片電阻率 的英文怎麼說
中文拼音 [piāndiànzǔlǜ]
片電阻率
英文
sheet resistivity-
This paper presents a method that chopping wave is done by switch devices which consist of three - level resistance regulating module and intelligence power module ipm, and which realizes constant - current discharge of storage battery. to achieve the intelligence control of the drive protection and the discharge process of ipm, the paper designs circuit formed by igbt threshold drive pulse pwm signals. ipm fault - blocking protection circuit and microcomputer 80c196. the devices can accurately control the 0 ~ 150a discharge current and the discharge time of the storage battery and calculate the releasing power
實現蓄電池恆流放電過程智能控制是蓄電池放電裝置發展的必然趨，本文提出了一種通過三極電阻調節模塊和由智能功率模塊ipm為開關器件進行斬波從而實現蓄電池恆流放電的方法。為達到對ipm的驅動保護和放電過程的智能控制，文中設計了igbt門極驅動脈沖pwm信號形成電路和ipm故障封鎖保護電路及由單片機80c196為核心的微機控制器。本裝置能夠對蓄電池進行0 150a放電電流及放電時間的精確控制及釋放容量的計算。Tensile properties and impact properties measurements were done at room temperature. the volume resistivity of rectangular samples was measured using a zc36 electrometer and a high 240a voltage supply, for samples with a low resistivity level a dt - 9205b digital multimeter was used, silver paint was applied to ensure complete contact between sample and electrodes, namely, to eliminate the contact resistance. the phase morphology of blends was also studied using a jeol jsm - 5900lv scanning electron microscope ( sem )
體積電阻率的測定：當r _ v 10 ~ 8時，製成100 100 4mm板材，用zc36型高阻儀測量；當r _ v 10 ~ 8時，用dt - 9205b型數字式萬用表測試試樣的體積電阻，為了減小接觸電阻對測試的影響，採用銀導電膠將銅片粘接在試樣的兩個端面上，靜置24小時，待銀導電膠凝固，試謝長瓊:熱拉仲對pet / pe / cb復合導電體系形態和性能的影響樣的電阻穩定后再測量。Standard slice of single crystal silicon resistivity
硅單晶電阻率標準樣片Testing method of resistivity for silicon crystals and silicon wafers with four - point probe
用四點探針法對硅晶體和矽片電阻率的測試方法As the isotropic etching being related to the resistivity of the si material and combining the practical need of the solar cell production, the paper emphasis on the etching of the multicrystal si with resistivity of about 1. cm. the results : ( 1 ) reflectance characteristics the appropriate etching solutions has led to a reduction of the total integrated reflectance to 5. 7 %, which is quite comparable with conventionally pretextured si surface covered by a double layer arc
由於以hf + hno _ 3 + h _ 2o為溶液各向同性腐蝕與矽片的摻雜濃度有關，結合生產太陽電池的實際需要，本文重點研究了電阻率1 . cm左右的多晶硅的腐蝕情況，結果如下： （ 1 ）反射特性在適當的hf + hno _ 3 + h _ 2o溶液中制備的多晶硅電池的絨面，其反射率降到了5 . 7 。The resistance furnace microcomputer automatic procedure temperaturecontrol system is rises, the temperature decrease speed and thesoaking time through the monolithic integrated circuit to the heatingfurnace carries on the strict control the installment, it changes thetemperature delivers, the demonstration and the numerical controlcollection to a body, take the microcomputer control as thefoundation, take the a / d switch as the core, and matches by thesuitable periphery connection electric circuit, realizes to theresistance furnace temperature automatic control
電阻爐微機自動程序溫度控制系統就是通過單片機對加熱爐的升、降溫速率和保溫時間進行嚴格控制的裝置，它將溫度變送、顯示和數字控制集於一體，以微機控制為基礎，以a / d轉換器為核心，並配以適當的外圍介面電路，實現對電阻爐溫度自動控制。So in one hand it requires the wafer ' s diameter to be more large in order to enhance the productivity, and on the other hand it puts forward more strict requirement about the crystal perfection and electricity character. especially the electronic character and the equality of micro - area in the crystal wafer has become the key factor to determine whether the device can be made on it or not. so the resistivity measurement of micro - area become one most important procedure in the chip machining. to ensure the produce quality of chip and the perfect performance of final production, the four - probe testing technology need to be deeply studied
圖形日益微細化，電路尺寸不斷縮小，目前ic製造以8英寸、 0 . 13 m為主，預計在2007年左右將以12英寸、 65nm為主，這一方面要求圓片直徑不斷增大以提高生產率，另一方面對晶體的完美性、機械及電特性也提出了更為嚴格的要求。特別是微區的電學特性及其均勻性已經成為決定將來器件性能優劣的關鍵因素。因此，微區電阻率的測試成為晶元加工之中的重要工序。Also the regulations of stain and resistivity of smart composite with additives of continuous carbon fiber and graphite are analyzed
