柵壓 的英文怎麼說

中文拼音 [zhàyā]
柵壓 英文
grid voltage; gate voltage柵壓電源 grid-voltage supply; 柵壓滯后 grid-voltage lag
  • 柵 : 柵名詞（柵欄） railings; paling; palisade; bars
  • 壓 : 壓構詞成分。
  1. Numerical simulations of compressible flow in cascade

    葉柵可壓縮流場的數值分析
  2. This article introduces briefly the process of design and characteristic of structure of db930 tube and discusses the main problems of technology and technique which was met during the manufacture and the measures having been adopted are emphatically. it discusses the solve measures in following six aspects : the filament current is too large, carbon deposits during the carbonizing of cathode, the capacitance between the first grid and the second grid is too large, transpiring happens inside the tube, the insulation resistance between the electrodes is too lower when the filament is on and the ability of bearing high voltage is too lower

    本文簡略地介紹了db930的設計過程及其結構特點，重點論述了在試制過程中遇到的主要工藝技術問題及解決問題的措施，圍繞解決燈絲電流大、陰極碳化時積碳、一柵和二柵之間的電容大、管內蒸散、熱態時極間絕緣低、耐高壓的能力差等六個方面的問題進行了論述。
  3. Source of electron gun grid bias

    電子槍柵偏壓電源
  4. I designed a measuring system which can measure the anode current 、 anode voltage 、 grid current and grid voltage at one time. working at manual mode the system can sever as a measuring instrument

    根據要求，設計一個場發射參數的測量系統，此系統，工作在手動方式下可以測量出某一時刻點的場發射的陽極電流、陽極電壓、柵極電流、柵極電壓。
  5. This voltage creates a field across the gate oxide, which causes the adjacent p substrate to invert to n-type.

    這一電壓在柵極氧化物層上產生一個電場，它導致毗鄰的P型襯底轉變成N型。
  6. Novel fiber optical bragg osmometer and its application study in civil engineering

    新型光纖光柵滲壓傳感器及其在土木工程中的應用
  7. The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward

    介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本徵參數、寄生參數對頻率特性的影響，提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用於雙極晶體管電路的跨導線性原理，提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。
  8. First, it was taken that a discuss about the effects of geometry parameters of each piezocrystal on direction parameters ( main lobe width, side lobe amplitude, elimination of grating lobes ), amplitude of ultrasonic pressure, element viberation pattern, mutual radiation among elements, efficient test regions, ability to keep accurate and near - field distance and so on. based on the direction of ultrasonic field in ulpa deduced by ourselves. in addition, on the base of integrating all kinds of factors, it was put forward that the principle and method for optimized design of geometry parameters of piezocrystals in ulpa transducer, and its design programme and interface were compiled

    首先在推導超聲相控線陣換能器聲場的指向性的基礎上，就各個晶片幾何參數對指向性指標（主瓣寬度、旁瓣幅度、消除柵瓣） 、聲壓幅值、陣元振動模式、陣元間互輻射、有效檢測區域、精確控制能力、近場長度等方面的影響進行了論述，並在綜合各方面影響的基礎上，提出了晶片幾何參數優化設計的原則和方法，編寫了設計程序和界面。
  9. A model of the interface state density distribution near by valence band is presented, and the dependence of the threshold voltage on temperature, the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics, transfer characteristics and effective mobility of sic pmosfets are analyzed. thirdly, the output characteristics and the drain breakdown characteristics are modeled with the procedure medici. the output characteristics in the room temperature and 300 ? are simulated, and the effects of gate voltage. contact resistance, interface state and other factors on sic pmos drain breakdown characteristics are analyzed

