橫向電壓 的英文怎麼說

中文拼音 [héngxiàngdiànyā]
橫向電壓 英文
transverse voltage
  • 橫 : 橫形容詞1. （蠻橫; 兇暴） harsh and unreasonable; perverse 2. （不吉利的; 意外的） unexpected
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 壓 : 壓構詞成分。
  • 橫向 : broadwise; infeed; crossrange; abeam;transverse; transverse direction; cross; crosswise; lateral;...
  • 電壓 : voltage; electric tension; electric voltage
  1. Variation ratio of dimensional after water rinse, ultimate strength, neps and pile, tearing resistance, bursting strength, joint strength, commissure ' s swerve strength, fabric shift ( slip ), ventilate degree, elasticity ( resilient rate / deformation rate ), anti - water permeability ( hydrostatic pressure ), extension and resilience, abrasive resistance, gets wet the nature, hydroscopicity, stock ' s transverse ductility, fire resistance, antistatic

    水洗尺寸變化率（縮水） ，斷裂強力，起毛起球，撕破強力，彈子頂破強力，脹破強度接縫強力，縫口脫開程度，紗線滑移性能（滑脫） ，透氣量，彈性（回復率/變形率） ，抗滲水性（靜水壓） ，延伸及回復性，耐磨性，沾水性，吸水性，襪子橫向延伸，阻燃性能，抗靜電。
  2. The fluctuating mangnetic field cutting across the turns or loops of wire of the secondary coil sets up an electrical pressure or voltage in these loops.

    起伏變化的磁場橫向切割著次極線圈的線匝和線環時，會在這些線環中引起電壓。
  3. The fluctuating magnetic field cutting across the turns of loops of wire of the secondary coil sets up an electrical pressure or voltage in these loops.

    起伏變化的磁場橫向切割著的次級線圈的線匝或線環時，會在這些線環中引起電壓。
  4. During the research of the novel high - voltage soi lateral structure, we established its blocking theory based on poisson equation, which classifies its blocking mechanism by describing the potential distribution in the drift region very well when the device is in the blocking state

    在新型橫向高壓器件結構tsoi的研究中，本文通過二維泊松方程建立其解析理論，正確描述了漂移區中電場的分佈，並闡明其耐壓機理。
  5. For strained si pmosfets, the hole mobility is not only determined by the tensity of strain, but also related to the strain types, which are uniaxial compressive strain and biaxial tensile strain. when electric field is high enough, the hole mobility will be deteriorated in pmosfets under biaxial tensile strain, however, in the case of uniaxial compressive strain, the deterioration will never occur

    經模型分析發現，應變硅pmosfet空穴遷移率與應力作用方式有如下關系:當橫向電場較高（ > 5 105v / cm ）時，雙軸張應力作用下的應變硅pmosfet的空穴遷移率將發生退化，而單軸壓應力器件則不會受到影響。
  6. The simulation results indicate, deep - trench junction termination with certain width, depth and filling with isolated dielectric can increase the avalanche breakdown voltage of devices to above 95 % of the ideal value

    結果表明：具有一定寬度、深度且填充絕緣介質的深阱結終端結構，阻止了結的橫向擴展，並能將器件的雪崩擊穿電壓提高到理想值的95以上。
  7. Based on the theories of hybrid / mixed finite element method, the generalized energy functional including stress, mechanical displacement, electric displacement, electric field and electric potential is used, with the electric - potential relations and the constitutive equations of piezoelectric materials constrained, hybrid energy functional including mechanical displacement, electric potential and stress is gained. moreover, splitting in - plane components and transverse components, the mixed energy functional in which mechanical displacement, transverse stresses and electric potential as basic variables is derived. with the use of surface stress parameters of sub - elements, the continuity of transverse stress at interfaces between layers is obtained

    在回顧雜交混合有限元理論的基礎上，從包括位移、應力、應變、電勢、電位移、電場強度六個未知量的廣義壓電材料能量泛函出發，通過約束電場強度?電勢關系、應力與應變及電場強度的關系，得到僅包括位移、電勢、應力三個未知量的雜交變分泛函，利用一般層合板的雜交混合變分原理，分離面內分量和橫向分量，導出以位移、橫向應力、電勢為未知量的壓電層合板的修正變分泛函，作為壓電層合板的雜交元列式的理論基礎。
  8. Several models of bonded dissimilar materials with interface edges are calculated. displacement, electrical potential, singular stress fields and singular electrical displacement fields near a singular point are deduced by the eigenfuntion expansion method based on the general solution of the spatial axisymmetric problem of the transversely isotropic piezoelectric media. a generally axisymmetric interface edge of bimaterials with arbitrary interface angle and joining angle is analyzed theoretically by using this method

    在此基礎上，對具有任意界面角和結合角的橫觀各向同性雙壓電材料空間軸對稱界面端一般模型的軸對稱變形問題進行了理論分析，給出了該模型界面端的奇異性特徵方程以及界面端附近的位移場、電勢、奇異應力場和奇異電位移場。
  9. Specifications for variable - ratio transformers having current collectors which are moved transversely in the direction of the windings

