生長並延緩 的英文怎麼說

中文拼音 [shēngzhǎngbàngyánhuǎn]
生長並延緩 英文
grow and stay
  • 生 : Ⅰ動詞1 （生育; 生殖） give birth to; bear 2 （出生） be born 3 （生長） grow 4 （生存; 活） live;...
  • 長 : 長Ⅰ形容詞1 （年紀較大） older; elder; senior 2 （排行最大） eldest; oldest Ⅱ名詞（領導人） chief;...
  • 並 : 併名詞1. （山西太原的別稱） another name for taiyuan （in shanxi province）2. （姓氏） a surname
  • 緩 : Ⅰ形容詞1 （遲; 慢） slow; unhurried 2 （緩和; 不緊張） not tense; relaxed Ⅱ動詞1 （延緩; 推遲） d...
  • 生長 : grow; grow up; ascent; merisis; build up; auxesis; increment; overgrowth; gain; burgeon; bourgeon...
  1. The results showed that toxic m. aeruginosa delayed the growth and reproduction of the water fleas because the algae hindered reproduction of the water fleas

    試驗結果表明，有毒的微囊藻不僅明顯延緩大型?的生長，而且阻礙蟲體的懷卵和發育，並造成幼體產出困難、導致大型?死亡率升高。
  2. Furthermore, the growth and the study of self - organized quantum dots structures become more and more important recently, and the application of self - organization technique become wider and wider in this thesis, we address the theory of film growth and the growth technique firstly more, the ways and characteristics of surface detection are prescribed we mainly report the growth process, results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd, in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures, including the substrate cleaning, nitridation, the growth of buffer and the growth of gan and ain epilayer, is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover, we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature, we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )

    本論文主要論述了在espd - u裝置上，採用電子迴旋共振等離子體增強mocvd （ ecr - pamocvd ）方法，在藍寶石襯底上通過s - k模式自組裝生長gan aln量子點結構的生長工藝、結果及討論。而重點分析了自組裝生長量子點之前的aln外延層生長工藝，包括襯底清洗、氮化、緩沖層的生長和gan 、 aln外延層的生長；通過高能電子衍射、 x射線衍射和原子力顯微鏡測試，並且對這些測試結果進行了詳細的比較研究，得出了較優化的工藝條件，生長出了晶質較好、表面較平整的aln外延層；進而採用s - k模式自組裝生長了gan aln量子點結構。由於實驗裝置加熱爐溫度的限制，我們沒有能夠生長出原子級平滑的aln外延層表面，因而沒能夠生長出密度比較大和直徑比較小的量子點。
  3. Long term post - establishment monitoring of transplanted vegetation and mitigation planting, plus designation of these areas as country parks, with effective fire breaks, to ensure long - term survival of the vegetation

    把移植及作為緩解措施而種植之植被的管理期延長，並把該等地區列為郊野公園及加築隔火界，確保植物得以長遠生長
  4. By the essential control of the initial stage of - material growth, the high - quality crystal films can be obtained. by using mocvd technology, studies of some kinds of methods such as hydrogen - terminated, nitridation, plasma - assisted, growth of two stages and sputtering buffer layers have been conducted. by measuring of xrd, pl, sem and tem, and analysis of spectra of xrd, raman scatting, oa, and pl at different temperatures, we observed that the crystal quality has been improved markedly

    本文利用mocvd技術，採用各種對si襯底處理的方法，如氫終止法、氮化法、等離子體轟擊方法、兩步生長法、濺射緩沖層法等進行了試驗與研究，通過x射線衍射技術（ xrd ） 、光致發光技術（ pl ） 、掃描電子顯微術（ sem ） 、透射電子顯微術（ tem ）等檢測，並對其x射線衍射光譜、拉譜光譜、吸收光譜及不同溫度下的光致發光光譜分析，發現外延晶體的生長質量得到了明顯提高。
  5. Vitamin c can remission the symptom of cancer patien and lengthen life span, but the relationship of it and telomerase was not reported. cisplatin is widely administrated in cancer therapy, it is cell cycle non - specific agent and is combined with other drugs. the caov3 cells were cultured in medium containing different concentrations vitamin c and for different time

    研究發現，人體內必須的營養物質維生素c （ vc ）可降低抗腫瘤藥的毒副作用，並具有抗腫瘤的能力，給各類晚期癌癥患者大劑量注射vc ，具有顯著緩解腫瘤患者癥狀並延長壽命的作用，但目前對vc抗腫瘤作用機制還不清楚。
  6. Result : 1 ) dmem : f12 would enhance the proliferation of hpfl, especially present with a concentration of 20ng / ml eof ; pref feeder layer can defer the differentiation of hpfl in vitro, but collagen - vi and gelatin can not do

