柵壓電源 的英文怎麼說

中文拼音 [zhàyādiànyuán]
柵壓電源 英文
grid voltage supply
  • 柵 : 柵名詞（柵欄） railings; paling; palisade; bars
  • 壓 : 壓構詞成分。
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 源 : 名詞1. （水流起頭的地方） source （of a river）; fountainhead 2. （來源） source; cause 3. （姓氏） a surname
  • 電源 : source; current source; electric source; power pack; power supply; power source; source of power ...
  1. Source of electron gun grid bias

    電子槍柵偏壓電源
  2. The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward

    介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本徵參數、寄生參數對頻率特性的影響，提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用於雙極晶體管電路的跨導線性原理，提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。
  3. A model of the interface state density distribution near by valence band is presented, and the dependence of the threshold voltage on temperature, the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics, transfer characteristics and effective mobility of sic pmosfets are analyzed. thirdly, the output characteristics and the drain breakdown characteristics are modeled with the procedure medici. the output characteristics in the room temperature and 300 ? are simulated, and the effects of gate voltage. contact resistance, interface state and other factors on sic pmos drain breakdown characteristics are analyzed

    提出了一個價帶附近的界面態分佈模型，用該模型較好地描述了sicpmos器件閾值電壓隨溫度的變化關系、 c - v特性曲線以及亞閾特性曲線；分析了源漏寄生電阻對sicpmos器件輸出特性、轉移特性以及有效遷移率的影響；論文中用模擬軟體medici模擬了sicpmos器件的輸出特性和漏擊穿特性，分別模擬了室溫下和300時sicpmos器件的輸出特性，分析了柵電壓、接觸電阻、界面態以及其他因素對sicpmos擊穿特性的影響。
  4. Charge pump circuits that make use of charge accumulation in the capacitor can pump charge upward to produce voltage higher than the regular supply voltage, and they are widely used in memory circuits, such as flash memory, for the programming and erasing of the floating - gate devices

    電荷泵是一種運用電荷在電容中的積累來產生高壓（高於電源電壓）的電路，它廣泛應用在存儲器電路中，諸如flashmemory ，用於對懸浮柵器件進行寫或擦除操作。
  5. By comparing and analyzing the advantages and disadvantages of three kinds of voltage reference circuits, type of current density ratio compensation 、 weak inversion type and type of poly gate work function, a cascode structure of type of current density ratio compensation is chosen to form the core of voltage reference circuit designed in this paper. applying the negative feedback technology, an output buffer and multiply by - 2 - circuits are designed, which improve the current driving capability

    然後通過比較和分析電流密度比補償型、弱反型工作型和多晶硅柵功函數差型三種帶隙電壓基準源電路結構的優缺點，確定了電流密度比補償型共源共柵結構作為本設計核心電路結構，運用負反饋技術設計了基準輸出緩沖電路、輸出電壓倍乘電路，改善了核心電路的帶負載能力和電流驅動能力。
  6. Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet

    基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高
  7. For the demand of output swing, the bias is provided by high - swing cascode current mirrors

    為了獲得高輸出擺幅，設計低壓共源共柵電流鏡為運放提供偏置。
  8. General specification for the grid control travelling wave tube combined high voltage power supply of airborne radar

    機載雷達用柵控行波管組合高壓電源通用規范
  9. In this paper, the theory of negatively charged surface states is used to investigate dynamic breakdown characteristics and the increase of gate - drain breakdown voltage as well as the reduction of saturated drain - source current after sulfur passivation. the measure which can improve the stability of sulfur passivation is proposed

    本論文通過對gaasmesfet擊穿機理和硫鈍化機理的研究，用負電荷表面態理論，解釋了gaasmesfet動態擊穿特性及硫鈍化后柵漏擊穿電壓增大、源漏飽和電流減小的機理，提出了改善硫鈍化穩定性的措施。
  10. We also studied some characteristics of sidagating effect using mesfet fabricated in planar boron implanted process including photosensitive, hysteresis, influence of sidegating effect on mesfet threshold voltage, influence of drain - source voltage on sidegating threshold voltage, influence of exchanging drain and source electrode on sidegating threshold voltage, relation between sidegating threshold voltage and the distance between side - gate and mesfet, relation between sidegating effect and floating gate, and so on