本文還對連續碳纖維、鱗片填料在拉伸狀態下應變與體積電阻率之間的變化關系進行了研究和分析。Test method for measuring resistivity of semiconductor silicon or sheet resistance of semiconductor films with a noncontact eddy - current gage
半導體矽片電阻率及硅薄膜薄層電阻測定非接觸渦流法This paper mainly accomplished the following research : summarize the classify and application fields of four - probe testing technology ; take the square four - probe testing technology study by using the advantage of rymaszewski method in auto - eliminating the portrait wandering influence to induct ry method to square - probe testing method ; deeply study the influence of probe wandering to progressed ry method testing result ; complete the design of testing panel and testing circuit, realize the auto - testing of mono crystal wafer ; discuss the image enhancement and threshold selection problem in image identify, and finally accomplish the identify of probe pinpoint. the main new view points of the research : 1. it is the first time for applying image manipulation and analysis technique to the sheet resistance measurement, and achieving the auto - location function of the probe
為此，本文開展了以下研究工作：綜述了四探針技術的分類以及應用范圍；對方形四探針測試技術進行了研究，利用rymaszewski法自動消除探針縱向游移影響的優點，將它應用於方形探針測試法中，並對探針游移對改進rymaszewski法測試結果的影響進行了深入探討，提出了用圖像識別技術監測測試進行的方法；完成了測試系統的測試平臺以及測試電路的設計，研製出具有圖像識別功能的斜置式方形探針分析儀一臺，實現了矽片電阻率測試的自動化；對圖像識別過程中涉及到的圖像增強和閾值選擇問題進行了論述，最終實現了對探針針尖的圖像識別以及探針測試結構的自動調整，保證了方形探針測試儀的測試精度。Absorbing properties of frequency selective surface absorber with cross resistance patches
十字型電阻貼片頻率選擇表面吸收體吸波性能研究Test method for measuring resistivity of silicon wafers using spreading resistance probe
矽片電阻率測定擴展電阻探針法Magnetic materials - methods of measurement of density, resistivity and stacking factor of electrical steel sheet and strip
磁性材料.第13部分:電工鋼片和剛帶密度電阻率和疊層系數的測量方法Four - point probe measurement technique is one of the most extensive means for examining the resistivity in the semiconductor industry. with continuous progress, semiconductor industry develops at a very fast speed, the integration level of ic becomes higher and higher. presently, the ic production is entering into the age of ulsi, then testings are more and more important
四探針測試技術是半導體工業檢測電阻率時採用最為廣泛的測試手段之一。隨著時代的不斷進步，半導體產業飛速發展，以單晶矽片為襯底的集成電路集成度越來越高，目前正進入甚大規模集成電路（ ulsi ）時代，測試在整個集成電路生產過程中的地位越來越重要。Ohmic contacts on h2 - thermally - treated 6h - sic surface by evaporating aluminum without annealing have contact resistances of 8 10 - 3 - cm2 on room temperature and keep fairly good thermal stability under the temperature of 400. its ohmic properties do n ' t depend on the doping concentrations of the substrate, which enables us to form ohmic contacts on low dropped substrate especially on epitaxial layer
通過氫氣處理6h - sic表面並鍍鋁后直接形成的歐姆接觸室溫比電阻率達到8 10 ~ （ - 3 ） ? cm ~ 2 ，溫度不超過400時該接觸具有較好的穩定性，其歐姆特性不依賴于襯底的摻雜濃度，是一種適宜在低摻雜襯底特別是sic外延片上制備歐姆接觸的有效方法。In the same way, the ncz silicon with nitrogen - oxygen complexes was annealed by rtf at range of 750 - 950 ? for different time to detect the change in resistivity. we found that nitrogen - oxygen complexes were annihilated with less time and lower temperature than conventional annealing method
同樣，我們將650oc ， zh處理生成氮氧復合體的微氮矽片在750 950c范圍內進行不等時的rtp處理，觀察電阻率的變化，確定了最佳的氮氧復合體消除溫度和時間。In this experiment, thermal donor in cz silicon generated by 450 ? annealing for 32 hours was eliminated by rtf at range of 600 ~ 700 ? for different time. furthermore, the permit temperature and time for annihilation of thermal donor by rtf was found
實驗中將450oc ， 32h處理生成熱施主的普通cz矽片在600oc 700oc范圍內進行不等時的rtp處理，觀察電阻率的變化，從而確定最佳的rtp消除熱施主溫度和時間。Test method for surface insulation resistivity of multi - strip specimens
多片樣品表面絕緣電阻率的測試方法Standard method for measuring radial resistivity variation on silicon slices
矽片徑向電阻率變化的測量方法Specification for fixed resistors for use in electronic equipment - blank detail specification - fixed power resistors, heat - sink types - assessment level h
電子設備用固定電阻器規范.空白詳細規范.固定功率電阻器散熱片型.評估等級h分享友人