氮化的 的英文怎麼說

中文拼音 [dànhuàde]
氮化的 英文
azotizing
  • 氮 : 名詞[化學] nitrogen （7號元素, 符號n）
  • 的 : 4次方是 The fourth power of 2 is direction
  1. Synthesis and crystal structure of - d - o - acetyl - glycopyranosyl azide

    吡喃葡萄糖疊氮化物的合成及晶體結構
  2. Effects of atmospheric nitrogen deposition on forest soil acidification

    大氣氮沉降對森林土壤酸化的影響
  3. ( 6 ) 4, 6 - diamino - 5 - nitrobenzofuroxan is designed to synthesis from trichlorobenzene through nitration aminatiom azidation and thermal decomposition. this compound is a new explosive. but we only got the intermediates of the first and second steps ( nitration, amination ) because the limit of time

    （ 6 ）從均三氯苯出發，設計經硝化、氨化、疊氮化和脫氮四步合成4 ， 6 -二氨基- 5 -硝基苯並氧化呋咱，這是未見文獻報道的新化合物，不過由於時間關系，我們只得到氨化這一步的中間產物即3 ， 5 -二氨基- 2 ， 4 -二硝基氯苯，這也是個未見文獻報道的新化合物。
  4. The curing system of gap ( glycidyl azide polymer ) has been studied

    本文系統研究了gap （聚縮水甘油疊氮化物）的固化體系。
  5. Synthesis and nonlinear optical properties of novel azo compounds

    新型偶氮化合物的合成及其非線性光學特徵
  6. Synthesis of chlorosulfonyl - containing pyrazolone azo compounds with thionyl chloride - dmf system

    含磺酰氯基吡唑啉酮類偶氮化合物的合成
  7. Cubic boron nitride ( cbn ) is a synthesized wide - band - gap iii - v compound semiconductor and has lots of excellent physical and chemical properties. it has been attracted a nice bit of attention for years because of its application in mechanics, calorifics, optics and electronics

    立方氮化硼（ cbn ）是一種人工合成的寬帶隙-族化合物半導體材料，它有許多優異的物理化學性質，在力學、熱學、光學、電子學等方面有著非常誘人的應用前景，多年來一直吸引著國內外眾多研究者的興趣。
  8. Pole, inside the set adoption was turned by nitrogen to handle a steel material, having to bear to whet and bear causticity more and so much

    螺桿內套採用經氮化處理鋼材，具有較好的耐磨和耐腐蝕性。
  9. But there has been not correspondingly control system for it by far. ln this thesis a pulse nitrogenous conveying control system based on profibus is designed and achieved on the thinking of modularizing the pulse nitrogenous conveying system, which can be used for different the pulse nitrogenous conveying system and added new control cells. the thesis reviewed systematically the pulse nitrogenous conveying system in practical, and makes the understanding that the system is composed of standard gas storage cell, conveying equipment cell and target container ceil. then a common modularized control system project is designed and achieved by structurized programming orienting process, which consists of four control models, respectively for gas storage cell, for conveying equipment cell and for target container cell

    本文綜合實際使用的氮保護脈沖氣力輸送系統，把氮保護脈沖氣力輸送系統分為標準化的氣源設備單元、發送設備單元和目的料倉設備單元，在此基礎上，設計了用於氮保護脈沖氣力輸送系統的通用模塊化控制方案，採用面向過程的結構化編程思想，基於profibus現場總線，實現了組成該方案的四類控制模塊：氣源單元控制模塊、發送單元控制模塊、目的料倉單元控制模塊和通訊處理控制模塊。
  10. Nitridation of large silicon surfaces at low temperatures by electron cyclotron resonance plasma

    等離子體對硅表面的低溫大面積氮化
  11. Based on the analyses on mechanical properties, microstructure and fracture of - the microalloyed steels socrv with various heat treatment technique, it can be affirmed that various fractures arttribute to various mechanism, we can draw conclusion that the strength and toughness of microalloyed steels 50crv will be increase simultaneously by optimal heat treatment technique. to illustrate the mechanism of the strength and toughness of microalloyed steels socrv, we designed the comparative experiment and observed the microstructure of the sample which occurred at different quench and tempering temperature and different tempering time. the last experiment results were determined by the four factors : fined microalloyed elements grains, the decompound of martensite, martensite transformation of remnant austenite and the second phase precipitation

