It influences the miaow thiazole quinoline to lose slowly that the experiment is drawn the pharmaceutical loses slowly the factor of performance has temperature mainly, density, the membrane time in advance, and design many group ' s simulation systems for different influence of these three factors, is it is it should lose pharmaceutical to lose pharmaceutical slowly one positive pole type, lose performance is it is it form space location hinder after the membrane to absorb to come from mainly slowly slowly to appear to prove, thus isolated the carbon steel base body and corrode the medium
實驗得出影響咪唑啉緩蝕劑緩蝕性能的因素主要有溫度,濃度,預膜時間,並針對這三個因素的不同影響設計了多組模擬體系,驗證出該緩蝕劑是一種陽
極型的緩蝕劑,緩蝕性能主要來自於吸附成膜后形成空間位阻,從而隔離了碳鋼基體和腐蝕介質。
Over the induction process cell body became increasing spherical and retractile, exhibiting a typical neuronal perikaryal appearance. western blot a - nalysis indicated that cells exhibited increased expression of the neuronal marker nse after 5h of bfgf, atra treatment
免疫細胞化學顯示在加人bme5小時後部分細胞胞體收縮變圓,胞質呈nse染色強陽性,細胞呈有較長突起的雙
極,多
極型。
The analysis of potential along the channel of the unipolar organic static induction transistor
單
極型有機靜電感應三
極體溝道縱向電勢分析
In the father factor, stephan poulter lists five styles of fathers - super - achieving, time bomb, passive, absent and compassionate mentor who have powerful influences on the careers of their sons and daughters
他在書中列舉了能對子女的職業生涯產生重要影響的5種類
型的父親功成名就
型定時炸彈
型心態消
極型漫不經心
型和富有同情心或導師
型。
The analysis of the three parameters indicates that the ota designed and improved in the dissertation is better than classical bipolar otas in terms of
三項指標的分析表明,論文所設計的改進的ota的跨導在穩定性方面比經典的雙
極型ota具有更好的性能。
Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da1162
電子元器件詳細規范. 3da1162
型硅npn高頻放大管殼額定的雙
極型晶體管
Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da1722
電子元器件詳細規范. 3da1722
型硅npn高頻放大管殼額定的雙
極型晶體管
Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da 2688
電子元器件詳細規范. 3da2688
型硅npn高頻放大管殼額定的雙
極型晶體管
Semiconductor devices - discrete devices. part 7 : bipolar transistors. section four - blank detail specification for case - rated bipolar transistors for high - frequency amplification
半導體器件分立器件第7部分:雙
極型晶體管第四篇高頻放大管殼額定雙
極型晶體管空白詳細規范
Development on the 10kv solid - state switch
絕緣柵雙
極型晶體管固體開關的研製
Enhancing the management to negative type of cadres
加強對消
極型幹部的管理
Recent progress in sige materials and relevant bipolar devices
材料及其在雙
極型器件中的應用
Test methods for bipolar transister dc parameter testers
雙
極型晶體管直流參數測試儀.測試方法
Insulated gate bipolar transistor modules arm and pair of arms
絕緣柵雙
極型晶體管模塊.臂和臂對
Failure analysis of analog device resulted by electrostatic discharge
雙極型半導體電路靜電損傷失效分析