氧缺位 的英文怎麼說
中文拼音 [yǎngquēwèi]
氧缺位
英文
oxygen vacancy-
The annihilation of the octahedron voids at the tips of fpds was divided two processes : ( 1 ) the oxide on the void was removed by the out - diffusion of oi in the shallow region, especially the oi aroud the void and by the entry of the interstitial si atomics. ( 2 ) the void without oxide shrinked by emitting vacances and the migration of silicon atoms from edge to the bottom of void
Fpds端部八面體空洞的消失分為兩個階段: (一)覆蓋在空洞各個內壁上的氧化膜由於高溫下矽片表面區域的間隙氧原子,尤其是空洞型缺陷周圍的間隙氧原子的外擴散及自間隙硅原子的進入,而逐漸變薄直至最終消失。 (二)無氧化膜的空洞,在高溫下發出一個個空位,同時八面體空洞周圍的自間隙硅原子不斷的從空洞的邊緣遷移至空洞的底部,使空洞逐漸變淺直至最後消失。( 5 ) glassy oxide film of samples processed by mevva al / piid si covered the surface of sic coating thickly and uniformly, and left few holes as a result of a good ability of sealing, which made weight loss of sic - c / sic smaller in air at1300
( 5 ) mevva源注入al再piid (等離子源全方位沉積) si塗層,玻璃氧化層厚而均勻,愈合性能好,孔洞少,對塗層缺陷有最佳的改性效果。復合材料在1300空氣中的氧化失重顯著降低,甚至出現增重。Lying in an intensive - care ward is a world away from climbing everest, but a connection will be drawn this spring when 45 scientists and 208 volunteers tackle the mountain to bring back information about oxygen deprivation
躺在搶救室里和攀登珠穆朗瑪峰原本毫不相干,但今年春天,它們之間的聯系將會在45位科學家和208位志願者為了獲取關于缺氧的信息而挑戰這座高峰的時候建立起來。Intense pl band at 300 - 570nm, whose central position was found red - shifted with the increase of o content, was observed in the a - sihxoy thin films fabricated by pecvd. thin films with strong blue pl peaks were prepared by plasma oxidation, and the result directly proved that the blue pl peaks were originated from si - o defect levels
通過pecvd法與放電等離子體氧化技術結合獲得了主峰位於藍光波段的熒光帶,而且具有分立峰結構,其結果直接證明了藍光發射與缺陷能級有關,起源於si - o結合特定組態而形成的發光中心。The air we breathe in supplies the oxygen that is necessary for keeping every part of the body alive , and the brain , which itself controls breathing , is the first to suffer if oxygen is lacking
我們呼進的空氣提供了氧氣,這對於我們身體各個部位保持活力是必要的,如果缺氧的話,那麼本身控制呼吸的大腦是第一個受苦的。Various perovskite compositions have been prepared through this method and their structure, electronic and magnetic properties have been studied. in this paper, la2o3, sro2i mn, naclo4, kmno4 were used as raw materials and were synthesized into la1 - xsrxmn03 powder by employing self - propagating high - temperature synthesis ( shs ) technology and filtration processing. in addition, the mechanism of chemical reaction and microstructure formation process of la2o3 - sro2 - mn - naclo4 - kmno4 system was studied
La _ ( 1 - x ) sr _ xmno _ 3的shs合成工藝研究發現,在shs合成過程中液相量的多少和反應溫度有很大的關系,通過在反應體系內加入第二相氧化劑kmno _ 4可以控制反應進程, kmno _ 4在反應中分解得到的高活性mno _ 2利於產物的生成,一定程度上避免了氧缺位和中間產物的形成。This is probably because a fetus starved of oxygen will send oxygenated blood to the brain in preference to rest of the body
