氫氣退火 的英文怎麼說

中文拼音 [qīngtuìhuǒ]
氫氣退火 英文
hydrogen annealing
  • : 名詞[化學] (氣體元素) hydrogen (h)
  • : Ⅰ名詞1 (氣體) gas 2 (空氣) air 3 (氣息) breath 4 (自然界冷熱陰晴等現象) weather 5 (氣味...
  • 退 : 動詞1 (向後移動) retreat; draw back; move back 2 (使向後移動) cause to move back; remove; wit...
  • : fire
  • 氫氣 : hydrogen氫氣球 hydrogen balloon
  • 退火 : [冶金學] anneal; annealing; back-out
  1. Such as 180 t oxygen converter, 1550 250 mm plate suspending straightening machine, annealing furnace of the whole hydrogeb mask, 1250mm cantalever straightener etc.

    如180t氧頂吹轉爐, 1550250mm板坯連鑄機, 1829球磨機,全罩式退爐, 1250mm懸臂矯直機等。
  2. Ultrafine powder, the high quality ultrafine power has been got. ( 2 ) the perfect rutile has been got with flame fusion method in developed domestic sjz sintering machine, and the technology of crystal growth has been clearly analyzed. in the end the suitable techniche has been got on the basis of systemic study on the conditions of growth

    通過對晶體生長中的籽晶方向、氛等的作用的大量深入的研究,得出了金紅石晶體焰熔法生長現階段的最佳工藝條件,即籽晶( 001 )在氧比為1 : 1的附近,通過加進行擴肩,然後在1450加氧退24hr后就能夠獲得完整透明的金紅石單晶。
  3. Another possible reason for this phenomenon is that with higher temperature, the mobility near defects of carbon atoms in grown carbon nanotubes would be also elevated, which gave carbon atoms higher mobility and have chance to readjus to decrease or eliminate some defects. a series of pretreatments and modifications including purification, annealing and doping were performed before hydrogen storage experiments carried out at room temperature under modest pressure ( 12mpa )

    在氮中進行退處理納米碳管的儲性能高於在空退的納米碳管,主要原因是在空退時,納米碳管的表面引入了大量的氧官能團,而氧官能團能夠占據納米碳管的缺陷位,減少了的可吸附位置,阻礙進入納米碳管,從而降低了納米碳管的儲能力。
  4. Additional annealing experiments in nitrogen atmosphere revealed that the heavily damaged region with hydrogen - induced defects appears to be the adsorption center for the outside oxygen to diffuse into the silicon during the high - temperature annealing process, and consequently, broaden the thickness of the box layer. this important finding may provide a possible solution to reduce the cost of the conventional simox - soi wafers while maintaining a desirable box thickness

    獨特設計的氮退及分步退實驗證明了原注入樣品的缺陷層中致缺陷的存在使得在退過程中加速外界氛中的氧擴散進來,並成為強捕獲中心使擴散進來的氧滯留于缺陷層從而促使氧缺陷層中的氧沉澱生長,加速了高溫退中的內部熱氧化過程,從而形成了比傳統相同劑量simoxsoi厚得多的氧化埋層。
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