沉降起電 的英文怎麼說

中文拼音 [chénjiàngqǐdiàn]
沉降起電 英文
sedimentation electrification
  • 沉 : Ⅰ動詞1 （沉沒; 墜落） sink 2 （沉下 多指抽象事物） keep down; lower 3 [方言] （停止） rest Ⅱ形容...
  • 降 : 降動詞1. （投降） surrender; capitulate 2. （降伏） subdue; vanquish; tame
  • 起 : 起Ⅰ動詞1 （站起; 坐起） rise; get up; stand up 2 （取出; 取走） draw out; remove; extract; pull 3...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  1. The thesis introduces the biot ' s three - dimension consolidation theory based on absolute linear - elastic theory ; the thesis designs the pit dewatering scheme of hand - dug piles support of shenyang subway ' s shenyang station construction ; the thesis uses finite element program to simulate the influence on around environments caused by pit dewatering, and finds the change laws of earth mass inner stress and the effect parameters on the surface deformation on the basis of reasonable hypothesis and the analysis of ground water exploitation progress. combined with stochastic medium theory, the thesis introduces dewatering subsidence coefficient, sets up the predicting model of the surface deformation caused by dewatering, and develops the computing program ; by application of program on a single well of underwater exploitation, it is proved that the program is feasible, so the prediction of the surface deformation caused by underwater exploitation is realized

    本文介紹了基於線彈性本構關系的biot理論；設計了擬建沈陽地鐵沈陽站點人工挖孔樁支護施工的基坑降水方案；利用有限元程序，模擬了基坑降水對周圍環境的影響；在合理假設的基礎上，分析了地下水開采過程中，地層應力的變化規律，找到了影響地面變形的參數；與隨機介質理論相結合，通過引入采水下沉系數建立了地下水開采引起地面變形的預計計算模型，並編制了電算化程序；通過某單井開采實例驗證了該方法的可行性，實現了地下水開采引起地面變形的預計。
  2. During the fabrication or service, if the applied tensile stresses exceed the probabilistic tensile strength of silicon, then failure will occur. even a tiny crack will bring tremendous damage to devices and circuits. especially nowadays, with the increasing of silicon wafer diameter, warpage in heat treatment, defects and dislocations generated in silicon often become critical problems in ulsi devices fabrication

    特別在大規模集成電路與器件生產中，一個微小的裂紋就可能導致后道工序中電路與器件的完全損壞；而且在熱處理過程引起的翹曲，使光刻精度下降；在矽片內部產生的氧沉澱及位錯等缺陷，會導致集成電路或器件的漏電流增加，使器件失效。
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