這可能是因為一個缺乏氧的胚胎會首先把充氧的血液輸送到腦部,然後才送到身體的其他部位。Another possible reason for this phenomenon is that with higher temperature, the mobility near defects of carbon atoms in grown carbon nanotubes would be also elevated, which gave carbon atoms higher mobility and have chance to readjus to decrease or eliminate some defects. a series of pretreatments and modifications including purification, annealing and doping were performed before hydrogen storage experiments carried out at room temperature under modest pressure ( 12mpa )
在氮氣中進行退火處理納米碳管的儲氫性能高於在空氣中退火的納米碳管,主要原因是在空氣中退火時,納米碳管的表面引入了大量的氧官能團,而氧官能團能夠占據納米碳管的缺陷位,減少了氫的可吸附位置,阻礙氫進入納米碳管,從而降低了納米碳管的儲氫能力。The effect of hpc is broadened remotely to protect different organ - tissues in other regions ( remote / ectopic hpc, r / e hpc ) and crossly to resist a variety of stresses other than hypoxia ( cross / pluripotential hpc, c / phpc ) from protection of original local in situ organ - tissue repeatedly exposed to hypoxia ( local / in situ hpc, i / ii hpc )
缺氧預適應的效應已由對重復缺氧局部原位器官組織的保護(局部原位缺氧預適應)發展到既保護遠隔的各種異位器官組織(遠程異位缺氧預適應)又抗禦其它種種非缺氧性應激(交叉多能缺氧預適應) 。It is well known that paf, a membrane lipid derivative molecule, is increased duing ischemia and hypoxia, which stimulates the further release of glutamate at presynaptic endings. ginkgolide b, one of the component of ginkgo biloba leaves, is a potent paf receptor antagonist
研究者們在篩選和尋找防治缺血缺氧性腦損傷的過程中,已經確實證明了天然銀杏葉的組分之一ginkgolideb是一種強有力的高特異性天然paf受體拮抗劑,可與位於突觸前膜的特異性paf受體結合。It is found that the pl spectra of al - si - sio2 films are composed of 3 bands located at about 370nm, 410nm, and 510nm, respectively. the peak position changes little with the different amount of al, while the intensity of the pl peak changes
Ple結果表明, 37onm和410nm的pl ,峰與樣品中的氧空位缺陷有關,而510nm的pl峰則是由於鋁的摻入改變了樣品中的缺陷狀態所致,是al 、 si 、 o共同而復雜的作用結果。Using this system, we have studied matrine - inhibittory effect and trifluoperation - neuroprotection effect in hippocampal slices, also discussed the mechanism of long - term potentiation using anesthetic rats. the experiment results showed that matrine can inhibit the hyperactivity induced by penicillin sodium in dosage by changing the relative parameters of field potential ; trifluoperation can alter ps change with the time, enhance the degree and the ratio of ps recovery, then minis the hypoxic injury ; high frequency stimulate can increase ps amplitude and epsp slope for long time, buildup the in / out function of nerve cells, and enhance synaptic plasticity
結果表明,苦參堿能夠劑量依賴性地抑制青霉素誘導的神經元順向信號傳導激活過程,使細胞外記錄到的場電位各個參數發生相應改變;三氟拉嗪可以改變ps的時相變化,提高ps的恢復程度和恢復率,減小了神經元因缺氧引起的不可逆損傷;高頻刺激( highfrequencystimulate , hfs )可以長時間的增強ps的幅度和epsp的斜率,進而增強神經元的輸入輸出功能,增加了突觸的可塑性。The intensity of distinguishable pl peaks increased with the increasing n content in the films, and the central positions of the above two pl bands were influenced by both the content of o and n. it is suggested that these pl were originated from luminescence centers related to si - o and 0 - si - n defects