    研究結果： 1 ）含有egf的dmem ： fiz對于hpfl的體外增殖明顯優于其它培養液；在不同的培養基質中， pref飼養層優于明膠和膠原，可促進hpfl的生長，並能延緩hpfl在體外的分化。
  7. By means of quantitative analysis, we accessed growth rate and film thickness of gan epilayer, and even determined in real time the thickness of buffer layer from in situ measurements of normal incidence reflectance

    通過對在位監測曲線的分析，確定gan生長速率以及外延層的厚度，並利用監測曲線實時標定緩沖層的厚度。
  8. In this paper, the growth technology is presented for epitaxial silicon carbide films on sapphire with a buffer layer by atmospheric - pressure chemical vapor deposition ( apcvd ) process. the effect of temperature and precursors flow rates on the growth of silicon carbide films by chemical vapor deposition is analyzed. the structural properties of the films grown on sapphire compound substrate are studied by x - ray diffraction ( xrd ), x - ray photospectroscopy ( xps ) and photoluminescence spectroscopy

    本論文提出了在藍寶石上引入一層緩沖層材料形成復合襯底，採用常壓化學氣相淀積（ apcvd ）方法在其上異質外延生長sic薄膜的技術，分析了cvd法生長sic的物理化學過程，通過實驗提出sic薄膜生長的工藝條件，並通過x射線衍射（ xrd ） 、 x射線光電子能譜（ xps ） 、光致發光譜（ pl譜）和掃描電鏡（ sem ）對外延薄膜的結構性質進行分析。
  9. In this thesis, the cvd technique and “ two - step growth process ” were used to deposit the 3c - sic films, that was to carbonize si substrate in carbide gas atmosphere first in order to form a buffer layer, then deposited the 3c - sic films on this buffer layer

    本論文採用cvd方法，並結合「兩步生長工藝」進行3c - sic的異質外延生長。即:首先將si基片碳化，形成一個碳化緩沖層，然後再在此緩沖層上異質外延生長3c - sic薄膜。
  10. Abstract : in a network system, overflow or overwrite of message buffer will cause missing of messages. for a timed token network, message transmission time and the message buffering space allocation in a node are very important issues on network real time capability. this paper analyses the message buffering mechanism, describes the relationship of message buffering space and message transmission bandwidth allocation, and proposes a space determination method of message buffer for ltpb network. the maximum space redundancy avoiding buffer overflow for “ send ” and “ receive ” buffers has been derived. it is found that the space of “ send ” and “ receive ” buffers is equal to the message size under condition that the message gap time is greater than message latency and node response time

    文摘:在網路系統中，節點緩沖區內消息發生覆蓋或溢出會造成消息的丟失，對于限時令牌網路，節點消息發送時間和消息緩沖容量的分配是影響消息實時性的重要因素.針對令牌傳遞網路分析了節點消息緩沖機制，說明了消息緩沖容量的確定與網路帶寬分配方法的關系，並提出了消息緩沖容量的確定方法，導出了避免消息覆蓋或溢出所需的最大發送和接收緩沖容量余度.指出在消息的產生間隔大於該消息的最大允許的延遲時間和接收節點響應時間的條件下，發送和接收端的消息緩沖容量等於被緩沖消息的長度
  11. In a network system, overflow or overwrite of message buffer will cause missing of messages. for a timed token network, message transmission time and the message buffering space allocation in a node are very important issues on network real time capability. this paper analyses the message buffering mechanism, describes the relationship of message buffering space and message transmission bandwidth allocation, and proposes a space determination method of message buffer for ltpb network. the maximum space redundancy avoiding buffer overflow for “ send ” and “ receive ” buffers has been derived. it is found that the space of “ send ” and “ receive ” buffers is equal to the message size under condition that the message gap time is greater than message latency and node response time

    在網路系統中，節點緩沖區內消息發生覆蓋或溢出會造成消息的丟失，對于限時令牌網路，節點消息發送時間和消息緩沖容量的分配是影響消息實時性的重要因素.針對令牌傳遞網路分析了節點消息緩沖機制，說明了消息緩沖容量的確定與網路帶寬分配方法的關系，並提出了消息緩沖容量的確定方法，導出了避免消息覆蓋或溢出所需的最大發送和接收緩沖容量余度.指出在消息的產生間隔大於該消息的最大允許的延遲時間和接收節點響應時間的條件下，發送和接收端的消息緩沖容量等於被緩沖消息的長度
  12. The result indicated : the basic medium supplemented 15 % ~ 20 % nbs or fcs was much easier to culture mef and es cells in vitro

    血清濃度的適度增加可提高細胞的活力和生長速度，並可延緩細胞壽命。
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