    本文還採用平面選擇離子注入隔離工藝，開展了旁柵效應的光敏特性、遲滯現象、旁柵效應對mesfet閾值電壓的影響、 mesfet漏源電壓對旁柵閾值電壓的影響、漏源交換對旁柵閾值電壓的影響、旁柵閾值電壓與旁柵距的關系、旁柵效應與浮柵的關系等研究。
  11. On the one hand, the design uses low voltage cascode op framework to improve its gain ; on the other hand, it applies self - bias and cascode structure to the whole sensing circuit. by using the improved method, we have successfully obtained low power consumption, low offset, high linear and high psrr ptat current generator under low power supply

    在電路設計上一方面改進運放結構，採用低壓共源共柵結構以提高其增益，另一方面整體傳感電路採用自偏置結構和共源共柵電流鏡結構，在低電源電壓下成功設計了低功耗、低失調、高線性度和高電源電壓抑制比的ptat電流產生電路。
  12. The effects of the operation temperatures, gate voltages, drain - source voltages and magnetic field upon the characteristic of device are analyzed in detail. coulomb blockade and single electron tunneling are observed in the devices. 3

    詳細地分析了工作溫度、柵極電壓、漏源電壓和磁場對其特性的影響，觀測到明顯的庫侖阻塞效應和單電子隧穿效應，器件的工作溫度可達到77k以上。
  13. The thesis has done the widespread investigation and study to the domestic and foreign ’ s technologies of analogy low voltage and low power, and analyzes the principles of work, merts and shortcomings of these technologies, based on the absorption of these technologies, it designs a 1. 5v low power rail - to - rail cmos operational amplifier. when designing input stage, in order to enable the input common mode voltage range to achieve rail - to - rail, it does not use the traditional differential input pair, but use the nmos tube and the pmos tube parallel supplementary differential input pair to the structure, and uses the proportional current mirror technology to realize the constant transconductance of input stage. in the middle gain stage design, the current mirror load does not use the traditional standard cascode structure, but uses the low voltage, wide - swing casecode structure which is suitable to work in low voltage. when designing output stage, in order to enhance the efficiency, it uses the push - pull common source stage amplifier as the output stage, the output voltage swing basically reached rail - to - rail. the thesis changes the design of the traditional normal source based on the operational amplifier, uses the differential amplifier with current mirror load to design a normal current source. the normal current source provides the stable bias current and the bias voltage to the operational amplifier, so the stability of operational amplifier is guaranteed. the thesis uses the miller compensate technology with a adjusting zero resistance to compensate the operational amplifier

    本論文對國內外的模擬低電壓低功耗技術做了廣泛的調查研究，分析了這些技術的工作原理和優缺點，在吸收這些技術成果基礎上設計了一個1 . 5v低功耗軌至軌cmos運算放大器。在設計輸入級時，為了使輸入共模電壓范圍達到軌至軌，不是採用傳統的差動輸入結構，而是採用了nmos管和pmos管並聯的互補差動輸入對結構，並採用成比例的電流鏡技術實現了輸入級跨導的恆定;在中間增益級設計中，電流鏡負載並不是採用傳統的標準共源共柵結構，而是採用了適合在低壓工作的低壓寬擺幅共源共柵結構;在輸出級設計時，為了提高效率，採用了推挽共源級放大器作為輸出級，輸出電壓擺幅基本上達到了軌至軌;本論文改變傳統基準源基於運放的設計，採用了帶電流鏡負載的差分放大器設計了一個基準電流源，給運放提供穩定的偏置電流和偏置電壓，保證了運放的穩定性;並採用了帶調零電阻的密勒補償技術對運放進行頻率補償。
  14. The chip is accomplished in the full cooperation with other team members, the author pays particular attention to the analysis of the whole chip architecture and three sub - block design : transconductance amplifier ( ota ), voltage reference and current reference. based on existed technologies, a new high order temperature compensated voltage reference and a creative current reference with high order temperature compensation are shown respectively. the author simulated all the sub - block and whole chip by hspice