分立峰強度隨薄膜中的氮含量增加而升高,熒光帶中心位置受到氧、氮含量的影響,分析表明其熒光起源於si - o和n - si - o等復合缺陷組態能級間的輻射躍遷。The experiments show an room temperature in the course of reactive sputtering conduces to restraining the surface reaction between hf02 and si layer ; 2. we studied different surface progress. comparable with conventional method, the surface with nh4f cleaning step have superior thermal stability with hfo2, nh4f cleaning step is introduced can reduces leakage current and eot ; 3
柵泄漏電流的減小可歸于氧空位缺陷的減小,即高的濺射氧氣氛和氧氣氛退火有助於減小hfo _ 2柵介質中的氧空位缺陷; 4 )研究了反應濺射制備的hfo _ 2柵介質漏電流機制及其silc效應。After annealing at 600, because of formation of multi - vacancy - type defects that have long positron lifetime, positron annihilation average lifetime increased. when the average positron lifetime increased to maximum value ( 360ps ), the interstitial oxygen concentration decreased to minimum value ( 4 1017atoms / cm3 ). this result suggested that oxygen was involved in the formation of multi - vacancy - type defects
正電子湮沒技術測試證明,快中子輻照直拉硅中在大約600退火時產生的多空位缺陷具有較長正電子壽命,可以使正電子平均壽命增加,當樣品的正電子平均壽命達到最大時( 360ps ) ,其間隙氧含量降到一個極小值( 4 10 ~ ( 17 ) atoms / cm ~ 3 ) ,這說明氧參與了這些缺陷的形成。Fig. 3 anoxia reperfusion group with the addition cerium ions : myocardial cell structure shows vague, mitochondria swell, deposits of cerium are scattered throughout the cytoplasm, some parts appear confluent
圖3缺氧再灌注加鈰組:心肌細胞結構不清,線粒體腫脹,胞漿內充滿大量的鈰沉積顆粒,有些部位融合成片。In the discussion of visible luminescence mechanism, in order to prove that the oxygen vacancies or defects distribute on the surface of nanocrystallites, we presented to prepare the zno thin films with doped mn and studied the photoluminescence of zno : mn
在可見發光機制探討中,為了證明氧空位或缺陷是分佈在納米晶表面,我們提出氧化鋅中摻雜錳( zno : mn ) ,研究了zno : mn薄膜的光致發光( pl ) 。It was found from the experiment that, with the increasing of substrate temperature, there were more oxygen vacancies in the films, which lead the conductance of the sample become larger, and the absorb edge of zno thin films shifted toward higher wavelength ; with increasing of ar : o2 ratio, there were lesser oxygen vacancies in the films, which lead the absorb edge of zno thin films shifted toward lower wavelength
實驗還發現,隨著襯底溫度的升高,薄膜中產生的氧空位將會增多,使得zno薄膜的電導逐漸增大,而且其紫外透射吸收截止邊帶向高波長方向漂移;隨著氬氧比例的增加,薄膜中的氧缺陷相對減少,薄膜的透射吸收截止邊向低波長方向漂移。It was found from the experiment that, with the increasing of substrate temperature, there were more oxygen vacancies in the films, which lead the conductance of the sample become larger, and the absorb edge of ito thin films shifted toward lower wavelength ; with increasing of ar : o2 ratio, there were lesser oxygen vacancies in the films, which lead the absorb edge of ito thin films shifted toward lower wavelength
實驗還發現,在一定的溫度范圍內隨著襯底溫度的升高,薄膜中產生的氧空位將會增多,使得ito薄膜的電導逐漸增大,而且其紫外透射吸收截止邊帶向短波長方向漂移;隨著氬氧比例的增加,薄膜中的氧缺陷相對減少,薄膜的透射吸收截止邊向低波長方向漂移。The charge related to esd can be compensated by oxygen environment, oxygen environment works mainly through making up oxygen vacancy and repairing energy band distortion in time. heating the sample and reducing defect concentration can reduce the charge related to inner defects
對于樣品表面電子受激解吸造成的充電可通過氧環境提供補償,氧環境主要是通過及時補充氧空位、修復能帶扭曲起作用的;對于電子束調制內部缺陷造成的充電可通過加熱試樣減輕缺陷濃度來補償。分享友人