    裝有可在繞線方向橫向移動集電器的可調無線電變壓器
  10. Lateral high - voltage power device ldmos has advantages of high - voltage, large gain, wide dynamic range, low distortion and compatibility with low - voltage circuit process

    橫向高壓功率器件ldmos有耐高壓、增益大、動態范圍寬、失真低和易於和低壓電路工藝兼容等特點。
  11. The expression can be used in calculation for relationships of the input voltage, output voltage and device geometry parameter

    用漸近解的分析方法對所求到的解進行簡化，導出了硅橫向壓阻效應四端壓力傳感器的輸出電壓表達式。
  12. Based on the theory of glow discharge, the angle distribution of electron and the recombination process are simulated by adopting monte carlo method. the doping process of n - type diamond film is investigated by this method for the first time. the results indicate : 1 ) the scattering angle of electrons near the substrate is mainly lange - angle, which is helpful to grow diamond film over a large area when glow discharge is kept ; 2 ) after considering the recombination process, the number of particles distribution is provided

    主要結果如下： （ 1 ）研究了電子在雪崩碰撞和分解電離后的角分佈情況，結果表明基片附近電子的散射以大角散射為主，在維持輝光放電的條件下，較高的偏壓和工作氣壓對金剛石的橫向連續成膜是有益的； （ 2 ）考慮了低溫合成金剛石薄膜過程中電子與各種碎片粒子的復合過程，給出了不同的復合系數情況下的粒子數分佈，結果顯示各種碎片粒子的分佈隨復合系數的變化會出現粒子數分佈的漲落現象。
  13. Based on the singular stress field with multiple singularities, numerical methods to determine the orders of the multiple stress singularities are proposed from the numerical solutions obtained by common numerical procedures

    其次，基於橫觀各向同性壓電材料空間軸對稱變形問題的通解，利用特徵展開法，給出了奇異點附近的位移場和奇異應力場。
  14. As one of the key device in soi hvic, soi lateral high voltage device has been deeply investigated in this field

    Soi高壓橫向耐壓器件是高壓集成電路的核心和關鍵，受到了國際上眾多學者的關注。
  15. The design and simulation of the circuit, which is designed to drive a power mosfet with a 500v breakdown voltage and maximum ia operation current, is implemented. the circuit can be used as a pre - regulator for electronic ballast. the ic solution also provides a voltage - regulator with the functions such as undervoltage lockout, and overvoltage protection

    設計目的是使電路作為電子鎮流器的前端變換器可以驅動耐壓為500v ，最大工作電流為1a的橫向功率mos ，對整流電路的直流輸出電壓進行穩壓，並實現過壓、欠壓保護，提高用電效率，經過理論分析使經校正後的功率因數達到0 . 95以上。
  16. We have done the following work in this paper : 1. proposal of a novel high - voltage soi lateral structure ( tsoi ), and establishment of its blocking theory ; 2. proposal of devices based on epitaxial simox soi ( esoi ) substrate ; 3

    本文主要進行了三個方面的工作： 1 、提出了降場電極u形漂移區的橫向高壓器件結構tsoi （ trenchsoi ） ，並建立了該結構的解析理論[ 1 ] ； 2 、提出基於simox外延襯底esoi （ epitaxialsimoxsoi ）的器件結構； 3 、設計了基於simox處延襯底結構的功率開關集成電路。
  17. Vibration analysis of electrorheological sandwich beams with transversely compressible core

    橫向可壓縮電流變夾層梁的振動特性
  18. The proportional - integral - differential ( pid ) controlling method was employed to realize feedback control of the z piezo. we designed the a / d & d / a interfaces for controlling and data acquisition, and further compiled the powerful software system for con

    實現了卓越的afm性能，其解析度達到橫向0 . inm 、縱向優於0 . inm ，在士150v的掃描控制電壓下，最大掃描范圍達到10娜火10泌，提高掃描電壓，可進一步擴大掃描范圍。
  19. Taking the example in the three gorges hydroelectric station, we researched the influence of the weld process on the construction and operation of penstock after moving contract - elongate nodes, analyzed the deformation law of two plans and calculated the crosswise and lengthwise shrinkage in weld process using experience formula and theory respectively, and then analyzed the influence of the welding and installing process on shrinkage, finally chose the best installation plan

    摘要以三峽水電站引水壓力鋼管施工現場為實例，研究取消伸縮節后焊接對引水壓力鋼管施工的影響，分析了兩種方案在焊接過程中的變形規律，分別用經驗公式和理論計算出兩種方案焊接時的橫向和縱向收縮量，然後分析收縮量對安裝焊接過程的影響，選擇出最佳安裝方案。
  20. Test methods for the properties of piezoelectric ceramics. transverse length extension vibration mode for bar

    壓電陶瓷材料性能試驗方法長條橫向長度伸縮振動模式
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