    該晶元的設計是由小組成員共同完成，本人主要負責了總體電路的分析、聯合模擬驗證及以下三個子電路的設計: 1 、跨導放大器，詳細分析了bandgap跨導放大器輸入級的動靜態特性及其優缺點，並結合系統要求，設計了一種與cmos工藝相兼容、可替代bandgap跨導放大器的低壓共源共柵跨導放大器。
  15. In this paper, a three phases high - voltage power mos gate drive integrated circuit has been researched and designed successfully. it is a typical spic, which could be widely used in high power motor control and switching power supply applications. the design goal of the circuit are v0ffset ( max ) is 500v, ia ( m ~ ) is 1 a, the highest frequency of operation ( f ( ~ x ) ) is 100khz

    本文研製成功了一種可廣泛用於大功率電機控制、開關電源等應用中的spic電路?三相高壓功率mos柵驅動集成電路，其設計指標要求為：最高偏置電壓（ voffset （ max ） ）為500v 、最大輸出電流（ i _ o （ max ） ）為1a 、最高工作頻率為100khz 。
  16. The shanghai leishi lighting co, . ltd is a collection of research, development, production, marketing, “ green lighting appliances, ” which integrated modern enterprises, the company ' s electronic energy production, electronic ballast and electronic transformers, tongdeng, low voltage supply, the grid supply, jinludeng, such as light - series of products, product quality have reached the international advanced level, and widely used in hotels, shopping centres, hotels, office off as, residential lighting and other projects

    上海雷士照明有限公司是一家集研究、開發、生產、銷售「綠色照明電器」為一體的現代化型企業、公司生產的電子節能燈，電子鎮流器和電子變壓器，筒燈、低壓射燈、格柵射燈、金鹵燈、光源等系列產品，產品質量均已達到國際先進水平，並廣泛應用於酒店、商場、賓館、辦公場所、住宅等照明工程。
  17. In this paper, a phase shifting pulse width modulated ( pwm ) soft switching high voltage invert power supply has been developed with the use of the principle of advanced invert technique and the new type of power semi - conductor device - insulated gate bipolar transistor ( igbt )

    本文採用最新的逆變思想與新型的開關器件?絕緣柵型雙極晶體管（ igbt ） ，研製出了移相式pwm軟開關高壓逆變電源。逆變技術發展至今，已經逐漸向大功率方向發展。
  18. During the course of modeling ldmos, the paper puts forward the method in which maxwell function in the static system is applied in analysis compute of ldmos threshold voltage. schwarz - chritoffel transformation method is used to solve the gate self - capacitance with limited size. at the same time, it also provides the method which computes the drain and source self - capacitance by conformal transformation and the equivalent - voltage sharing - charge model

    在對ldmos的建模過程中，本文提出了將靜電系統中麥克斯韋方程用於ldmos閾值電壓的分析計算的方法，引入了許瓦茲-克利斯多菲變換來求解了有限尺寸的柵自電容，並提出了用保角變換和等電壓電荷共享模型來計算漏與源的自電容的方法。
  19. Hvdc light is a kind of new dc transmission technology developed from the traditional hvdc, with voltage source converter ( vsc ) and igbt as main components. the basic principles of vsvpwm are studied, and an approach to simulate vsvpwm based on pscad / emtdc is put forward in this thesis

    輕型高壓直流輸電（ hvdclight ）技術是在傳統直流輸電基礎上發展起來的一種新型輸電技術，其主要部件是以絕緣柵雙極晶體管構成的電壓源換流器（ vsc ） 。
  20. According to the following design theory : the dsp calculates in real time and produces three phases spwm waves to control the on or off of the 6 igbts in ipm respectively. ipm then inverts the commutated single phase direct current ( insulated gate bipolar transistor ) into three phases alternating current. when modulated signals of spwm are changed, the on - off time of switches also changes, so as to the voltage and frequency of output signals

    本文提出了一種基於dsp （數字信號處理器tms320f240 ）的通用的三相間接變頻電源系統，利用分段同步調製法和混合查表法，實時計算不同頻率下的采樣周期、電壓幅值、輸出脈寬，產生雙極性spwm波形，經驅動放大後用于ipm （ intelligentpowermodule ）中的絕緣柵雙極型晶體管柵級驅動，以控制電源的輸出電壓和頻率，實現變頻電源的智能數字控制。
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