源漏特性 的英文怎麼說

中文拼音 [yuánlóutèxìng]
源漏特性 英文
source-drain characteristics
  • 源 : 名詞1. （水流起頭的地方） source （of a river）; fountainhead 2. （來源） source; cause 3. （姓氏） a surname
  • 漏 : Ⅰ動詞1 （從孔或縫中滴下、透出或掉出） leak; drip 2 （泄漏） divulge; disclose; leak 3 （遺漏） le...
  • 特 : Ⅰ形容詞（特殊; 超出一般） particular; special; exceptional; unusual Ⅱ副詞1 （特別） especially; v...
  • 性 : Ⅰ名詞1 （性格） nature; character; disposition 2 （性能; 性質） property; quality 3 （性別） sex ...
  • 特性 : characteristic（s）; character; performance; features; properties; behaviour; response; character...
  1. Firstly, it analyses economic character, competition situation, future and attraction of mobile communication industry in huazhou at present. secondly, it analyses the importance of resource, competition ability and customer orientation with swot method and value chain method. thirdly, with continuous competitive advantage theory and creative destruction theory, it illustrates that defense cannot protect the original competitive advantage in the severity competition situation, and that the only source for continuous competitive advantage is continuous creation and method of pursuing a scries of temporary dynamic advantage

    首先，分析了當時華州移動通信行業的經濟特性、競爭態勢、前景及吸引力；接著，運用swot 、價值鏈等分析法分析了aaa的資源、競爭能力及客戶導向的重要性；然後，運用持續競爭優勢和創造性破壞理論，闡明在激烈競爭的新形勢下，防禦已不能保護原有的競爭優勢，只有通過不斷地創新，追求獲得一系列暫時的動態優勢的方法，才是構築持續競爭優勢的源泉，從而形成aaa的戰略選擇；最後，運用漏洞分析法和核心競爭力分析等，結合動態戰略管理的理念，導出aaa的戰略實施方案，提出了戰略計劃。
  2. A model of the interface state density distribution near by valence band is presented, and the dependence of the threshold voltage on temperature, the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics, transfer characteristics and effective mobility of sic pmosfets are analyzed. thirdly, the output characteristics and the drain breakdown characteristics are modeled with the procedure medici. the output characteristics in the room temperature and 300 ? are simulated, and the effects of gate voltage. contact resistance, interface state and other factors on sic pmos drain breakdown characteristics are analyzed

    提出了一個價帶附近的界面態分佈模型，用該模型較好地描述了sicpmos器件閾值電壓隨溫度的變化關系、 c - v特性曲線以及亞閾特性曲線；分析了源漏寄生電阻對sicpmos器件輸出特性、轉移特性以及有效遷移率的影響；論文中用模擬軟體medici模擬了sicpmos器件的輸出特性和漏擊穿特性，分別模擬了室溫下和300時sicpmos器件的輸出特性，分析了柵電壓、接觸電阻、界面態以及其他因素對sicpmos擊穿特性的影響。
  3. The carrier wave is modulated directly by the baseband signal at several frequency point in l band and s band. firstly, this paper clarifies the theory of i / q modulation, elaborates evm and acpl, and analyzes the effect of amplitude and phase unbalance and dc offset on evm. secondly we review the basic principle of phase locked loop and it ’ s composing parts, including the basic conception and design method of pll frequency synthesizer, especially introduce the charge pump pll frequency synthesizer in detail

    首先，在闡述i / q正交調制基本原理的基礎上，通過對誤差矢量和鄰近通道功率泄漏的詳細分析，定性、定量地討論了各種非理想電路因素（如相位不平衡、幅度不平衡、直流偏差等）對調制器性能的影響;其次，介紹了鎖相環的工作原理和基本組成部分，包括鎖相環的設計和環路濾波器的設計，特別詳述了電荷泵鎖相頻率源;第三，介紹了採用直接調制技術模擬衛星信號的射頻前端的設計;最後，對整個直接射頻調制系統進行測試，結果基本上達到了課題要求。
  4. Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet

    基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高
  5. In this paper, the theory of negatively charged surface states is used to investigate dynamic breakdown characteristics and the increase of gate - drain breakdown voltage as well as the reduction of saturated drain - source current after sulfur passivation. the measure which can improve the stability of sulfur passivation is proposed

    本論文通過對gaasmesfet擊穿機理和硫鈍化機理的研究，用負電荷表面態理論，解釋了gaasmesfet動態擊穿特性及硫鈍化后柵漏擊穿電壓增大、源漏飽和電流減小的機理，提出了改善硫鈍化穩定性的措施。
  6. We also studied some characteristics of sidagating effect using mesfet fabricated in planar boron implanted process including photosensitive, hysteresis, influence of sidegating effect on mesfet threshold voltage, influence of drain - source voltage on sidegating threshold voltage, influence of exchanging drain and source electrode on sidegating threshold voltage, relation between sidegating threshold voltage and the distance between side - gate and mesfet, relation between sidegating effect and floating gate, and so on

    本文還採用平面選擇離子注入隔離工藝，開展了旁柵效應的光敏特性、遲滯現象、旁柵效應對mesfet閾值電壓的影響、 mesfet漏源電壓對旁柵閾值電壓的影響、漏源交換對旁柵閾值電壓的影響、旁柵閾值電壓與旁柵距的關系、旁柵效應與浮柵的關系等研究。
  7. The emphases of our research works are as follows : under ultra - low temperature ( about 0. 236k ) conditions, how the frequency and power of the saw and the source drain voltage influence the acoustic current ; and the relationship between the source drain current and the split - gate voltage ; and how to find the cut off voltage of the quasi - 1d electron channel ; and also the frequency character of the idt in the saw parts

