縱向電導率關系的表達式為：由於a - si ： h在al金屬的誘導作用下在不高於250的溫度下即開始晶化，本文對用金屬al誘導非晶硅晶化制備的nc - si a - si ： h薄膜進行研究。
  11. In this paper, the technical of the rubbing is also studied and good films are prepared. the lclv with nc - si / a - si : h columnar composite photoconductor is fabricated successfully in this work. the high quality image obtained by using nc - si / a - si : h column composite photoconductor lclv and shows the resolution about 5001p / inch

    本文系統研究了nc st a sth柱狀結構復合光導層液晶光閥的制備工藝條件，根據此工藝條件制備的液晶光閥的測試解析度達到500 … inch 。
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