    提出了一個價帶附近的界面態分佈模型，用該模型較好地描述了sicpmos器件閾值電壓隨溫度的變化關系、 c - v特性曲線以及亞閾特性曲線；分析了源漏寄生電阻對sicpmos器件輸出特性、轉移特性以及有效遷移率的影響；論文中用模擬軟體medici模擬了sicpmos器件的輸出特性和漏擊穿特性，分別模擬了室溫下和300時sicpmos器件的輸出特性，分析了柵電壓、接觸電阻、界面態以及其他因素對sicpmos擊穿特性的影響。
  10. Charge pump circuits that make use of charge accumulation in the capacitor can pump charge upward to produce voltage higher than the regular supply voltage, and they are widely used in memory circuits, such as flash memory, for the programming and erasing of the floating - gate devices

    電荷泵是一種運用電荷在電容中的積累來產生高壓（高於電源電壓）的電路，它廣泛應用在存儲器電路中，諸如flashmemory ，用於對懸浮柵器件進行寫或擦除操作。
  11. By comparing and analyzing the advantages and disadvantages of three kinds of voltage reference circuits, type of current density ratio compensation 、 weak inversion type and type of poly gate work function, a cascode structure of type of current density ratio compensation is chosen to form the core of voltage reference circuit designed in this paper. applying the negative feedback technology, an output buffer and multiply by - 2 - circuits are designed, which improve the current driving capability

    然後通過比較和分析電流密度比補償型、弱反型工作型和多晶硅柵功函數差型三種帶隙電壓基準源電路結構的優缺點，確定了電流密度比補償型共源共柵結構作為本設計核心電路結構，運用負反饋技術設計了基準輸出緩沖電路、輸出電壓倍乘電路，改善了核心電路的帶負載能力和電流驅動能力。
  12. The innovation is that a ring bar sprayed bubbling gas distributing device is installed at the bottom of the tower, which has novel effects of leveling off gas and decompressing, cooling and dust removal, highly effective absorption, hydraulic stiring and so on at the same time

    其創新點是在塔的下部嵌入了一個環柵噴射鼓泡式進氣裝置，其新穎之處體現于：煙氣穩流減壓，冷卻除塵，高效吸收，氣力攪拌等功能可在環柵通道內一氣呵成。
  13. Experimental research of the fbg stress sensor

    光纖光柵壓力傳感器實驗研究
  14. A novel sampling switch with improved linearity

    比柵壓自舉開關提高了
  15. Slowly - drop gate voltage and softly turn - off principles are explained in this article, specific parameters are also listed

    摘要闡述了軟降柵壓和軟關斷的過電流保護原理，列出具體的保護時序參數。
  16. A particular over - current protection and drive circuit is given, the impact of resistance between gate and emitter on gate voltage dropping is discussed, and an adjustable gate - emitter resistance circuit is put forward

    設計了過電流保護驅動電路，討論了柵射集電阻對降柵壓過程的影響，並提出一種可變柵射集電阻電路。
  17. In gan hemt drain pulse current collapse experiments, drain current under pulse condition collapsed about 50 % than direct current condition and the pulse signal frequency affected little on current collapse. when gate voltage is small, the relationship between pulse width and drain current is i0 ( + t / 16 )

    在ganhemt漏極脈沖電流崩塌測試中，發現脈沖條件下漏極電流比直流時減小大約50 % ;脈沖信號頻率對電流崩塌效應影響較小;當柵壓較小時，隨著脈沖寬度的改變漏極電流按i0 （ + t / 16 ）的規律變化。
  18. A novel fiber bragg grating pressure sensor with high sensitivity

    一種新型高靈敏度光纖布拉格光柵壓力傳感器
  19. Then, the principle and technique for temperature compensation are given when we use fbg as strain sensor. secondly, according to the pressure sensing principle, a novel pressure sensor based on circular plate diaphragm - equal strength cantilever is presented

    其次，以光纖bragg光柵應變傳感特性為基礎，結合應變式壓力傳感器的設計方法，提出一種基於平膜片-等強度梁的光纖bragg光柵壓力傳感器的設計方案。
  20. Research on the pressure sensing mechanism of fiber bragg grating

    光纖bragg光柵壓力傳感機理研究
分享友人
分享到 Line

分享到臉書