    研究的重點為，在甚低溫（ 0 . 236k ）下，通過實驗研究表面聲波的頻率和功率，源漏偏壓等因素對聲電電流的影響;研究準一維電子通道中不同源漏電流與分裂門負偏壓的關系，以找到分裂門的鉗斷點電壓;以及研究聲表面器件叉指換能器的頻率特性等。
  8. The effects of the operation temperatures, gate voltages, drain - source voltages and magnetic field upon the characteristic of device are analyzed in detail. coulomb blockade and single electron tunneling are observed in the devices. 3

    詳細地分析了工作溫度、柵極電壓、漏源電壓和磁場對其特性的影響，觀測到明顯的庫侖阻塞效應和單電子隧穿效應，器件的工作溫度可達到77k以上。
  9. " we will also find loopholes in current regulations and mechanisms through studying the causes, characteristics and rules of such cases to curb crimes from the source, ' ' he added

    他說： 「我們也將通過探究此類案件的成因，特性和規則來尋找現行規章和機制中的漏洞，以求從根源上切斷此類犯罪的發生。 」
  10. Based on this model, a method was developed to obtain certain guided mode signal form ae signals. the final results showed that the method could reduce the multimode and disperse influence to ae signals effectively and locate the leak source correctly

    在此基礎上，利用結構頻散特性確定相關參數、提取單一導波模態的方法，減小了多模態和頻散特性對定位的不利影響，從而較好地實現了泄漏源的定位。
  11. We discussed the influence of channel - length modulation effect and dibl effect to temperature behavior of source - drain current, gave a expressions for studying the temperature characteristic of source - drain current, and deduced a ztc point expression

    研究了溝長調制效應和漏致勢壘降低效應對漏源電流溫度特性的影響，給出了一個用於研究漏源電流溫度特性的電流公式；並推導了短溝道most的ztc點公式。
  12. Because of the great potential of sic mosfets and circuits, in this paper, the characteristics of 6h - sic pmosfets are studied systematically, emphasizing on the effects of interface state and s / d series resistance on sic pmosfets firstly, the crystal structure of silicon carbide, the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented. the characterization in space - charge region of sic pmos structure is analyzed by solving one dimension poisson equation

    研究了sic的晶體結構，分析了sic中雜質的不完全離化現象以及sic中空穴遷移率的擬和公式；用解一維poisson方程的方法分析了sicpmos空間電荷區的電特性；本論文重點分析了界面態分佈和源漏串聯電阻對sicpmos器件特性的影響。
  13. In this paper, the soi technology is applied to the integrated circuit fabrication. soi technology overcomes some disadvantages of bulk silicon because of its inherent structure. it has the advantages such as no latch - up effect, low parasitic capacitance, high transconductance, simple structure, high density and good anti - radiation

    Soi技術以其獨特的材料結構有效地克服了體硅材料的不足，它具有無閉鎖效應；漏源寄生電容小；較高的跨導和電流驅動能力；器件結構簡單；器件之間距離小；集成度高；抗輻射性能優良等優點。
  14. A new thermodynamics analysis of working process of diesel engine which is different with traditional one - finite time thermodynamics analysis model, is put forward in this paper. this model gives the consideration to thermal resistance loss between working substance and heat reservoirs, heat leak loss inner the system, and character of finite time of system

    本文提出了一種不同於傳統熱力學分析方法? ?有限時間熱力學分析模型，對柴油機工作過程進行了研究，該模型考慮了熱源與工質傳熱存在的熱阻、系統內部存在的熱漏損失及系統的有限時間特性。
  15. " many eyeballs " vs " security by obscurity " open source community claims that security of this type of software stems from its openness. any member or expert in the user community can identify its vulnerabilities, and then fixing it without depending on product vendors

    使用開放源碼軟體的社群認為基於源碼公開的特性，這類軟體的保安不成問題；無論是一般用戶或專家，每當發現軟體的漏洞時可自行修正，無需倚賴產品供應商。
  16. The study instructs simulating valve leakage experiment, perfects valves leakage test technology and bases theoretically for applying valve leakage test in practice. the test stand is constructed and instrumented to accept a variety of valves in order to determine which characteristics of acoustic emission change with leakage rate. the data for each valve type is generated by varying valve type and working medium

    建立模擬在用承壓閥門內漏實驗臺，研究典型閥門內漏聲源的聲學特性，確定聲發射特徵參量與泄漏率的關系，為定量評價閥門泄漏率提供實驗數據；通過對不同類型、不同規格、不同工作介質下的典型承壓閥門內漏的實驗研究，確定閥門內漏最佳檢測區域，建立在用承壓閥門內漏聲學檢測方法。
  17. We probed into the most source - drain resistance and its temperature behavior particularly. the result of calculation indicated that the attenuation of source - drain current caused by the source - drain resistance increased when temperature increased

    對寄生的漏源串聯電阻及其溫度特性進行了詳細探討，計算結果表明，漏源串聯電阻給漏源電流造成的衰減在溫度升高后變得很大。
分享友人
分享到 Line

分享到臉書