    為解釋微合金化50crv鋼強韌化機理，本文通過對不同淬火溫度，回火溫度，回火時間下的力學性能指標的對比及顯微分析，認為微合金元素的細化晶粒，馬氏體的回火分解，殘余奧氏體的轉變，第二相的沉澱析出共同決定了微合金鋼的強韌化情況，特別是由於微合金元素的存在，其細化晶粒及其碳氮化物的沉澱析出，導致鋼的良好的強韌性，並且如果工藝滿足第二相的沉澱析出強化大於回火馬氏體分解引起的軟化效應，會在硬度曲線中產生明顯的二次硬化現象。
  12. Our products are made of selected excellent diamond, of all kinds and sizes, ready to meet the different requirements from our customers. ourmain products are diamond, cubicborazin, emery wheel, needle files, grinding paste, alloy molds and soon

    本公司產品選用優質金剛石精製而成，品種多，規格齊，能滿足不同廠商的要求，主要產品有金剛石、立方氮化硼、砂輪、什錦銼、研磨膏、合金模具等。
  13. Effects of hydrogenic donor impurity position on the binding energy of a bound exciton in - nitrides quantum dots

    族氮化物量子點中類氫施主雜質位置對束縛激子結合能的影響
  14. Hydrogenated amorphous silicon nitride ( a - sinx : h ) films have been deposited by helicon wave plasma enhanced chemical vapor deposition ( hwp - cvd ), the effect of sih4 / n2 rate on the properties of the samples is systematically studied, and the critical experiment condition is obtained under which a - sinx : h films with different compositions are deposited

    本工作採用螺旋波等離子體化學氣相沉積（ hwp - cvd ）方法制備了氫化非晶氮化硅（ a - sin _ x ： h ）薄膜，系統地研究了不同反應氣體配比對薄膜特性的影響，得到了沉積不同組分a - sin _ x ： h的典型實驗條件。
  15. ( 2 ) with the aid of in situ monitoring tool, we have investigated the effects of substrate nitridation

    （ 2 ）以在位監測為輔助工具，研究了藍寶石襯底氮化的影響。
  16. The effect of oxygen on nitridation of silicon by nitrogen is discussed in the theory of physical chemistry

    從理論上詳細地分析了二氧化硅氮化與矽片氮化的關系和氧分在氮化過程中對氮化的影響。
  17. The direct - nitridation of silicon wafer in nitrogen is very important because it involves in silicon wafer ' s heat treatment, ic technics and pulling monocrystal in nitrogen

    在矽片的熱處理、集成電路工藝和氮氣保護的拉晶過程中，都涉及到硅的氮化問題，因此矽片氮氣直接氮化的研究意義重大。
  18. With the research on hfoxny gate dielectrics, it can reduces leakage current and increase crystallizing point ; our research can help to realize the leakage current mechanism and silc effect of hfo2, futher more it can offer us direction on optimize the fabrication process

    結果表明，與hfo :相比，氮化的hfo :具有小的漏電流。我們的研究結果有助於進一步了解hro :柵介質的泄漏電流機制和silc效應的特徵，為進一步優化hfo :高k柵介質的制備工藝提供指導。
  19. At same time macroscopical and microcosmic mathematical model of nitridation are investigated. in this paper the thermodynamics of direct - nitridation, effect of temperature and nitrogen ambience on nitridaton and self - diffusion are discussed in the theory of physical chemistry in detail

    同時本文用物理化學的原理討論了矽片氮氣直接氮化的熱力學方程、氮化條件的理論根據和原子的自擴散，從理論上證明隨溫度升高氮化加劇，氣氛純度越高氮化越容易的結論。
  20. We researched fabrication at different asputtering and annealing atmosphere, the different process conduced different electrical properties. we can conclude a higher annealing temperature and higher proportion of o2 during reactive sputtering favors the improvement of electrical performances of hfo2 dielectrics ; 4. the analysis of i - v curves of these devices displays different leakage current mechanism under different area of applied bias - voltage ; as to silc. there are different leakage current mechanism at influence of sil. c ; 5

    研究表明，在優化工藝條件下制備的hfo _ 2介質層中，襯底注入條件下由於其較低的體和界面缺陷密度，漏電流的輸運機制主要以schottky發射為主; silc效應導致hfoz / si界面缺陷態的增加，從而使得襯底注入條件下，柵泄漏電流機制不僅有schottky發射還有f一p發射機制起主要作用; 5 ）初步研究了氮化的hfo : （ hroxny ）柵介質的電學特徵。
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